D 042 SILICON RECTIFIER DIODE Search Results

Contextual Info: C4D20120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 33 A* Z-Rec Rectifier Qc Features • • • • • = 104 nC* Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

C4D10120

Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

Contextual Info: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

irf2807 equivalent

Contextual Info: T O -9.1662 International IG R Rectifier • • • • • PRELIMINARY IRFI2807 HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 75V F fo s o n = 0 . 0 1

0050II

Abstract: MO-15 72RD mosfet ir 840
Contextual Info: PD -91848B International Rectifier IHR IRLMS6802 HEXFET Power MOSFET • • • • Ultra Low On-Resistance P-Channel M O SFET Surface Mount Available in Tape & Reel dŒ V d s s = -2 0 V -Ds RDS on = 0.050ÎÎ T op V ie w Description These P-Channel MOSFETs from International Rectifier

2D 1002 diode

Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Contextual Info: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: International Hü Rectifier P D - 9.1222 IRFI1310G H E XFE T Power M O S F E T Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS CD Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature

IRFz48N MOSFET

Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Contextual Info: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description

IRFIZ44N equivalent

Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

IRFIZ48N

Abstract: IRF1010 IRFI840G IRFZ48N
Contextual Info: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description

IRFz44n equivalent

Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
Contextual Info: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

IRFI840G

Abstract: IRFIZ46N IRFZ46N IRFZ46N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1306B IRFIZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω

marking 34A

Abstract: IRFI840G IRL3103 IRLI3103
Contextual Info: PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.014 Ω ID = 38A Description

IRFI840G

Abstract: IRL3303 IRLI3303
Contextual Info: PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.026Ω ID = 25A Description

IRF1010

Abstract: IRFI1010N IRF1010N IRFI840G
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1010N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

IRF1010

Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

irf3205 DRIVER

Abstract: IRF3205 equivalent IRFI3205 IRF3205 IRFI840G b 1370
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1374 IRFI3205 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

IRF520N

Abstract: IRFI520N IRFI840G 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1362 IRFI520N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 100V

IRF110

Contextual Info: i International [^Rectifier PD 9.1373 IRFI101 ON PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 55V RDS on = 0.012Î2 lD = 44A

IRF540N

Abstract: IRFI540N IRFI840G 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1361 IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 100V

IRFIZ34N

Abstract: IRFI840G IRFZ34N for irfz34n
Contextual Info: PD - 9.1489B IRFIZ34N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier

IRFI840G

Abstract: IRFIZ34N IRFZ34N 65-A
Contextual Info: PD - 9.1489B IRFIZ34N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier

IRL2505

Abstract: IRL2505 equivalent IRFI840G IRLI2505 EQUIVALENT OF IRL2505
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLI2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm

IRFI840G

Abstract: IRL3303 IRLI3303
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V