CZTA14 Search Results

CZTA64

Abstract: CZTA14
Contextual Info: CZTA14 NPN CZTA64 PNP SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy

sot-223 code marking

Abstract: transistors sot-223 CZTA14 CZTA64
Contextual Info: Central CZTA14 NPN CZTA64 PNP TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

r2407

Contextual Info: Central CZTA14 NPN CZTA64 PNP Sem iconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

darlington complementary

Abstract: SILICON COMPLEMENTARY transistors darlington 743 ic COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS CZTA14 CZTA64
Contextual Info: C ZTA 14 C ZTA 64 Central NPN PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

ALL SILICON COMPLEMENTARY transistors darlington

Contextual Info: Central CZTA14 NPN CZTA64 PNP TM Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: CZTA14 CZTA64 Central NPN PNP sem iconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Darlington Transistors

Contextual Info: CZTA14 NPN CZTA64 PNP SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy

Contextual Info: Central CZTA14 NPN CZTA64 PNP TM Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: CZTA14 NPN CZTA64 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy

TRANSISTOR MARKING 707

Contextual Info: Central" CZTA14 NPN CZTA64 PNP Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epi­ taxial planar process, epoxy molded in a surface

Darlington Transistors

Contextual Info: Central CZTA14 NPN CZTA64 PNP TM Semiconductor Corp. SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA14, CZTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a

MPSA13

Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
Contextual Info: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

MPSA14

Abstract: equivalent mpsa14 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14 CZTA14
Contextual Info: PROCESS CP307 Small Signal Transistors NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization

6CW 62

Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 10BQ015 CMSH1-20ML CMR1U-02M CMSH1-40M EM 66 10MF2 10MQ040 EM EM 63 66 10MQ060 CMSH1-60M EM 66 1N6478 1N6479 CMR1-02M CMR1-02M EM EM 61 Code Selection Guide Industry Part Number Data Sheet 292

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes

TRANSISTOR NPN BA RV SOT - 89

Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes

Schottky Diode SOT-89

Abstract: MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK
Contextual Info: Competitive Part List Central Semiconductor Corp. 1. SOT-89 / SOT-223 Small Signal Transistors Our primary competition on the following devices is Philips, Siemens and Motorola. Competitor P/N BC868 BC869 BCP28 BCP29 BCP51, -10, -16 BCP52, -10, -16 BCP53, -10, -16

MPSA14

Abstract: MPSA13 "Darlington Transistor" Darlington transistor MPSa14 equivalent NPN Silicon Epitaxial Planar Transistor 2N6426 2N6427 CMPT6427 CMPTA13
Contextual Info: PROCESS CP327V Small Signal Transistor NPN- Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 23 x 23 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.7 x 4.7 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization

CP307

Abstract: 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14
Contextual Info: PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

ams 1117 3.3 volt smd regulator ic

Abstract: smd diode 1336 s37 smd transistor REGULATOR IC V17 telephone IC panasonic dsp AMS 1117 transistor pnp transistor 313 smd isolation transformer v.90 ECEA1HU CL-MD1724T11VC-A
Contextual Info: CL-M D562X/M D342X — CIRRUS LOGIC• Preliminary Data Book FEATURES • Complete PC telephony solution — Up to 56-kbps receive data rates CL-MD562X only — Highly integrated two- or three-chip set — Host-based controller — PCI (Peripheral Component Interconnect) 2.1-compliant

1N4937 SMD

Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Contextual Info: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series