CURRENT SOURCE 5A AC Search Results

smd transistor A1 HB

Abstract: LM5113 WSON 10 DPR0010A Texas Instruments GaN
Contextual Info: LM5113 www.ti.com SNVS725E – JUNE 2011 – REVISED JANUARY 2012 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • Independent high-side and low-side TTL logic inputs 1.2A/5A peak source/sink current

C67078-A1609-A3

Abstract: 0014fl3b kds 9a
Contextual Info: ÔÛD D • 88D fl23SbQS QQ14Ô34 1 m Z I E G 14 834 D BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage Vos » 5A Continuous drain current ¡0 Drain-source on-reslstance ^DS on = 1,5 £2 Description

buz 90 af

Contextual Info: ÖÖD D • 88D fl23SbQS 0014034 1 ■ S I E ß 14834 D T ’' ?>Ct '~ ! 3 BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage KlS » 5A Continuous drain current 1D Drain-source on-resistance ^DS on = 1,5 £2

Contextual Info: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS (on) 0.2Ω ILIMH 5A 1 VCLAMP 70V DPAK TO-252 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

VND5N07

Abstract: VND5N07-1 VND5N0713TR VNK5N07FM VNP5N07FI
Contextual Info: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS (on) 0.2Ω ILIMH 5A 1 VCLAMP 70V DPAK TO-252 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSM05S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 5A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor

Contextual Info: MP5010S 5V, 1A- 5A Programmable Current Limit Switch DESCRIPTION The MP5010S is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

Contextual Info: MP5000S 12V, 5A Programmable Current Limit Switch DESCRIPTION FEATURES The MP5000S is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

Contextual Info: MP5000A 12V, 5A Programmable Current Limit Switch DESCRIPTION FEATURES The MP5000A is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

Contextual Info: MP5007 5V, 1A- 5A Programmable Current Limit Switch DESCRIPTION FEATURES The MP5007 is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

Contextual Info: ÔÛD ö 235 b D s D ooma^M a « s i e g SIEMENS AKTIENGESELLSCHAF BUZ 206 Main ratings N-Channel = 400 V Drain-source voltage I^DS Continuous drain current a 5A h Draln-source on-resistance R,O S o n = 1,5 Q. Description Case FREDFET with fast-recovery reverse diode, N-channel, enhancement mode

Contextual Info: MP5011 12V, 5A Switch with Programmable Current Limit The Future of Analog IC Technology DESCRIPTION FEATURES The MP5011 is a device designed to protect circuitry on the output source from transients on the input (VCC). It also protects the input from undesirable shorts and transients coming from

QFN10

Abstract: MP5001DQ MP5001
Contextual Info: MP5001 5V, 1A- 5A Programmable Current Limit Switch The Future of Analog IC Technology DESCRIPTION FEATURES The MP5001 is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

MP50

Abstract: marking 44W 10-pin MP5000
Contextual Info: MP5000 12V, 5A Programmable Current Limit Switch The Future of Analog IC Technology DESCRIPTION FEATURES The MP5000 is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

Contextual Info: MP5007 5V, 1A- 5A Programmable Current Limit Switch The Future of Analog IC Technology DESCRIPTION FEATURES The MP5007 is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

MP5001DQ

Abstract: MP5001
Contextual Info: MP5001 5V, 1A- 5A Programmable Current Limit Switch The Future of Analog IC Technology DESCRIPTION FEATURES The MP5001 is a protection device designed to protect circuitry on the output source from transients on input (VCC). It also protects VCC from undesired shorts and transients coming from the

Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT9M100B

Abstract: APT9M100S MIC4452
Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

mosfet 1000v 9A

Abstract: APT9M100B APT9M100S MIC4452 1000v 5a ultra fast recovery diode
Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: 150 WATTS CE-150 SERIES AC-DC OUTPUT SPECIFICATIONS Total Output Power FEATURES: •     RoHS Compliant Universal 85-264 VAC Input Compact 4.0" x 7.0" x 1.75" Size 2 Year Warranty One to Four Tightly Regulated Outputs       EN 60950-1 ITE Certification

GCM32ER70J476KE19L

Abstract: DIODE SMD 1206 LED GREEN ROHM Susumu RL Series R1206 GRM033R71 AN1861 SRU1048-3ROY RL7520WT-R027-F GRM188R71H104KA XFMR EFD20
Contextual Info: National Semiconductor Application Note 1861 Ajay Hari July 21, 2008 Introduction The center-tapped secondary of the transformer has 2 turns in each winding, resulting in a 2:1 step-down of the voltage applied across the primary. The transformer secondary voltage is then rectified and filtered with an LC filter to provide the

GCM32ER70J476KE19L

Abstract: DIODE NU planar transformer theory R1206 CMPD2838 N_CHANNEL MOSFET 100V MOSFET C0805 C1206 C1210 GRM188R71H152KA01D
Contextual Info: National Semiconductor Application Note 1861 Ajay Hari December 18, 2008 Introduction The center-tapped secondary of the transformer has 2 turns in each winding, resulting in a 2:1 step-down of the voltage applied across the primary. The transformer secondary voltage is then rectified and filtered with an LC filter to provide the

IEEE-488-2

Abstract: CS-846 constant current source with 500mA
Contextual Info: PURCHASED ITEM 2302-PJ Battery Simulator DC VOLTAGE OUTPUT 2 YEARS, 23°C ± 5°C PULSE CURRENT MEASUREMENT OPERATION OUTPUT VOLTAGE: 0 to +15VDC. OUTPUT ACCURACY: ±(0.05% + 3mV). PROGRAMMING RESOLUTION: 1mV. READBACK ACCURACY1: ±(0.05% + 3mV). READBACK RESOLUTION: 1mV.

Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in