CTB6 Search Results
CTB6 Price and Stock
PanJit Group BAT54CTB6_R1_00001DIODE ARR SCHOT 30V 200MA SOT563 |
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BAT54CTB6_R1_00001 | Cut Tape | 5,938 | 1 |
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Pentair Equipment Protection - Hoffman UACTB6VRACK TOP VERTICAL BAFFLE 600MM |
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UACTB6V | Bulk | 1 |
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Pentair Equipment Protection - Hoffman UACTB6ARACK TOP ANGLE BAFFLE 600MM |
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UACTB6A | Bulk | 1 |
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3M Interconnect CTB60X41NTS-CCABLE TIE HLDR DUAL SCREW NAT |
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CTB60X41NTS-C | Bulk | 500 |
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CTB60X41NTS-C | Bulk | 2 Weeks, 3 Days | 500 |
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CTB60X41NTS-C | Pack | 5 |
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CTB60X41NTS-C | 200 |
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Hirose Electric Co Ltd CTB-6TB2-M1(50)CONN MOD JACK |
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CTB-6TB2-M1(50) | Bulk |
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CTB6 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BAT54TB6/CTB6 SURFACE MOUNT SCHOTTKY DIODE ARRAYS VOLTAGE 30 Volts POWER 200mWatts SOT-563 FEATURES Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion Extremely Fast Switching Speed Very Low VF: 0.347V Typ at IF = 10mA |
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BAT54TB6/CTB6 2002/95/EC 200mWatts OT-563 OT-563 MIL-STD-750, BAT54TB6 BAT54CTB6 2011-REV | |
DIODE T6 marking
Abstract: CTB6
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BAT54TB6/ATB6/CTB6/STB6/DTB6 200mWatts OT-563 2002/95/EC OT-563 MIL-STD-750, BAT54TB6 BAT54ATB6 BAT54CTB6 BAT54STB6 DIODE T6 marking CTB6 | |
Contextual Info: BAT54TB6/CTB6 SURFACE MOUNT SCHOTTKY DIODE ARRAYS POWER 200mWatts Unit:inch mm 0.011(0.27) 0.006(0.17) FEATURES SOT-563 Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion Extremely Fast Switching Speed |
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BAT54TB6/CTB6 200mWatts OT-563 2002/95/EC IEC61249 BAT54CTB6 OT-563 MIL-STD-750, 2011-REV | |
CTB6
Abstract: diode marking code 77
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BAT54TB6/CTB6 2002/95/EC IEC61249 200mWatts OT-563 OT-563 MIL-STD-750, BAT54TB6 BAT54CTB6 2011-REV CTB6 diode marking code 77 | |
MHW5342AContextual Info: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization |
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MHW5342A/D MHW5342A MHW5342A | |
MHW6342Contextual Info: MOTOROLA Order this document by MHW6342/D SEMICONDUCTOR TECHNICAL DATA The RF Line 77-Channel 550 MHz CATV Amplifier MHW6342 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold |
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MHW6342/D 77-Channel MHW6342 MHW6342 | |
CTR41
Abstract: cc212 ctr32 CTR22 ctr31 CCIR601 CTB40 CTB43 2N101 CTR30
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M65675FP/M65676FP M65675FP/M65676FP SMPTE125M) 10-bit 20/NTSC) 27MHz CTR41 cc212 ctr32 CTR22 ctr31 CCIR601 CTB40 CTB43 2N101 CTR30 | |
transistor P32
Abstract: M37630M4T-XXXFP schematic diagram quanta quanta T1 mitsubishi series 740 software
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FFFB16" FFFA16" 44P6N" 44P6N-A) M37630 transistor P32 M37630M4T-XXXFP schematic diagram quanta quanta T1 mitsubishi series 740 software | |
MHW6172Contextual Info: MOTOROLA Order this document by MHW6172/D SEMICONDUCTOR TECHNICAL DATA The RF Line 77-Channel 550 MHz CATV Input/Output Trunk Amplifier MHW6172 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization |
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MHW6172/D 77-Channel MHW6172 MHW6172/D* MHW6172 | |
ARCO 308
Abstract: MHW1304LA MHW1304LAN
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MHW1304LAN MHW1304LA. ARCO 308 MHW1304LA MHW1304LAN | |
Contextual Info: MOTOROLA Order this document by MHW5172A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5172A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization |
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MHW5172A/D MHW5172A MHW5172A/D* | |
