CUS1 Search Results

Contextual Info: CUS10F30 Schottky Barrier Diode Silicon Epitaxial CUS10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.43 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

Contextual Info: CUS10F30 Schottky Barrier Diode Silicon Epitaxial CUS10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.43 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

Contextual Info: CUS10F30 ショットキバリアダイオード シリコンエピタキシャル形 CUS10F30 1. 用途 • 高速スイッチング用 2. 特長 1 順電圧が小さい。: VF(3) = 0.43 V (標準) (2) 汎用USCパッケージ。SOD-323とSC-76相当。

Contextual Info: CUS15I30A 東芝ショットキバリアダイオード CUS15I30A ○ スイッチング電源の 2 次側整流用 ○ 携帯機器のバッテリ逆流防止用 単位: mm 1.25 +− 0.2 0.1 : VFM = 0.46 V 最大 @IFM = 1.5 A 平均順電流 : IF (AV) = 1.5 A

CUS10I30A

Contextual Info: CUS10I30A 東芝ショットキバリアダイオード CUS10I30A ○ スイッチング電源の 2 次側整流用 ○ 携帯機器のバッテリ逆流防止用 単位: mm 1.25 +− 0.2 0.1 0.13 −+ 0.05 0.03 0.88 ± 0.1 ピーク順電圧 : VFM = 0.39 V 最大 @ IFM = 0.7 A

Contextual Info: CUS15S40 Schottky Barrier Diode Silicon Epitaxial CUS15S40 1. Applications • High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(2) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode USC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Contextual Info: CUS10I40A Schottky Barrier Diode CUS10I40A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max) @IFM = 0.7 A (2) Average forward current: IF(AV) = 1 A

Calex

Contextual Info: C/ILEX 15 TO 25 WATT AC-DC SWITCHING MODE AC-DC MODULE C U S I001200 SERIES SINGLE & DUAL OUTPUTS OUTPUT SPECIFICATIONS Voltage Accuracy. +2.0% max. Temperature Coefficient CUS100 Se rie s. ±0.03%/ C

CUS15I30A

Contextual Info: CUS15I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS15I30A Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm 1.25 +− 0.2 0.1 0.13 +− 0.05 0.03 0.88 ± 0.1 • Forward current AV : IF (AV) = 1.5 A

Contextual Info: CUS10F30 Schottky Barrier Diode Silicon Epitaxial CUS10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.43 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

Contextual Info: CUS10S40 Schottky Barrier Diode Silicon Epitaxial CUS10S40 1. Applications • High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(2) = 0.45 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode USC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CUS10F30 Schottky Barrier Diode Silicon Epitaxial CUS10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.43 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

Contextual Info: CUS10S40 Schottky Barrier Diode Silicon Epitaxial CUS10S40 1. Applications • High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(2) = 0.45 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode USC Start of commercial production

Contextual Info: 1 I Cus1tomer n1 maltion Sheel DRAWING No.; M 8 0 -7 0 4 X XX X SHEET 2 o f T T if in doubt - ORDER CODE: AS*J_J£L± NOT TO S C A L E j THIRD ANGLE PROJECTION | A L L DIMENSIONS IN mm 2.00 X No, OF WAYS PER ROW + 13,10 MAX M80-704XXXX 2,00 X No. OF WAYS PER ROW + 7,00

Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CUS15S30 Schottky Barrier Diode Silicon Epitaxial CUS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode USC Start of commercial production 1 2012-10

Contextual Info: CUS15I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS15I30A Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm 1.25 +− 0.2 0.1 0.13 +− 0.05 0.03 0.88 ± 0.1 • Forward current AV : IF (AV) = 1.5 A

Contextual Info: CUS10I40A Schottky Barrier Diode CUS10I40A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max) @IFM = 0.7 A (2) Average forward current: IF(AV) = 1 A

Contextual Info: CUS10I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS10I30A Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices Unit: mm 1.25 +− 0.2 0.1 0.13 +− 0.05 0.03 0.88 ± 0.1 • Forward current AV : IF (AV) = 1.0 A

Contextual Info: CUS15S30 Schottky Barrier Diode Silicon Epitaxial CUS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode USC ) 25 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25

Contextual Info: CUS15S30 Schottky Barrier Diode Silicon Epitaxial CUS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode USC ) 25 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25

Contextual Info: CUS10I30A TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CUS10I30A Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices Unit: mm 1.25 +− 0.2 0.1 0.13 +− 0.05 0.03 0.88 ± 0.1 • Forward current AV : IF (AV) = 1.0 A

C1850

Abstract: Samsung tv remote control circuit diagram c1860 KS51899 SMCS-51 K9 samsung mov k25 c1860 remote SF 455 D transistor c1850
Contextual Info: 1. S3C1840 S3C1840 DESCRIPTION S3C1840, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The S3C1840