CT75 Search Results

200 ampere MOSFET

Abstract: 200 Ampere power transistor diode 5 ampere FS10UM-5 transistor 5 100V, 200 A MOSFET igbt 600V 450v mosfet mosfet fs series transistor FS 10 SM
Contextual Info: mNEREX Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 MOS Numbering System DiSCtOtC IGBT Example: CT 75 AM - 12 (6 ) (3) (4) (5) CT75AM-12 is a 75 Ampere, 600V, Lead Mount, Insulated Gate Bipolar Transistor (5) Drive Voltage

CT75AM12

Abstract: CT75AM CT75AM-12
Contextual Info: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE OUTLINE DRAWING Dimensions in mm 5 20 MAX. =F <t>3.2 V c e s .600V I c .75A

CT75AM12

Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE CT75AM-12 OUTLINE DRAWING Dimensions in mm 5 2 0M A X. 2 • V c e s . 600V . 75A

ct75am12

Abstract: 300w dc to ac inverter CT75AM CT75AM-12
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT75AM-12 GENERAL INVERTER • UPS USE CT75AM-12 OUTLINE DRAWING Dimensions in mm 5 20MAX. 6 2 φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 600V

Contextual Info: -« U JU O -tS U U U U - •^snmn-'srrrr^- P 5 (P7> NDTEi PINS NOT ELECTRICALLY CDNNECTED ARE DMITTED. ELECTRICAL SPECIFICATIONS! 1,0 INDUCTANCE <P6-J6> I ( P l- J l) I 65 uH TYP B.01V, lOKHz E.O DC RESISTANCE P 6 -J6 P 3 -J3 P 2 -J2 P l- J l I I I I 3,0 CDMMDN MDDEi

Contextual Info: lOOOpF, 2 K V E L E C TR IC A L SPECIFICATIONS« NDTES 1,0 PINS WITHOUT ELECTRICAL CDNNECTIDN ARE DMITTED, 1CT i 1CT± 3/ 1.0 TURNS RATID P 4 - P 5 - P 6 i ( J 3 - J 6 ) 1CT i 1-41CT ± 3V. (P 3 -P 2 -P 1 ) ' ( J 1 -J 2 ) 2.0 INDUCTANCE (P 6 -P 4 ) 350uH MIN, e 0,1V ,lOOKHz, 8nA DC

Contextual Info: 1CT ' LCT LOOOpF, 2 K V E L E C T R IC A L 1,0 TURNS S P E C IF IC A T IO N S : R A T IO P 4 -P 5 -P 6 (P 3 -P 2 -P 1 ) 2,0 IN D U C T A N C E 3.0 LEAKAGE NDTES 1,0 P I N S W I T H O U T E L E C T R I C A L C O N N E C T IO N A R E OMITTED. i 1CT i 1CT± 37.

Contextual Info: NDTESi PINS NDT E L E C T R I C A L L Y CONNECTED ARE DMITTED. ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 1 -J 1 = P 2 -J 2 ; P 4 -J 4 = P 5 -J 5 2 .0 DC RESISTANCE: P 1 -J 1 P 2 -J 2 P 4 -J 4 P 5 -J 5 .5 .5 .5 .5 3 .0 COMMON MODE: CMA — dB : : 65 uH 0 .0 1 V ,

SI-51001

Contextual Info: 1CT : 1CT lOOOpF, 2 K V NDTES 1,0 PINS WITHDUT ELECTRICAL CONNECTION ARE DMITTED, ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P 4 - P 5 - P 6 (P 3 -P 2 -P 1 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE:

Contextual Info: 1 ! 2,5 X M IT ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 6 - P 8 - P 3 (P 2 - P 7 - P 1 2.0 INDUCTANCE: : ( J 6 - J3 : ( J 2 - J1 ) 1CT : 1 + / —3% 1CT : 2.5 + / - 3 % NEITES 200uH MIN. S> 0.01V, 10KHz 35uH MIN. C 0.01V, 10KHz (P 6 - P 3 ) (P 2 - P 1 )

298G8

Abstract: 117E16 240/TDA 2606
Contextual Info: 11-13 Port Road Queenstown, SA 5014 ABN 53 008 189 535 Tel: 8 8240 2244 Fax: 8 8240 2255 Web: www.hammondmfg.com E-mail: australia@hammfg.com 2012 Australian Trade Price List Transformers visit us at www.hammondmfg.com Effective date: September 1, 2012 Replaces all other Price Lists

ALNUP+161609

Contextual Info: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

cbb22

Contextual Info: HAMMOND MANUFACTURING CO. LTD. 394 Edinburgh Road North Guelph, Ontario N1H 1E5 Tel: 519 822-2960 Fax: (519) 822-0715 www.hammondmfg.com Manufacturer’s Suggested Canadian Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures

