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    CP327V Search Results

    CP327V Datasheets (7)

    Central Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CP327V-2N5308-CT
    		Central Semiconductor POWER TRANSISTOR NPN DIE Original PDF 559.13KB
    CP327V-2N5308-WN
    		Central Semiconductor POWER TRANSISTOR NPN DIE Original PDF 559.13KB
    CP327V-CZTA27-CT
    		Central Semiconductor POWER TRANSISTOR NPN DIE Original PDF 467.01KB
    CP327V-MPSA13-CT
    		Central Semiconductor POWER TRANSISTOR NPN DIE Original PDF 590.23KB
    CP327V-MPSA13-WN
    		Central Semiconductor POWER TRANSISTOR NPN DIE Original PDF 590.23KB
    CP327V-MPSA27-CT
    		Central Semiconductor POWER TRANSISTOR NPN DIE Original PDF 590.21KB
    CP327V-MPSA27-WN
    		Central Semiconductor POWER TRANSISTOR NPN DIE Original PDF 590.21KB
    SF Impression Pixel

    CP327V Price and Stock

    Siemens

    Siemens HCP327VT

    Siemens HCP SW DISCONN VRT 240V 800A T-FUSE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HCP327VT
    • 1 $19776.02
    • 10 $19776.02
    • 100 $19776.02
    • 1000 $19776.02
    • 10000 $19776.02
    		Get Quote
    RS HCP327VT Bulk 1
    • 1 $31804.00
    • 10 $31804.00
    • 100 $31804.00
    • 1000 $31804.00
    • 10000 $31804.00
    		Get Quote

    CP327V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    "Darlington Transistor"

    Abstract: CMLT6427E CMST6427E
    Contextual Info: PROCESS CP327V Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 23 x 23 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.7 x 4.7 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization


    Original     		cp327vcmlt6427ecmst6427edarlington transistor PDF

    MPSA14

    Abstract: MPSA13 "Darlington Transistor" Darlington transistor MPSa14 equivalent NPN Silicon Epitaxial Planar Transistor 2N6426 2N6427 CMPT6427 CMPTA13
    Contextual Info: PROCESS CP327V Small Signal Transistor NPN- Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 23 x 23 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.7 x 4.7 MILS Emitter Bonding Pad Area 4.7 x 4.7 MILS Top Side Metalization


    Original     		cp327v2n64262n6427cmpt6427+9cmpta13cmpta14cxta14czta14mpsa13mpsa14darlington transistormpsa14 equivalentnpn silicon epitaxial planar transistor PDF