D 042 SILICON RECTIFIER DIODE Search Results

QD41

Abstract: BYX97-300
Contextual Info: BYX97 SERIES M A INTENANCE TYPE iILIPS INTERNATIONAL T> SbE I 7I10a5b DD41bSfi bll BIPHIN T -O l~ t RECTIFIER DIODES Also available to B S 9331-F130 Silicon rectifier diodes in metal envelopes similar to DO -5, intended fo r use in power rectifier applications.

Contextual Info: C4D20120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 33 A* Z-Rec Rectifier Qc Features • • • • • = 104 nC* Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

C4D10120

Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

Contextual Info: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

sk832

Abstract: SK821 SK841 SK993 SK3110 SK9975 SK952 SK9105 sk9154 SK9709
Contextual Info: THOnSON/ DISTRIBUTOR SñE D • T02t,ñ73 Q D O M T O 1! 3T4 ■ TCSK Diode Arrays Maxim um Ratings R epetitive Forw ard C urrent Peak Reverse TCE Type M a terial Voltage A verage Vr h m lo A V SK3110 SK7332 35 6000 Se Si Forw ard Voltage Reverse Outline D rop, DC

irf2807 equivalent

Contextual Info: T O -9.1662 International IG R Rectifier • • • • • PRELIMINARY IRFI2807 HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 75V F fo s o n = 0 . 0 1

0050II

Abstract: MO-15 72RD mosfet ir 840
Contextual Info: PD -91848B International Rectifier IHR IRLMS6802 HEXFET Power MOSFET • • • • Ultra Low On-Resistance P-Channel M O SFET Surface Mount Available in Tape & Reel dŒ V d s s = -2 0 V -Ds RDS on = 0.050ÎÎ T op V ie w Description These P-Channel MOSFETs from International Rectifier

2D 1002 diode

Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Contextual Info: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

Contextual Info: International Hü Rectifier P D - 9.1222 IRFI1310G H E XFE T Power M O S F E T Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS CD Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature

bc 331

Abstract: mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode
Contextual Info: P D -93759 International IOR Rectifier IRLMS4502 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface M ount A vailable in Tape & Reel V dss = -12V RüS on = 0.042Î2 Description These P-Channel MOSFETs from International Rectifier

IRLMS6803

Abstract: IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
Contextual Info: PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

IRLMS6803

Abstract: IRLMS1503 IRLMS1902 IRLMS5703 IRLMS6702 IRLMS6802 6x marking sot-23 p-channel
Contextual Info: PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D D 1 6 D 2 5 D G 3 4 S VDSS = -20V RDS on = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier

IRLMS6803

Abstract: EIA-541 IRLMS1503 IRLMS2002 mosfet 4502 5703 mosfet
Contextual Info: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

IRFz48N MOSFET

Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Contextual Info: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description

B1370

Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
Contextual Info: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

IRFIZ44N equivalent

Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

IRFIZ48N

Abstract: IRF1010 IRFI840G IRFZ48N
Contextual Info: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description

IRFz44n equivalent

Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N 12v input 55v output using irfz44n circuit IRFZ44 IRFIZ44N equivalent irfi840
Contextual Info: PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.024Ω G ID = 28A S Description

IRFz44n equivalent

Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
Contextual Info: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

SHARP IR3

Abstract: 1N5186 1N5187 1N5188 1N5190
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2007. INCH-POUND MIL-PRF-19500/424B 18 October 2006 SUPERSEDING MIL-S-19500/424A 29 May 1995 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,

IRFI840G

Abstract: IRFIZ46N IRFZ46N IRFZ46N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1306B IRFIZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω

marking 34A

Abstract: IRFI840G IRL3103 IRLI3103
Contextual Info: PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.014 Ω ID = 38A Description