CY62138FV30LL Search Results

Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

cy62138

Abstract: CY62138FV30 CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI
Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

1024KX8

Abstract: CY62138FV30LL-45ZXI
Contextual Info: CY62138FV30 MoBL PRELIMINARY 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138FV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

CY62138FV30

Abstract: CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI 90-nm
Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

CY62148E

Abstract: R1LP0108ESA-7SR
Contextual Info: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.

Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138FV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features

Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62138FV30LL-45BVXI

Abstract: CY62138FV30 CY62138FV30LL CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI
Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM

CY62138FV30LL-45ZSXI

Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM

Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62138FV30

Abstract: CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI
Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description • Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ■ Wide Voltage Range: 2.20V to 3.60V ■ Pin Compatible with CY62138CV25/30/33

Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Functional Description[1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM