CS69 Search Results

M-8124

Abstract: usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC114 transistor

Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N2886

Abstract: FZJ 131 2SC15-1 2SC111 usaf516es047m 2SC109 BF119 BF140 j-120 2SC153
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

SFT307

Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n1620

Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E

2SC114 transistor

Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

ba part 3rd year 2012

Abstract: S29CL-J
Contextual Info: S29CD-J and S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J and S29CL-J Flash Family Cover Sheet Data Sheet

s29al008J

Abstract: S29AL008J Spansion S29AL008J70 S29AL008J-70 s29al008 S29AS016J Spansion good die 32Kword 61838 77047
Contextual Info: S29AL008J Known Good Die 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Supplement General Description The S29AL008J in Known Good Die (KGD) form is 8 Mbit, 3.0 volt-only Flash memory. Spansion defines KGD as standard product in die form, tested for functionality and speed. Spansion KGD products have the

S29AS016J

Abstract: S29AS016J70 Spansion Flash 2169 77047
Contextual Info: S29AS016J Known Good Die 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 1.8 Volt-only, Boot Sector Flash Memory Supplement General Description The S29AS016J in Known Good Die (KGD) form is 16 Mbit, 1.8 volt-only Flash memory. Spansion defines KGD as standard product in die form, tested for functionality and speed. Spansion KGD products have the

S29CL-J

Contextual Info: S29CD-J and S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J and S29CL-J Flash Family Cover Sheet Data Sheet

Contextual Info: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O featuring 170 nm Process Technology PRELIMINARY INFORMATION Data Sheet

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

am29f date code markings

Abstract: am29lv date code markings Am29BDD160GB64C
Contextual Info: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: 401036.03BB 3/11/02 3:39 PM Page 121 Compression H-Tap Connectors/Service Entrance Connectors Cat. No. C2BB C5C C7C C9 C9L Capacity* Height Dimension Length Width 1.10 1.60 1.80 2.75 2.75 4.00 3.75 5.00 4.25 7.25 1.05 1.25 1.45 2.00 2.00 All e” O.D., sleeves 2” long or less

LAA080-80-ball

Abstract: JC42 MBM29F PRQ080 S29CD016G S29CD032G S29CD-G fujitsu SL grade LAA080
Contextual Info: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O featuring 170 nm Process Technology Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications

00A1

Abstract: JC42 MBM29F S29CD016G
Contextual Info: S29CD016G 16 Megabit 512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet ADVANCE INFORMATION Distinctive Characteristics Architecture Advantages „ Simultaneous Read/Write operations — Data can be read from one bank while executing

S29CL016J

Abstract: S29CL-J S29CD016J S29CD032J S29CD-J S29CL032J marking code CLJ
Contextual Info: S29CD-J & S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J & S29CL-J Flash Family Cover Sheet Data Sheet Preliminary

PQR080

Abstract: JC42 S29CD016G Am29BDD160GB64C
Contextual Info: Am29BDD160G Data Sheet For new designs, S29CD016G supersedes Am29BDD160G and is the factory-recommended migration path for this device. Please refer to the S29CD016G datasheet for specifications and ordering information. The following document contains information on Spansion memory products. Although the doc-ument

JC42

Abstract: S29CD016G S29CD016J S29CD032G S29CD032J S29CD-G S29CD-J LAA080-80-ball cd016
Contextual Info: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O featuring 170 nm Process Technology S29CD-G Flash Family Cover Sheet

2SC114 transistor

Abstract: 2SC114 2N5425 SA2713 2sc107 FZJ 165 ME2001 R117A R67a transistor 2SC114
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

usaf516es047m

Abstract: transistor T01A transistor 2SC114 usaf517es060m usaf516es048m fzj 165 R117A 2SC114 transistor transistor A431 AT344
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n2255 transistor

Abstract: 2N2246 BC337 hoe BC337-01 NS431 FT053 K4002 NS432 usaf510es030 2N2244
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,