Contextual Info: - 435")3 ) -)#2/#/-054%23 'ROUP 3).',% #()0 ")4 #-/3 -)#2/#/-054%2 l l $%3#2)04)/. The 7630 group is a single chip 8-bit microcomputer designed with CMOS silicon gate technology. Being equipped with a CAN (Controller Area Network) controller circuit, the microcomputer is suited to drive automotive equipment. |
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MHW1303LAContextual Info: MOTOROLA Order this document by MHW1303LA/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW1303LA Features • • • • Specified for 6– and 10–Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good |
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MHW1303LA/D MHW1303LA MHW1303LA | |
Contextual Info: Document Number: MHW1303LAN Rev. 4, 5/2006 Freescale Semiconductor Technical Data Features • Specified for 6 - and 10 - Channel Loading • Excellent Distortion Performance • Low Power Consumption • Capable of Handling Multiple Channels in the Return Path with Good |
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MHW1303LAN MHW1303LA. | |
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MHW1253LAContextual Info: MOTOROLA Order this document by MHW1253LA/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW1253LA Features • • • • Specified for 6– and 10–Channel Loading Excellent Distortion Performance Low Power Consumption Capable of Handling Multiple Channels in the Return Path with Good |
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MHW1253LA/D MHW1253LA MHW1253LA | |
Contextual Info: Freescale Semiconductor Technical Data LIFETIME BUY Features • Specified for 6 - and 10 - Channel Loading • Excellent Distortion Performance • Low Power Consumption • Capable of Handling Multiple Channels in the Return Path with Good Distortion Performance |
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MHW1224LA MHW1224LA | |
Contextual Info: Freescale Semiconductor Technical Data MHW1224LA Rev. 1, 10/2002 CATV Amplifier Module Features • Specified for 6− and 10−Channel Loading • Excellent Distortion Performance • Low Power Consumption • Capable of Handling Multiple Channels in the Return Path with Good |
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MHW1224LA 10-Channel MHW1224LA | |
Contextual Info: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 53– and 60–Channel Performance |
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MHW5382A/D MHW5382A MHW5382A/D | |
Amplifier Modules motorola
Abstract: CTB6
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MHW1254LA/D MHW1254LA MHW1254LA MHW1254LA/D Amplifier Modules motorola CTB6 | |
Contextual Info: MOTOROLA Order this document by MHW6142/D SEMICONDUCTOR TECHNICAL DATA MHW6142 . . . designed specifically for 550 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 77 Channel Performance |
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MHW6142/D MHW6142 MHW6142/D | |
Contextual Info: MOTOROLA Order this document by MHW1224LA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Module MHW1224LA Designed specifically for broadband applications requiring low multi–channel distortion characteristics. Specified for use as return amplifiers for 2–way cable |
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MHW1224LA/D MHW1224LA MHW1224LA MHW1224LA/D | |
Contextual Info: MOTOROLA Order this document by MHW1354LA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Module MHW1354LA Designed specifically for broadband applications requiring low multi–channel distortion characteristics. Specified for use as return amplifiers for 2–way cable |
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MHW1354LA/D MHW1354LA MHW1354LA | |
Contextual Info: MHW1354LA Rev. 4, 1/2006 Freescale Semiconductor Technical Data Will be replaced by MHW1354LAN by end of Q206. N suffix indicates RoHS compliant part. MHW1354LA CATV Amplifier Module Features • Specified for 6– and 10–Channel Loading • Excellent Distortion Performance |
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MHW1354LAN MHW1354LA MHW1354LA | |
CSO10Contextual Info: Freescale Semiconductor Technical Data MHW1253LA Rev. 2, 10/2002 CATV Amplifier Module Features • Specified for 6− and 10−Channel Loading • Excellent Distortion Performance • Low Power Consumption • Capable of Handling Multiple Channels in the Return Path with Good |
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MHW1253LA 10-Channel MHW1253LA CSO10 |