D 1N4007 Search Results

n4007

Abstract: N4001 N4007GP 4005GP 1N4001GP 1N4007GP 4001GP N4007G OT31
Contextual Info: ÏM IC D N D U C T D R D isc re te PO W ER & S ig n a l Technologies tm 1N4001GP - 1N4007GP Features 1.0 m in • Low forward voltage drop. 25.4 • High surge current capability. D im en sio n s in inches (m m ) • High reliability. 0.205 0.160 (5.21)

p15j

Abstract: p10j D0-204AC 1N492GP GP20AG P1N5 P20J p10b GP30AG P10K
Contextual Info: QUICK GUIDE TO SUPERECTIFIERS •RQP02 TYPE GP02 -12E thru -20E CASE BA157GP* GL34A GP250 -20 thru -1 thru -4 -40 D 0204AL D 0204AL D 0204AL CASE G P06A GP10A 1N3611GP thru thru thru thru thru BY159GP GL34J ‘ RG L34J G P08J GP10M 1N3614GP 1N4007GP 1N4249GP *1N4937GP

4E20-28

Abstract: 4E20-8 4E20-M-3 4E30-M-3 4E50M-28 4E50 1N4007V AUO-002 4E303 4E20
Contextual Info: AMERICAN POIilER 073713S 5«iE D DEVICES 0DDDD7D DM7 • A P D / ^ c V - / J » 1N4001-1N4007 p o w e r d e v i c e s , inc. SEMICONDUCTORS 1A plastic silicon rectifiers MECHANICAL CHARACTERISTICS - .010 : 002 NOM DIA I'61 1.1 FEATURES • Low cost • High current capability

dkt4

Abstract: 102350 53-896 380VAC 25x18 25X14 33640 53896
Contextual Info: Term inal B lo c k s with C o m po n e n ts I 1 PS DK 4 D W D K 2.5 D DK 4 D W D K 2.5 D DK 4 D W D K 2.5 D D io d e s V D iod e term inal A rc s u p p re ss io n circu it for A rc s u p p re ss io n circu it for c o n ta c to rs a n d so le n o id c o n ta c to rs a n d so le n o id

Contextual Info: 1775470 C O D I IIII ~TQ f&IPitfj IB S E M IC O N D U C T O R dT IN C 90D 00593 D T — | 177S47Q DODOS^B t T | ~ CODI Semiconductor, Inc. Miniature Plastic Silicon Rectifiers 1N4001 thru 1N4007 VO LTAG E RANGE 50 to 1000 PRV CURRENT 1,0A at 75° FEATURES

diode 1n4007

Abstract: 1N4007 diodes 1n4007 FAH diode diode,1N4007 Diode -1N4007 1a 1000v 47146 I-26366 DIODE1N4007
Contextual Info: Diode Plugs D LS 2 DLS 2 for SAKR-D for SAKR-D WSD 2.5 WTR 2.5 D DQS 2 for 6mm-wide terminus mm SAKR-D SAKR-D WTR 2.5 D JB ^ with diode plug with test sockets m p Term, width +.2 assy. tol. mm Insulation stripping length mm C onnection data Screw connection, solid

ADC 12 aluminium

Abstract: 1N4007 dioda 1n4007
Contextual Info: 45 RD 0605 -D, RD 2001 -D, RD 3501 -D PrzekaŸniki pó³przewodnikowe przemys³owe, dla obci¹¿eñ sta³opr¹dowych DC, typu RD 0605 -D, RD 2001 -D, RD 3501 -D • przekaŸnik pó³przewodnikowy DC • pr¹d znamionowy 1 i 5 ADC • znamionowe napiêcie obci¹¿enia:

CHARACTERISTICS DIODE 1N4007

Abstract: 1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl DIODE 1N4001 characteristics l4007 "Power Diode" 1N4007 DIODE 1N4001 WORKING
Contextual Info: 1N4001/L–1N4007/L Vishay Lite–On Power Semiconductor 1.0A Rectifier Features D Diffused junction D High current capability and low forward A – 405 voltage drop D Surge overload rating to 30A peak D Low reverse leakage current D Plastic material – UL Recognition flammability

ln4001

Abstract: 1N4001-1N4007 IN4003 diode 1N4001 specifications 1N4007 diodes 1N4007 1N4001 IN4003 forward voltage diode 1n4001 diode in4003
Contextual Info: DIODES LIMITED 1N4001-1N4007 SERIES FAIRACRES ESTATE. DEDW O RTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency

1N4004 LITEON

Abstract: diode LT 1n4007 1n4003 diode 1N4007 marking CD 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006
Contextual Info: 1N4001G/L–1N4007G/L Vishay Lite–On Power Semiconductor 1.0A Glass Passivated Rectifier Features D Glass passivated die construction D Diffused junction D High current capability and low forward A – 405 voltage drop D Surge overload rating to 30A peak

4D4B44

Abstract: 4G4B44 4B4B44 4B4B41 1ZB36 U1Z36 S5188 S5500G 4J4B44 U1Z13
Contextual Info: D I S C O N T I N U E D T Y P E L IS T P art No. 0R06NXZ31 0R06YXZ31 0R5D4B42 1DZ6K1N5059 1GZ61 1N5060) 1JZ61 ( 1N5061 ) 1LE11 1LZ6K1N5Û62) 1N4001A 1N4002A 1N4003A 1N4004A 1N4005A 1N4006A 1N4006E 1N4007A 1NE11 1QE11 1S220 1S221 1S222 1S223 1S224 1S225

ITT 1N4007

Abstract: itt 1N4004 ITT 1N4005 ITT 1N4001 1N4007 details 1N4007 ITT 1N4002 itt itt 1n4003 ITT 1N4006 1N4001
Contextual Info: ITT SEN ICO N D/ IN TERH ETALL SDF n m J> m , 7 n 0002^ Ob*ì 1N4001 . 1N4007, EM513 M I S I T .o l^ Silicon Rectifiers Nominal current Repetitive peak reverse voltage 1A 100. 1600 V The type 1N4004 is also available according British Telecom Specification D 7206.

