CY62167 Search Results

AN1064

Abstract: CY62167E 1M x 16 SRAM
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

55BV

Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is

CY62167DV18L-55

Abstract: CY62167DV18LL-55 CY62167DV18
Contextual Info: CY62167DV18 MoBL2 PRELIMINARY 16M 1024K x 16 Static RAM Features • Very high speed: 55 ns and 70 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 15 mA @ f = fMAX

CY62167DV30L-55ZI

Abstract: CY62167DV30
Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed

Contextual Info: CY62167DV18 MoBL2 PRELIMINARY 16M 1024K x 16 Static RAM Features • Very high speed: 55 ns and 70 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 15 mA @ f = fMAX

Contextual Info: CY62167EV18 MoBL PRELIMINARY 16-Mb 1M x 16 Static RAM Features input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Deselected (CE1HIGH or CE2 LOW) • Wide voltage range: 1.65V – 2.25V • Outputs are disabled (OE HIGH)

Contextual Info: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the

48TSOPI

Contextual Info: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

Contextual Info: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C

AN1064

Abstract: CY62167EV30 CY62167EV30LL
Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

Contextual Info: CY62167DV30 MoBL 16-Mbit 1 M x 16 Static RAM Features • Thin small outline package (TSOP-I) configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Wide voltage range: 2.2 V – 3.6 V ■ Ultra-low active power: Typical active current: 2 mA at f = 1 MHz ■

CY62167EV30LL-45ZXI

Abstract: AN1064 CY62167EV30
Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V

CY62167DV20

Abstract: CY62167DV20L CY62167DV20LL
Contextual Info: CY62167DV20 MoBL2 16-Mb 1024K x 16 Static RAM Features toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through

CY62167DV18

Abstract: CY62167DV18LL-55BVXI
Contextual Info: CY62167DV18 MoBL 16-Mbit 1M x 16 Static RAM Features consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE1 HIGH or CE2 LOW)

Contextual Info: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM 16 Mbit (1M x 16) Static RAM Features automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or

Contextual Info: CY62167EV30 MoBL PRELIMINARY 16-Mb 1M x 16 / 2M x 8 Static RAM (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into

CY62167DV30L-55ZI

Abstract: CY62167DV30
Contextual Info: CY62167DV30 MoBL 16-Mb 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed

Contextual Info: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C

Contextual Info: CY62167DV30 MoBL PRELIMINARY 16M 1024K x 16 Static RAM Features • Very high speed: 55 ns and 70 ns • Wide voltage range: 2.2V to 3.6V • Ultra-low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 15 mA @ f = fMAX

Contextual Info: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA

Contextual Info: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C

CY62167EV30LL-45ZXI

Abstract: AN1064 CY62167EV30 CY62167EV30LL
Contextual Info: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA

Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance

CY62167DV30LL-70ZXI

Abstract: 2057-01 Z48A BV48
Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are