CZT1 Search Results

transistor darlington npn

Abstract: DARLINGTON 30A 100V npn CZT122 CZT127 power darlington npn transistor
Contextual Info: Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed

Contextual Info: Central swiHconductor Corp. CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

CJD3055

Abstract: CZT3055 darlington
Contextual Info: Power Transistore POWER 223 SOT-223 Case A Pow er Transistor C hip in a Sm all Signal Package! DESCRIPTION TYPE NO. NPN CZT31C PNP CZT32C CZT122 CZT127 CZT2955 CZT3055 CZT5338 'c P0 bwc b o BVc e o A MAX (W) (V) MIN (V) MIN MIN MAX AMPL7SWITCH 3.0 2.0 100

czt1

Contextual Info: IC SMD Type Product specification KZT122 CZT122 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector

CZT122

Abstract: CZT127 darlington transistor sot223 5A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR NPN 1 FEATURES z Complementary to CZT127 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE

Contextual Info: CZT122 NPN CZT127 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package

CZT122

Abstract: CZT127 pd 223
Contextual Info: Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed

Contextual Info: Centrar CZT122 NPN CZT127 PNP Semiconductor Corp. POWER DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.

darlington transistor power

Abstract: IC ne ic30a
Contextual Info: NE Central W CZT122 NPN CZT127 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR POWER TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR PNP FEATURES z Complementary to CZT122 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE 2. COLLECTOR

CZT122

Abstract: CZT127
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR PNP FEATURES 1 z Complementary to CZT122 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE

Contextual Info: IC SMD Type Product specification KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector

SILICON COMPLEMENTARY transistors darlington

Abstract: CZT122 CZT127
Contextual Info: C Z T122 C ZT127 Central" NPN PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

darlington transistor sot223 5A

Contextual Info: CZT122 SOT-223 Transistor NPN 1. BASE 1 SOT-223 2. COLLECTOR 3. EMITTER Features — Complementary to CZT127 — Silicon Power Darlington Transistors — Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

ja smd

Abstract: CZT127 KZT127
Contextual Info: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2

Contextual Info: # CZT122 CZT127 Central" NPN PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

Darlington 30A

Abstract: DARLINGTON 30A 100V npn CZT122 CZT127 300 W npn darlington power transistors
Contextual Info: CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package

smd npn darlington

Abstract: CZT122 KZT122
Contextual Info: Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 CZT122 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR NPN FEATURES z Complementary to CZT127 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE 2. COLLECTOR

Contextual Info: CZT127 SOT-223 Transistor PNP 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features — Complementary to CZT122 — Silicon Power Darlington Transistors — Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

"Darlington Transistor"

Abstract: CJD127 CP630 CZT127
Contextual Info: PROCESS CP630 Power Transistor PNP - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Å

MPC8313C

Abstract: 516-ball POWERPC 8548 MMU mpc8270cxxmiba The PowerPC 620 ISA MPC180LMB MPC823 MPC823E MPC850 MPC755CT
Contextual Info: Network/Embedded Processors Quarter 4, 2007 SG1007Q42007 Rev 0 SECURITY AND INTEGRATED COMMUNICATIONS PROCESSORS Security Processors Description Packaging Speed MHz Rev Voltage Core (V) Voltage IO/tol (V) Status MPC180LMB Product Security co-processor which interfaces gluelessly to 8xx system bus and 8260 local bus.

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A