CY62126 Search Results

AN1064

Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE
Contextual Info: MoBL ,CY62126EV30 1-Mbit 64K x 16 Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits[1]. This device features advanced circuit design to provide ultra low active current. This

CY62126DV30L

Abstract: CY62126DV30LL CY62126BV CY62126DV30 CY62126DV30LL-55ZXI
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

BV48A

Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not

Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly

CY62126BV

Abstract: CY62126DV30 CY62126DV30L
Contextual Info: 26DV30 ADVANCE INFORMATION CY62126DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when

CY62126BV

Abstract: CY62126DV30 CY62126DV30L
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C

Contextual Info: CY62126DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX

Contextual Info: CY62126ESL MoBL 1-Mbit 64K x 16 Static RAM Features automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

AN1384

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

A6 transistor mini

Abstract: CY62126VLL-55BAC CY62126V TSOP II 54
Contextual Info: PRELIMINARY CY62126V 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns — 198 mW (max.) (55 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected

CY62127V

Contextual Info: fax id: 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (A0 through A 15). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0 -|g) is written into the location speci­

AN1064

Abstract: CY62126DV30 CY62126EV30
Contextual Info: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Features • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive: –40 °C to +125 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62126DV30 ■

CY62126BV

Contextual Info: CY62126BV 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 54 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected

Ablebond 84-1LMI

Abstract: 84-1LMI JESD22 0/7C62126/7V
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97506, VERSION 1.0 May, 1998 1 Meg SRAM, R42 Technology, Fab 4 Qualification CY62126/7V 64K x 16 Static RAM, 2.7V - 3.6V Operation Cypress Semiconductor 1 Meg SRAM, R42 Technology, Fab 4 Devices:CY62126/7V Rev. A

CY62126BV

Abstract: CY62126DV30 CY62126DV30L CY62126DV30LL
Contextual Info: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not

CY62126BV

Contextual Info: 26BV CY62126BV 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 54 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected

Contextual Info: CY62126ESL MoBL Automotive 1-Mbit 64K x 16 Static RAM Features automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and

Contextual Info: CY62126ESL MoBL Automotive 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the

TSOP 48 thermal resistance junction to case

Contextual Info: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • High speed: 45 ns • Wide voltage range: 2.2V–3.6V • Pin-compatible with CY62126DV30 • Ultra-low standby power — Typical standby current: 1 µA — Maximum standby current: 4 µA

AN1064

Abstract: CY62126ESL-45ZSXI
Contextual Info: CY62126ESL MoBL 1-Mbit 64K x 16 Static RAM Features consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance

Contextual Info: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (I/O0