CYPRESS AN1064 SRAM SYSTEM GUIDELINES Search Results

cypress AN1064 sram system guidelines

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages.

cypress AN1064 sram system guidelines

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64 K × 4 bits that supports an asynchronous memory interface. The device features an automatic

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs

Contextual Info: CY7C194BN 256 Kb 64K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages.

cypress AN1064 sram system guidelines

Abstract: CY7C1059 AN1064 CY7C1059DV33 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXQ
Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. To write to the device,

CY7C1071DV33

Abstract: AN1064
Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM Features • High speed ❐ tAA = 12 ns Low active power ❐ ICC = 250 mA at 12 ns ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power ❐ ISB2 = 50 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention

CY7C1071DV33

Abstract: DSA0016916 CY7C1071DV33-12BAX
Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM 32-Mbit (2 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 12 ns ■ Low active power ❐ ICC = 250 mA at 12 ns ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power ❐ ISB2 = 50 mA

CY7C1071DV33

Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM 32-Mbit (2 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 12 ns ■ Low active power ❐ ICC = 250 mA at 83.3 MHz ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power

AN1064

Abstract: CY7C1059DV33 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXQ Cypress AN-1064
Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. To write to the device,

AN1064

Abstract: CY7C1059DV33 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXI CY7C1059DV33-12ZSXQ
Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. To write to the device,

cypress AN1064 sram system guidelines

Abstract: AN1064 CY7C1059DV33 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXI CY7C1059DV33-12ZSXQ
Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. To write to the device,

AN1064

Abstract: CY7C1059DV33 CY7C1059DV33-10ZSXI CY7C1059DV33-12ZSXI
Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 110 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 20 mA The CY7C1059DV33[1] is a high performance CMOS Static RAM organized as 1M words by 8 bits. Easy memory expansion is

AN1064

Abstract: CY7C1010CV33 CY7C1010DV33 CY7C1010DV33-10VXI CY7C1010DV33-10ZSXI
Contextual Info: CY7C1010DV33 2-Mbit 256K x 8 Static RAM Features Functional Description • Pin and function compatible with CY7C1010CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 10 mA The CY7C1010DV33 is a high performance CMOS Static RAM

Contextual Info: CY7C1059DV33 8-Mbit 1M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 110 mA at f = 100 MHz ■ Low CMOS standby power ❐ ISB2 = 20 mA The CY7C1059DV33 is a high performance CMOS Static RAM

AN1064

Abstract: CY62167E
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

AN1064

Abstract: CY62167E 1M x 16 SRAM
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

AN1064

Abstract: CY6264 CY6264-55SNXI CY6264-70SNXC
Contextual Info: CY6264 8 K x 8 Static RAM Features Functional Description • Temperature ranges: ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ 55 ns ■ CMOS for optimum speed/power The CY6264 is a high-performance CMOS static RAM

cy14e256la-sz45xi

Abstract: cy14e256lasz25xi
Contextual Info: CY14E256LA 256 Kbit 32K x 8 nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 32K x 8 (CY14E256LA) ■ Hands off Automatic STORE on Power Down with only a Small Capacitor ■ STORE to QuantumTrap Nonvolatile Elements Initiated by

CY7C1071DV33-12BAX

Contextual Info: CY7C1071DV33 32-Mbit 2M x 16 Static RAM Features • High speed ❐ tAA = 12 ns Low active power ❐ ICC = 250 mA at 12 ns ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power ❐ ISB2 = 50 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention

Contextual Info: CY7C199D Automotive 256 K 32 K x 8 Static RAM 256 K (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-E: –40 °C to 125 °C ■ Operating voltage VCC = 5 V ■ Pin and function compatible with CY7C199C ■ High speed

Contextual Info: CY7C1049CV33 Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Automotive -A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1049CV33 Automotive is a high performance CMOS

Contextual Info: CY7C1010DV33 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Pin and function compatible with CY7C1010CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 90 mA at 10 ns ■ Low CMOS standby power

Contextual Info: CY7C1010DV33 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Pin and function compatible with CY7C1010CV33 The CY7C1010DV33 is a high performance CMOS Static RAM organized as 256 K words by 8 bits. Easy memory expansion is