ND R433

Abstract: sharc 21xxx architecture block diagram ELEC5M DTM-803 dip4 SWT018 schematic diagram epson r230 CT3-42 D25S24AGX00LF IDC 14 F DTF-803
Contextual Info: SHARC Audio EZ-Extender® Manual Revision 1.0, September 2009 Part Number 82-000223-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2009 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written

rb40 bridge

Abstract: TPT50 RB152 RT113 rt842 RTL8101L cb311 bridge rb60 Socket AM2 micro-star
Contextual Info: 5 4 3 2 1 SYS POWER MS1022 BLOCK DIAGRAM Rev. 0A Dothan SOCKET 479 478 uFCPGA PAGE 3,4,5 D CHARGER VRAM DC JACK & SELECTOR +1.1/1.25V VGA Power +1.2V PCI-E Power HOST BUS PAGE 44 , 45 , 46 PAGE 33 FSB 400 / 533 MHz PAGE 34 +1.5V +1.8VDDRM SMDDR_VTERM OZ816

z1031

Abstract: 71-M36S0-003 TD141TGCB1 CLEVO z1021 ICS952007 ICS-93722BF-CLOCK-BUFFER Z1036 sis 302elv SiS302ELV
Contextual Info: 5 4 3 2 1 CLEVO M360S System Block Diagram MEMORY TERMINATIONS Multi Function Board Banias Processor D CPU CORE POEWR VCORE DC/DC BD SHEET 9 D SHEET 32 DDR SDRAM SOCKET ACIN;POWER BUTTON 479 uFCPGA PG3,4 SHEET 30,31 SHEET 32 SHEET 27 SHEET 2,3 SO-DIMM0 SO-DIMM1

71-P2970-002A

Abstract: CH7107A toshiba dvd hdd schematic diagram hdd schematic c71d 28K1 CM85611 intel g31 msi ca151 lcd C116
Contextual Info: Preface LCD Computer L295P/L297P Series Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

SI-50059

Contextual Info: 1.41 CT: 1 lO O O pF, 2 KV NOTES: 1.0 P IN S WITHOUT ELECTRICAL CONNECTION ARE OMITTED. ELECTRICAL SPECIFICATIONS: 1.0 TU R N S RATIO: P 1 - P 3 - P 2 (P 5 -P 4 -P 6 ) : (J 3 : (J 1 - 2.0 INDUCTANCE : 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE:

Contextual Info: -< uuuu 1CT : 1CT lOOOpF, 2KV NDTES 1,0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 - P 5 - P 6 (P 1 -P 2 -P 3 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE:

50-094-1

Contextual Info: 1CT I 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT TX+ TXRX+ RX- lOOOpF, 2KV N DT E S ELECTRICAL SPECIFICATIONS: 1,0 P I N S VITHDUT ELECTRICAL CONNECTION ARE DMITTED, 1.0 TURNS RATIO: P 4 - P 5 - P 6 : ( J 3 - J6 ) (P 3 - P 2 - P 1 ) : ( J 1 - J2 ) 1CT : 1CT± 3%

Contextual Info: I lauui/ arrr © ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 1 -J 1 P 6 -J 6 ) 2 .0 DC RESISTANCE: P 1 -J 1 P 2 -J 2 P 3 -J 3 P 6 -J 6 3 .0 COMMON MODE: FREQUENCY M Hz) = = (P 2 -J 2 (P 3 -J 3 65 65 .5 .5 .5 .5 CMA ( - d B ) TYPICAL uH TYP @.01V, uH TYP @.01V,

SI-50013

Contextual Info: 1CT ì 1CT lOOOpF, 2KV ELECTRICAL SPECIFICATIONS' NDTES 1.0 TURNS RATIO P 4 -P 5 -P 6 i ( J 3 -J 6 ) (P 3 -P 2 -P 1 ) • (J 1 -J 2 ) 2,0 INDUCTANCE (P 6 -P 4 ) 1CT ! 1CT ± 3 V. 350uH MIN, @ 0,1V , lOOKHz, 8mA DC Bias (P3-P1) 3,0 1,0 P I N S W I T H D U T E L E C T R I C A L

Contextual Info: © _ / s rrr\ _ _ / s rrr\ _ _ / s rrr\ _ _ / s rrr\ _ _ / s rrr\ _ _ / ir r r \ _ _ / ir r r \ _ _ / ir r r \ _ ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P 1 - J1 ; (P 2 - J2 ) ; (P 3 - J3 ) ; (P 6 - J6 ) (P 4 - J4 ) ; (P 5 - J5 ) ; (P 7 - J7 ) ; (P 8 - J8 )

Contextual Info: lOOOpF, 2KV ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO : P 1 - P 2 - P 3 (P 5 -P 6 -P 4 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 5 -P 6 )