CUS10S30 Search Results
CUS10S30 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CUS10S30,H3F |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 1A USC | Original | 135.35KB |
CUS10S30 Price and Stock
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Toshiba America Electronic Components CUS10S30,H3FDIODE SCHOTTKY 30V 1A USC |
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CUS10S30,H3F | Digi-Reel | 103,437 | 1 |
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CUS10S30,H3F | Reel | 6,000 | 16 Weeks | 3,000 |
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CUS10S30,H3F | 15,922 |
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CUS10S30,H3F | Cut Strips | 2 | 16 Weeks | 1 |
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CUS10S30,H3F | 408 |
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CUS10S30,H3F | Reel | 21,000 | 3,000 |
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CUS10S30,H3F | 4,147 |
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CUS10S30,H3F | 52 |
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CUS10S30,H3F | 35,093 |
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Toshiba America Electronic Components CUS10S30,H3F(TDiode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
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CUS10S30,H3F(T | 6,980 | 3,490 |
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CUS10S30,H3F(T | 8,321 | 14 Weeks | 3,490 |
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CUS10S30,H3F(T | Cut Tape | 7,005 | 1 |
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CUS10S30,H3F(T | 5 |
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CUS10S30,H3F(T | 24 Weeks | 6,000 |
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CUS10S30,H3F(T | 15 Weeks | 3,000 |
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CUS10S30,H3F(T | 4,857 |
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Toshiba America Electronic Components CUS10S30,H3F(BDiode Small Signal Schottky Si 30V 1A 2-Pin USC T/R |
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CUS10S30,H3F(B | 3,000 | 1,021 |
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CUS10S30,H3F(B | 2,400 |
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CUS10S30,H3F(B | 24 Weeks | 3,000 |
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Toshiba America Electronic Components CUS10S30 H3F(T) |
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CUS10S30 H3F(T) | 1,219 |
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Toshiba Corporation CUS10S30,H3F |
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CUS10S30,H3F | 511 | 23 |
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CUS10S30 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
Original |
CUS10S30 | |
Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
Original |
CUS10S30 |