CTE 1600 K Search Results

2N1794-1804

Abstract: 6Cp 80 624A2 Microsemi Catalog 2N1795 2N1796 2N1797 2N1798 2N1799 2N4371
Contextual Info: Silicon Controlled Rectifiers y 804: 2N4371 - 4 3 7 7 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes i— Î i 'i A B C D E F G H J K M N P R S T U r m i K t I i E D TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi

LA1600

Contextual Info: MOflyjlHTOPHblM TPMOfl TRIODE n v i - 1 MoflynflTopHbiM Tpnofl TM-100 npeflHa3HaneH ,qrm y c u n e H u n m o ih h o c t m h m 3 k o m n a c T O T b i b p a flM O T e x H U - necKnx ycTpotiCTBax. CXEMA CO E flM H E H M fl 3 / lE K T P 0 f l0 B C B b lB O flA M M

Contextual Info: ADVANCE INFORMATION A ll in fo rm a tio n in th is d a ta sh e e t is p re lim in a ry a n d s u b je c t to c h a n g e . 7/95 Dual-Channel Cardbus and PCMCIA VCC/VPP Power-Sw itching N e tw o rk O ther key fea tu re s in clu d e gua ra n te ed sp ecifica tio ns fo r o utp ut

70C100B

Abstract: 70C100BF 70C120B 70C120BF 70C50B 70C50BF 70C60B 70C60BF 70C80B 70C80BF
Contextual Info: Silicon Controlled Rectifier Series 70C Dim Inches Minimum TO-208AD T0-83 A B C D E F G H J K M N P R S T U V W X Y Z AA TO-209AC (T0-94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead, add suffix ”IL" to catalog number

Contextual Info: A V A N T E K I N C 4 4 E , 0AVANTEK D m . i m M t b Q APPLICATIONS • Frequency Range: 10 to 2000 MHz • Medium Output Power: +14.5 dBm Typ • Medium Gain: 8.5 dB (Typ) • Temperature Compensated • Surface Mount Option • IF/RF Amplification • Surface Mount Assembly

KAF-16802CE

Abstract: 2N3904 JESD22 KAF-16802LE
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAF-16802CE KODAK KAF-16802LE Image Sensor 4080 H x 4080 (V) Full-Frame CCD Image Sensor With Square Pixels January 22, 2003 Revision 1 1 KAF-16802CE/LE Rev. 1 www.kodak.com/go/imagers 585-722-4385 Email: imagers@kodak.com

U1994

Abstract: 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF102 MPF108 MPF112 PN4416
Contextual Info: d e s ig n e d fo r . S ili c o n ix IH si?l 2 5 ?ine5 Curv8S K . . • VHF/UHF Amplifiers m K l8 3 7 -18 s n-channel JFET b e n e fits * *pecifiecl for2 °M Hz0peration Mixers ■ Oscillators TO-92 See Section 7 AB SO LUTE M A X IM U M R A TIN G S 25°C

V3065

Contextual Info: rEHEPATOPHbIM TETPOfl TETRODE TeHepaTopHbiti TeTpofl ry-91 B npeflHa3HaHeH fl/ia yci/ijieHMfl MOL4HOCTM b ycmiMTermx óeryinetó BOJiHbi m OflHononocHoro ci/ima/ia, a Taioxe flrm yci/meHMH molhHOCTM B paflHOTeXHMHeCKMX ycTpoiicTBax. ry-91 e The ry-91 E tetrode is used for power amplification in

Contextual Info: DIODE MODULE DD25F/KD25F UL;E76102 M Power Diode Module D D 2 5 F series are designed for various rectifier circuits. D D 2 5 F has two diode chips connected in series in 25 mm (linch) width package and the mounting base is electri­ cally isolated from elements for simple heatsink construction.

Contextual Info: Silicon Power Rectifier S /R 5 0 4 Series Dim. Inches Minimum A B C D F G H J K M N R T AA BB CC Notes: 1. Full threads within 2 1/2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode 3 /4 -1 6 1.218 1.350 5.30 .793 .300 UNF 1.250

mpf102 equivalent

Abstract: MPF102 2N5668-70 MPF102 mixer U1994 PN4416 2N3966 2N4416-16A 2N5555 J304-5
Contextual Info: n-channel JFET designed fo r. . . 3 B Silicon ix Perform ance Curves N H See Section 5 • VHF/UHF Am plifiers ■ M ixers ■ Oscillators T l wmM K J B E N E F IT S • Low Cost • Autom atic Insertion Package TO-92 See Section 7 A B S O L U T E M A X IM U M R A T IN G S 25°C

