D 1879 TRANSISTOR Search Results

capicitor

Contextual Info: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride

d 1879 TRANSISTOR

Contextual Info: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride

d 1879 TRANSISTOR

Abstract: transistor C 2240
Contextual Info: m æ* m RF Products m Microsemi 140 Commerce Drive M ontgom eryville, PA 18938-1013 Tel: 21S 631-3840 TCC2223-3 RF & MiCROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS -RE.QUENCY ¿ ,2 2.3GHz POWER OUT 3.0W POWER GAIN 8,5dB VOLTAGE 24.0V HERMETIC PACKAGE

transistor wu1

Abstract: NS-1186 spx 1404 UNO32 4 pin 433 mhz rf module TM 1628 driver display HD404868 HD404878 HD404889 HD404899
Contextual Info: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit ADE-202-075D O Rev. 5.0 Feb. 2000 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,

NS-1186

Abstract: HD404868 HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899 MX-38T Si3239
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: bb53T31 □D3ST00 bOb M A P X Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 N AflER PHILIPS/DISCRETE FEATURES b?E D PINNING PIN • Low cost • High power gain. DESCRIPTION Code: V30 1 base DESCRIPTION

2SC1871

Abstract: n 1895 1878 TRANSISTOR 2SA893
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

d 1879 TRANSISTOR

Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS
Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and

atc200b104kw50

Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages

NPN POWER TRANSISTOR 2SD1878

Abstract: transistor 2sD1880 D1879 sd1878
Contextual Info: SAXYO TRANSISTO RS FOR CRT DISPLAY VIDEO O U TPUT A P PLICATIONS Transistors for High~Definition Monitor TV Applications Transistors for Video Output Applications The use of new technology, FBET Fold-Back Electrode Transistor and MBIT (Multi-Base Island Transistor), that are

4502B

Abstract: M159 Equivalent Circuit with transistor 3-State Buffer 4502BE
Contextual Info: S G S-THOMSON G7C D I Co s /m o s IN T E G R A T ED CIRCUIT - - - - — - S o k v; v - 7929225 7=12^237 D D m ‘14 5 3 I -•— - — ji hcohcf ■ S G S SÉMI CÔNÔÛCf OR °CQftCH Q 8 9 5 9 ° « ' - T' b i / S TR O B E D H E X IN V E R T E R /B U F F E R

allegro 3 PIN hall effect sensor

Abstract: allegro HALL EFFECT SENSOR hall effect sensor 4 pin ic hall effect sensor 3pin circuit diagram of hall effect allegro hall active and passive electronic components difference hall sensor 4pin 4 pin hall throttle sensor active and passive electronic components
Contextual Info: Product Information Allegro Hall-Effect Sensor ICs By Shaun Milano Allegro MicroSystems, Inc. Allegro MicroSystems, Inc. is a world leader in developing, manufacturing, and marketing high-performance Halleffect sensor integrated circuits. This note provides a basic

N140 ALLEGRO

Abstract: HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E Allegro Hall-Effect ICs Ultrasonic welding generator GTS2000
Contextual Info: Application Note 27703.1B GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

vane air flow sensor

Abstract: alnico alnico 9
Contextual Info: APPLICATIONS INFORMATION THE HALL-EFFECT SENSOR The basic Hall sensor is simply a small sheet of sem iconductor m aterial. A constant voltage source forces a constant bias current to flow in the sem iconductor sheet. The output, a voltage m easured across the width of the sheet, reads near zero if a magnetic field is not

Hall sensors Siemens

Abstract: hall sensor siemens Siemens Hall K/tesla semiconductor Hall Hall Siemens
Contextual Info: SIEMENS 3.1 Hall-Effect Sensors Fundamentals The Hall effect, so named after its discoverer Edwin Hall in 1879, is the result of the Lorentz force on moving electrons subjected to a magnetic field. Fig. 1a is a representation of the current flow in a material when no magnetic field is present. As

Contextual Info: ES1879 AudioDr'we Solution Data Sheet ESS Technology, Inc. DESCRIPTION The ES1879 /WoDrive® solution is a mixed-signal single-chip solution that adds 16-bit stereo sound and FM music synthesis to notebook computers. It is compliant with the Microsoft® PC97 and PC98 specifications and WHQL audio

MIL-STD-2015

Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
Contextual Info: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low

BM20B-SHLDS-G-TFT

Contextual Info: LD- K20462-1 1. Application This technical literature applies to the color 81.6” TFT-LCD module LK816D3LA12. * These technical literature sheets are proprietary products of SHARP CORPORATION “SHARP” and include materials protected under copyright of SHARP. Do not reproduce or cause any third party to reproduce them in any

MAX6957

Contextual Info: 19-2438; Rev 4; 5/04 4-Wire-Interfaced, 2.5V to 5.5V, 20-Port and 28-Port I/O Expander The MAX7301 compact, serial-interfaced I/O expander or general-purpose I/O (GPIO peripheral) provides microprocessors with up to 28 ports. Each port is individually user configurable to either a logic input or logic

Contextual Info: 19-2438; Rev 6; 4/06 4-Wire-Interfaced, 2.5V to 5.5V, 20-Port and 28-Port I/O Expander The MAX7301 compact, serial-interfaced I/O expander or general-purpose I/O (GPIO peripheral) provides microprocessors with up to 28 ports. Each port is individually user configurable to either a logic input or logic

MAX7301ATL T

Contextual Info: 19-2438; Rev 6; 4/06 4-Wire-Interfaced, 2.5V to 5.5V, 20-Port and 28-Port I/O Expander The MAX7301 compact, serial-interfaced I/O expander or general-purpose I/O (GPIO peripheral) provides microprocessors with up to 28 ports. Each port is individually user configurable to either a logic input or logic