Contextual Info: UTEKZI 1N4001 thru 1N4007 SEMICONDUCTORS DO-41 FEATURES • L o w co st • D iffu s e d ju n c tio n • L o w leakage • L o w fo rw a rd vo lta g e d ro p • H igh c u rre n t c a p a b ility • • 1.0 25.4 M IN E a sily cleaned w ith F re o n , A lc o h o l, C h lo ro th e n e and

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )

1N4001G

Abstract: 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
Contextual Info: Datasheet 1N4001G THRU 1N4007G Central 1 .0 AMP REC TI F I ER GLASS P A SS IV A T E D CHIP 50 THRU 1000 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D O - C A S E Semiconductor Corp. Manufacturers of World Class Discrete Semiconductors

PT-100 temperature sensor

Abstract: Diode 1N4007 vh 801694 EW 35 End Bracket 80659 52640 1N4007 diode bridge
Contextual Info: Terminal Blocks with Components Diodes BS r i DK 4 D WDK 2.5 D DK 4 D WDK 2.5 D Diode terminal for lamp test Diode terminal for lamp test circuits, with series resistor circuits, with series resistor DK 4R C DK 4 PT 100 Arc suppression circuit PT 100 temperature sensor

555 7490 7447 7 segment LED display

Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

1k 275vac

Abstract: 275VAC 2.2UF STTH1R06A L6382 470n 400V 100nf 275VAC SMD ntc110 mosfet driver 400v 2.2uf 450V STP5NK60Z
Contextual Info: 5 4 3 2 1 F1 D12 4 1 + 1N4007 BRIDGE RB156 3 R37 8 - R3 750k 1 2 1 220k 2 R38 220k STTH1R06 1 T2 2 C3 NTC1 10 5 2 x 35mH Vcap D2 2.0mH 3 1 2 R2 1M 350V AC 2 D7 DC400V T1 1 L N PE 4 C1 220n 275VAC J1 3 R1 1M 350V FUSE R11 750k DC5V Vcap 470n 275VAC D D R6 C2

Contextual Info: TAIWAN LITON ELECTRONIC L I T E M : I 41E » S E M IC O N D U C T O R S • &&35h^B QQ04222 17T * T L I T 1N4001G thru 1N4007G -1 “ - 0 v - v 3 VO LTA G E RANGE 5 0 to 1000 Volts C U R R EN T 1.0 Ampere D O -4 1 FEATURES • Glass passivated chip • Low leakage

1N4007

Abstract: CF138 of D2 1N4007 PC817A C6 PC817 2.2uf 450V N67 TRANSFORMER AWG34 of 1n4007 STP4N150
Contextual Info: 5 4 3 2 1 D D 480-650VDC T1 NTC1 7 1mH 22uF/450V 1mH L4 C3 C4 10n-X2 10n-X2 230Vac D3 1N4007 2 1 27 mH C2 220u/35V R22 nc C16 22u/35V 1 2 R12 16R 1 2 3 C6 R14 1n 18k 4 INV VCC Q11 nc COMP VFF GD GND CS ZCD C13 C L6 U4 15uH 1N4148 8 1 6.8n - nc 7 D10 R13 2.2k - nc

1N4007L

Abstract: 1N4004L 1N4005L N4001 n4007 1N4001L 1N4002L 1N4003L 1N4006L flld
Contextual Info: LUCAS LEDEX/ LUCAS 81C filD D 00068 1A 5b07013 OOOODbñ b D - ' - S IL IC O N D IF F U S E D J U N C T IO N R E C T IF IE R S 5 0 -1 0 0 0 V PEAK R EV ER SE VO LTAGE 1N4001L1N4007L The 1 N 4 0 0 1 L -7 L series are ambient rated silicon diffused junction rectifiers having

d0401

Abstract: MR1000 MR400 mr800 1N4001 1N4007 MR050 MR100
Contextual Info: 1775470 C O D I II II T0 SEMICONDUCTOR INC d Ë T | i 775470 90D 00609 T -o - D /3 OOODbOT 0 | ~ CODI Semiconductor, Inc. M iniature Glass Passivated Junction Plastic Rectifier MR050 thru MR1000 V O LT A G E RANGE 50 to 1000 PRV CURRENT 1.0 Ampere FEATURES

VARISTOR S15

Abstract: W-Interconnections weidmuller relay free 1N4007 SRCI2CO
Contextual Info: Data Sheet • Electronics RIDERSERIES RCI 1 Change-over contact NEW R C I – T h e n e w s t a n d a rd f o r c o m p a c t i n d u s t r i a l re l a y s . D e s i g n e d w i t h t h e same dimensions as the well-known P C B re l a y s , t h e n e w i n d u s t r i a l re l a y