Contextual Info: AVANTEK INC Q a MME v a n t b D B llMlTbb ODGflOa? b Hi AVA . UTO/UTC 2022 Series . . Thin-FHm Cascadable Amplifier 10 to 2000 MHz „ , , k FEATURES APPLICATIONS • Frequency Range: 10 to 2000 MHz • Medium Gain: 10.0 dB Typ • Low VSWR

U1994

Abstract: MPF108 MPF112 K1837-18 2N3966 2N4416-16A 2N5555 2N5668-70 MPF102 PN4416
Contextual Info: KK4416-18 n-channel JFET designed for . . . S ilic o n ix Perform ance Curves NH See Section 5 VHF Am plifiers M ixers BENEFITS • Low Noise NF = 3 dB Typical at 400 MHz • Wide Bandwidth • Low Cost T O -9 2 Lead-form See Section 7 ABSOLUTE M A X IM U M RATINGS 25°C

OV07251

Abstract: Buss M151 varistor buss M200-EX M461 M581-DG M251-CU M400D M151-EF M102D
Contextual Info: Metal Oxide Varistors Bussmann 05 S e rie s to 25 S e rie s - Through Hole M O V’s Maximum Transient Pow er D issipation Ratings Pm Series Pm-watts 0.15 0.25 0.3 0.4 0.45 0.5 05 07 08 10 11 12 Series Pm-watts 0.6 0.6 0.8 1.0 1.2 14 16 18 20 25 Standard Marking:

MPF102 JFET

Abstract: TO-92 CASE U1994 2N3966 2N4416-16A 2N5555 2N5668-70 MPF102 MPF108 MPF112
Contextual Info: 2N 5555 n-channel JFET s î ilic o n ix IH d e • A n a lo g U C h o p p e rs ■ s ig n e d f o r . . . t o is S S w itc h e s S “ sC u r v e s K b e n e f it s • L o w C o st * A u to m a tic In s e rtio n Packag e • N o O ffs e t o r E rro r Voltages G enerated

Contextual Info: Bulletin 127500 08/97 International IG R Rectifier m t. TH R E E PHASE B RIDG E KB SERIES Power Modules Features • Package fully compatible with the industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case

Contextual Info: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings

B-286

Abstract: 11T1 2DI100Z-100 M210 k100a
Contextual Info: 2DI100Z-100 i OOA : Outline Drawings — )V y< 7- POWER TRANSISTOR MODULE Features • ¡ftliJ E H igh V o lta g e • 7 U— l) K r tlt • A S O A ''J 2 liv • In c lu d in g Free W h e e lin g D iode E xcellent Safe O p e ra tin g Area Insu lated Type

Contextual Info: MOSFET MODULE SF150AA50 UL;E76102 M SF1 5 0 A A 5 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 1 5 0 A A 5 0 enable you to control high power with compact p a c k a g e .^ ^ 150A, VDSS= 500V Compact Package

U1994

Abstract: mpf102 equivalent 2N5668-70 2N3966 2N4416-16A 2N5555 J304-5 MPF102 MPF108 MPF112
Contextual Info: MPF108 n-channel JFET d e s ig n e d f o r a S ilic o n ix . . . Performance Curves NH See Section 5 • VHF/UHF A m plifiers B E N E F IT S ■ M ixers • L ow Cost • A u to m a tic Insertion Package ■ Oscillators TO-92 See Section 7 A B S O L U T E M A X IM U M R A T IN G S 25°C

irf640

Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
Contextual Info: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power

ITE 8500

Contextual Info: Bulletin 127136 rev. B 09/97 International i ö r Rectifier i r k u /v io 5 s e r ie s THYRISTOR/THYRISTOR NEWADD-A-pak Power Modules Features 105 A • ■ Electrically isolated: DBC base plate 3500 VRMg isolating voltage ■ ■ Standard JED EC package

TsE 151

Abstract: LR2000-A ERS03 ERS03-40 H160 T151 T760 T810 T930
Contextual Info: ERS03 1600A i Outline Drawings GENERAL IS E RECTIFIER DIODE Features • D iffu s e d -ju n c tio n • Flat p a cka g e typ e • E i i § ! : Applications • E le ctric ra ilw a y a n d ch e m ic a l use rectifie rs • V e h ic le use re ctifie rs •

LED 1550nm

Contextual Info: I f A ll 24926 Highway 108 Sierra Village, CA 95346 Phone: 800 545-1022 Fax: (209) 586-1026 E-Mail: sales @olsontech.com LoUN r itllKli>l AAli IGHNU10GY inc. Prem iseN ode M odel OTPN-400 R eceive Only O p tical Node Features / Benefits Entry level member of the