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Contextual Info: CY7C1317BV18 CY7C1319BV18 CY7C1321BV18 PRELIMINARY 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM
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cy7c1317bv18cy7c1319bv18cy7c1321bv1818-mbit+4300-mhz600mhzcy7c1917bv18bb165e
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CY7C1317BV18
Abstract: CY7C1319BV18 CY7C1321BV18 CY7C1917BV18
Contextual Info: CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM
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cy7c1317bv18cy7c1917bv18cy7c1319bv18cy7c1321bv18+118-mbit
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FBGA PACKAGE thermal resistance
Abstract: CY7C1317BV18 CY7C1319BV18 CY7C1321BV18 CY7C1917BV18
Contextual Info: CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 PRELIMINARY 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 • 250-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency
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cy7c1317bv18cy7c1917bv18cy7c1319bv18cy7c1321bv18+318-mbit250-mhzfbga package thermal resistance
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CY7C1317BV18
Abstract: CY7C1319BV18 CY7C1321BV18 CY7C1917BV18
Contextual Info: CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 PRELIMINARY 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM
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cy7c1317bv18cy7c1917bv18cy7c1319bv18cy7c1321bv18+118-mbit
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CY7C1317BV18
Abstract: CY7C1319BV18 CY7C1321BV18 CY7C1917BV18
Contextual Info: CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 PRELIMINARY 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM
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cy7c1317bv18cy7c1917bv18cy7c1319bv18cy7c1321bv18+118-mbit
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CY7C1317BV18
Abstract: CY7C1319BV18 CY7C1321BV18 CY7C1917BV18
Contextual Info: CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 The CY7C1317BV18, CY7C1917BV18, CY7C1319BV18, and CY7C1321BV18 are 1.8V Synchronous Pipelined SRAM
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cy7c1317bv18cy7c1917bv18cy7c1319bv18cy7c1321bv18+118-mbit
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Xilinx spartan xc3s400_ft256
Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
Contextual Info: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,
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ug086dqs10dqs11dqs12+15dqs13dqs14dqs15dqs16dqs17xilinx spartan xc3s400_ft256xc3s400_ft256xc3s400pq208xc3s250epq208xc3s400tq144xc3s400ft256xc3s1400afg676xc3s700afg484xc3s500epq208xc3s200ft256
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CY7C1338-100AXC
Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
Contextual Info: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12
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cy7c1019bv33-15vcgs71108aj-12cy7c1019bv33-15vxcgs71108agj-12+16cy7c1019bv33-15zcgs71108atp-12cy7c1019bv33-15zxcgs71108agp-12cy7c1019cv33-10vcgs71108aj-10cy7c1338-100axcgvt7164d32q-6cy7c1049bv33-12vxccy7c1363c-133accy7c1021dv33-12zxccy7c1460av25-200axccy7c1338g-100accy7c1041v33-12zxccy7c1460v33-200axccy7c1021dv33-10zxc
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