CXY13E Search Results

CXY13E Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CXY13E	Mullard	Microwave Semiconductors 1970	Scan	PDF	37.44KB	2
CXY13E	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF	49.08KB	1
CXY13E	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF	67.04KB	1
CXY13E09	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	152.94KB	1
CXY13E09J2	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF	49.08KB	1
CXY13E10	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	152.94KB	1
CXY13E104	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF	49.08KB	1
CXY13E11	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	152.94KB	1
CXY13E114	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF	49.08KB	1

CXY13E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10GHz oscillator Abstract: CXY13D CXY13E gunn effect Contextual Info: GUNN EFFECT DEVICES CXYI3D CXYI3E TENTATIVE DATA Gallium arsenide bulk effect devices employing the Gunn effect to produce CW oscillations at microwave frequencies. Each device is encapsulated in a varactor type pill package suitable for mounting in various types of	OCR Scan	CXY13D CXY13E IB8665I 10GHz. CXY13D-Page 10GHz oscillator gunn effect	PDF
APY12 Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP	OCR Scan	Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367	PDF

Catalog Datasheet

Type

Document Tags

PDF

10GHz oscillator

Abstract: CXY13D CXY13E gunn effect
Contextual Info: GUNN EFFECT DEVICES CXYI3D CXYI3E TENTATIVE DATA Gallium arsenide bulk effect devices employing the Gunn effect to produce CW oscillations at microwave frequencies. Each device is encapsulated in a varactor type pill package suitable for mounting in various types of

OCR Scan

CXY13D CXY13E IB8665I 10GHz. CXY13D-Page 10GHz oscillator gunn effect

PDF

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

OCR Scan

Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

PDF