CZL A6 Search Results

MH4M32ANXJ

Abstract: 464W aatj CZL a6
Contextual Info: MITSUBISHI LS Is <DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4M X 32 I £ O M: 128 BIT Max. Access T ype name Load m em ory tim e O u tw a rd d im e n sio n s Data sheet W X H X D m m ) page (ns) MH4M32AATJ-6 ★ 60 MH4M32AATJ-7 ★ 70 MH4M32AXJ-6 ★ M H4M32ANXJ-6

A1719

Abstract: 1m x 8 sram
Contextual Info: "7 05*5 5 ^ . 1M x 8 SRAM DIL MODULE S Y iita q SYS81000FKX-55/70/85/10/12 limited 1,048,576 x 8 CMOS Static RAM Module Issue 2.0 : August 1994 Description j Features ] Access Times of 55/70/85/100/120 ns. 36 Pin JEDEC standard Dual-ln-Line package. The SYS81000FKX is a plastic 8M Static RAM

A18 sot

Abstract: sot-89 Marking GK rtb4 marking sot223 GY RT9161-33CX A9 sot223 AMP marking c7 sot-89 RT9161-18CX RT9161-26CV RT9161-33CV
Contextual Info: RT9161/A 300/500mA Low Dropout Linear Voltage Regulator General Description Features The RT9161/A is a 300/500mA fixed output voltage z Low Dropout Voltage of 200mV at Output low dropout linear regulator. Typical ground current Current 100mA, 450mV at Output Current

HY57V164010B

Abstract: HY57V164010BTC-10 HY57V164010
Contextual Info: - H Y U H O f l l - , H Y 57V 164010B 2 B anks x 2 M x 4 B it S ynchronou s DRAM DESCRIPTION The Hyundai HY57V164010B is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V164010B is organized as 2banks of

Contextual Info: THI S DRAWING IS UNPUBLISHED. COP YR I G H T 2011 RELEASED FOR PUBLI CATI ON ALL RIGHTS REVISIONS RESERVED. LTR DESCRIPTION DATE DWN APVD [10 R e l e a s e d as per CCR-10-0 05249 10MAR2 0 10 DMK RRP E11 NEW P /N 9 - 1 9 55 5 0 6 -2 AND 0 - 1 9 55 5 0 7 -4 ADDED

Contextual Info: Preliminary CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max.

Contextual Info: CAT28C65B 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: - 120/150/200ns ■ Commercial, Industrial and Automotive Tern perature Ranges ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 100 fiA Max. ■ Automatic Page Write Operation:

SPR128

Abstract: narrator sp0256 SP0264 DSR 505 MC1316 sp0256b Microchip Speech 35D8 SP025
Contextual Info: SP0264 M icrochip NARRATOR SPEECH PROCESSOR FEATURES DESCRIPTION • Natural speech • On-chlp 64K bit ROM • Stand alone operation with Inexpensive support components • Wide operating voltage • Word, phrase or sentence library, ROM expandable • Directly expandable to a total of 480K ROM

a10157

Abstract: CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10
Contextual Info: S G S -T H O M S O N ^ 7 /» M 28LV17 M [ M S E [ L I ç n ïïM 5 [ iïïD ( S § LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA

CZL - A8

Contextual Info: M IT S U B IS H I LSlS MH25632XJ-7,-8/ MH25632SXJ-7.-8 FAST PAGE MODE 8388608-BIT 262144-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION M H 2 5 6 3 2 X J /S X J is 2 6 2 1 4 4 -word by 3 2 -b it dynamic RAM •nodule. This consists of two industry standard 256K x 16bit

Contextual Info: X X28HC256 256K p r 32K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V p p Control

Contextual Info: TOSHIBA TC58V32AFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32 device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.

Contextual Info: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and

A22-A13

Contextual Info: TOSHIBA TC58V64FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V64 device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 1024 blocks.

SmartMedia Logical Format

Abstract: TH58V128DC
Contextual Info: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and

TH58V128FT

Abstract: TH58
Contextual Info: TOSHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPR O M ) organized as 528 bytes X 32 pages X 1024 blocks.

TC58V64DC

Abstract: SmartMedia Logical Format SmartMedia Logical Format ID maker code
Contextual Info: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and

Contextual Info: Lattice is ;Semiconductor I Corporation L S I3 1 6 0 High Density Programmable Logic Features • HIGH-DENSITY PROGRAMMABLE LOGIC — 160 I/O Pins — 7000 PLD Gates — 320 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State

A6W 76

Abstract: 99LSB
Contextual Info: JULY 3,1996 TEST REPORT #96032 QUALIFICATION TESTING PART NUMBER TSM-125-Ol-F-DV CLH-125-L-D-DV CERTIFICATION This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Samtec Corporation

MR 4710 IC

Abstract: KL SN 102 lcd MR 4710 ks 4290 317 jrc SAA 1350 LM 1405 1470 LM jrc 317 IC JRC 2910
Contextual Info: NJU6679 128 = J ^ E > x If V •m b "? 1 3 2 - iz ^ 'y 3? L C D æ > h /< ■ n NJU6679 i t . 128^> x 132-ttf* m ? h7?7’ LCDT 7 ^ * t t 0 COLCDh* 7ÏA* lis 25, 344tf îih 7 Â^f* -$RAM. CPU<i>*-7i<iJl[I&, i'A - V i i t f f P T ? 1 8 j £ £ f r W ifrj/W

10 HP CAPACITOR START SINGLE PHASE motor WIRING DIAGRAM

Abstract: 50387-001 1 HP SINGLE PHASE induction motor wiring diagram klixon start relay motor transistor 431A Allen-Bradley 1388 KLIXON Thermal Overload Relay B7 3 hp 1500 rpm a.c. induction motor winding data TRANSISTOR 1FU ac induction motor direct torque control using fu
Contextual Info: ALLEN-BRADLEY A R D C K W E L L IN T E R N A T IO N A L C O M P A N Y Instruction Manual Bulletin 1334 15 thru 50 HP 575V Adjustable Frequency A C Motor Drives P rice: $2 Important User Information Because of the variety of uses for this equipm ent and because of the

buzzer obo

Abstract: HD4074719H PKW-3100 R90-R93 441L204
Contextual Info: H D 4 0 4 7 1 0 S e rie s Description The HD404710 Series 4-bit single-chip microcom­ puters incorporate five timers, two serial interfaces, an A/D converter, an input capture timer, and an output compare timer. They also include a 32.768kH z oscillator and low-power dissipation modes.

Contextual Info: Preliminary Data Sheet July 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T