D 1879 TRANSISTOR Search Results

capicitor

Contextual Info: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride

d 1879 TRANSISTOR

Contextual Info: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride

Contextual Info: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)

SM 4151

Abstract: 2sc497
Contextual Info: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo

2sa1876

Contextual Info: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]

d 1879 TRANSISTOR

Abstract: transistor C 2240
Contextual Info: m æ* m RF Products m Microsemi 140 Commerce Drive M ontgom eryville, PA 18938-1013 Tel: 21S 631-3840 TCC2223-3 RF & MiCROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS -RE.QUENCY ¿ ,2 2.3GHz POWER OUT 3.0W POWER GAIN 8,5dB VOLTAGE 24.0V HERMETIC PACKAGE

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

transistor wu1

Abstract: NS-1186 spx 1404 UNO32 4 pin 433 mhz rf module TM 1628 driver display HD404868 HD404878 HD404889 HD404899
Contextual Info: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit ADE-202-075D O Rev. 5.0 Feb. 2000 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,

NS-1186

Abstract: HD404868 HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899 MX-38T Si3239
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TO-92variant

Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)

br a1273 transistor

Contextual Info: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit ADE-202-075C O Rev. 4.0 Dec. 1999 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,

Contextual Info: bb53T31 □D3ST00 bOb M A P X Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 N AflER PHILIPS/DISCRETE FEATURES b?E D PINNING PIN • Low cost • High power gain. DESCRIPTION Code: V30 1 base DESCRIPTION

TL172

Abstract: TL170
Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications

TL139

Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

TL139

Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Contextual Info: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications

HD404878

Abstract: HD404889 HD404899 HD4074869 HD4074889 HD4074899 HD404868 Nippon capacitors
Contextual Info: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit REJ03B0051-0600H Rev. 6.00 Sep.08.2003 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,

SGSP256

Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Contextual Info: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: CMOS Peripherals CDP1879, CDP1879C-1 CMOS Real-Time Clock IN T - Features • C P U in te rfa c e fo r use w ith g e n e ra l-p u rp o s e m ic ro p ro c e s s o rs • Tim e o f d a y /c a le n d a r ■ Reads se co n d s, m inu te s, h o u rs ■ Reads d a y o f m o n th a n d m o n th

2SC1871

Abstract: n 1895 1878 TRANSISTOR 2SA893
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Si3239

Abstract: 24-segment transistor wu1 HD404868 HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

power supply ic 1507

Abstract: tdso 1163 2199 MCU transistors ai 757 smd ED8A transistor wu1 HD404868 HD404878 HD404889 HD404899
Contextual Info: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit REJ03B0051-0600H Rev. 6.00 Sep.08.2003 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

d 1879 TRANSISTOR

Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS
Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and