CT72D Search Results

beam 12FL

Abstract: SI-40227 ability 150g
Contextual Info: PINS 100Q 48.5 o- pFj £KV ELECTRICAL SPECinCATIQNS: NDTES 1,0 P I N S W I T H D U T E L E C T R I C A L C D N N EC T ID N A R E DM ITTED. 1.0 TURNS RATIO : P 8 - P 6 - P 7 : (J 5 -J 3 ) ( P 2 - P 3 - P 1 ) : (J2-J1 J 1CT : 1± 3% 1CT : 1 ± 3% 2.0 INDUCTANCE:

Contextual Info: lOOOpFj 2 K V 1 ! 1 P8 75 -A / W - • 1 • 1,41 @ 75 fp à -AA/V- ELECTRICAL SPECIFICATIO NS; NDTES 1CT : 1CT+ l.D T U R N S R A T ID ( P 6 - P 5 - P 4 ) i ( J 6 - J 3 > (P 3 -P E -P L ) : ( J E - J D 1,0 P I N S W I T H D U T E L E C T R I C A L C O N N EC TIO N A R E DM ITTED,

j1 3003

Contextual Info: 1ÛOÛpF 2KV SHIELD TD3- 12 TRCT3 TD3+ (10 TD2- 9 J8 M X 3 - TRCT2 ( 8 J7 M X 3 + J6 MX1 — T D 2+ J5 M X 2 + J4 M X 2 - T DI J3 MX1 + TRCT1 J2 MXO— J1 M XQ + TD 1+ TDO TRCTO TDO+ NOTES: 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. I nN et Technologies,

590N

Contextual Info: 1 DOOpF, 2 KV NOTES: 1.0 P IN S WITHOUT ELECTR IC AL CO N N ECT IO N A R E OMITTED. E LE C T R IC A L SP EC IFIC A TIO N S: 1.0 TU RN S 2 .0 INDUCTANCE : 3 .0 LEA K A G E INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC R ESIS T A N C E: J 6 - J 3 = ( J 2 - J 1 )

CH0077-S1

Abstract: RM1F
Contextual Info: lO O O p F j £ K V 1 : 1 g 75 -A A / V - ÎP 6 ) S 1 ! 1 - 75 -A A A ^ - E L E C T R I C A L S PE CIFICA T IO N S' N D T E S 1.0 TURNS RATIO Î P 6 - P 5 - P 4 ) ; C J 6 - J 3 ) 1,0 1CT ' 1CT± 3V. P IN S W ITH D U T C O N N EC TIO N (P 3 -P 2 -P D : C J2-JD