CT35SM8 Search Results

STROBE FLASHER USE IGBT

Abstract: CT35SM-8 strobe IGBT CT35SM8
Contextual Info: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 B3 < >3.2 5.45 0.6 O' q w e r VCES ,4 0 0 V ICM . 200A GATE COLLECTOR EMITTER COLLECTOR TO-3P APPLICATION Strobe Flasher.

CT35SM-8

Abstract: CT35SM8
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 •400V • 200A ' VCES >ICM APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES Vges Vgem Icm Tj Tstg Tc = 25 0 Parameter Collector-emitter voltage Gate-emitter voltage

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt FOfTTI D 3Î3 Selector Guide Discrete IGBTs 3rd Generation IGBT Maximum Ratings, Tc =:25°C Device Electrical Characteristics VcE(SAT), (V) Max. Typ- tf(max) (|iS ) 3.0

STROBE FLASHER USE IGBT

Abstract: CT35SM-8
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w e 5.45 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES . 400V

BCR16HM12L

Abstract: TRIAC CR02AM BS08A TRIAC BCR 10 AM BCR16HM-12L triac bcr TRIAC BCR 1 AM TRIAC BCR 12l CR3CM-8 BCR30GM
Contextual Info: WVUEREX Powerex, Inc., 200 m ills Street, Youngwood, Pennsylvania 15897-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 TH 3C . . . & S H iC O tl —. . . Controlled Rectifiers (SCRs) & 3rd Generation IGBT

CT-30sm-12

Abstract: TQ-220F
Contextual Info: • IGBT FOR STROBO FLASHER Max. ratings Type No. V •on A} Vÿfft - - “ 400 130 40 10 ±0.1 7.0 400 130 40 10 ±0.1 7.0 TQ-220F 400 130 40 10 ±0.1 7.0 TO-HOiFin-eut! 400 130 40 10 ±0.1 400 130 16 10 ±0.1 4.0 400 130 16 10 ±0.1 2.0 TO-220|F¡n-cul¡

CT35SM-8

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

CT35SM-8

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TO-220C

Abstract: CT60AM-20
Contextual Info: mtmx Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FOTITI D s t3 Selector Guide Discrete IGBTs 3rd Generation IGBT Maximum Ratings, Tc = 25°C Device Number Applications Electrical Characteristics V CE(SAT), (V)