CS-18 1024 Search Results

Contextual Info: Semiconductor DS90C363/DS90CF364 +3.3V Programmable LVDS Transmitter 18-Bit Flat Panel Display FPD Link— 65 MHz, +3.3V LVDS Receiver 18-Bit Flat Panel Display (FPD) Link— 65 MHz Block Diagram s Application HOST G R A PHI CS LCD P A NE L CON TROLL ER

Contextual Info: 32C408B 4 Megabit 512K x 8-Bit SRAM A13 A0 A1 1 36 A2 A3 A4 CS NC A18 A17 A16 A15 OE I/O1 I/O2 Vcc Vss I/O3 I/O8 I/O7 Vss Vcc I/O6 32C408B I/O5 A14 A13 A12 A7 A8 A9 A11 A10 NC 18 19 A11 A10 A9 ROW DECODER A8 A7 MEMORY MATRIX 1024 ROWS x 4096 COLUMNS A6 A5

k143

Contextual Info: N E C ELECTRONI CS I NC blE D % T Æ 7f The /JPD424190A/L and /JPD42S4190A/L are fas t-p a g e d ynam ic RAMs organized as 262,144 words by 18 bits a nd designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or

TLV5638

Abstract: TLV5638CD TLV5638ID TLV5638MFK TLV5638MJG TLV5638QD TLV5638QDR TMS320
Contextual Info: TLV5638 2.7-V TO 5.5-V LOW-POWER DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN SLAS225B – JUNE 1999 – REVISED JUNE 2000 features 8 2 7 3 6 4 5 VDD OUTB REF AGND 2 1 20 19 NC V DD 3 NC 4 18 NC SCLK 5 17 OUTB NC 6 16 NC CS

TLV56xx-family

Abstract: TLV5638 application
Contextual Info: TLV5638 2.7-V TO 5.5-V LOW-POWER DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN SLAS225B – JUNE 1999 – REVISED JUNE 2000 features 8 2 7 3 6 4 5 VDD OUTB REF AGND 2 1 20 19 NC V DD 3 NC 4 18 NC SCLK 5 17 OUTB NC 6 16 NC CS

Contextual Info: WD2511A X.25 Packet Network Interface LAPB FEATURES NO , W CONNECTION REPLYCZ 2 we [ZZ 3 cs CZ 4 re r z 5 CLKCZ 6 MRCZ 7 DALOCZ 8 DAL1 dH 9 DAL2 I 10 DAL3 i 11 DAL4 ( 12 DA15 I 13 DAL6 CH 14 DAL7 CZ 15 RDCZ 16 RCCZ 17 (GND)Vgs I 18 TCC 19 td c z 20 RTS^ 21

32C408BRP-20

Abstract: 32C408BRP-25 32C408BRP-30 F3601 32c49
Contextual Info: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC

32C408BRP-20

Abstract: 32C408BRP-25 32C408BRP-30 512KWORD F3601 32c49
Contextual Info: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC

M08A

Abstract: NM93C86ALZ NM93C86LZ
Contextual Info: General Description Features The NM93C86LZ/C86ALZ is 16,384 bits of CMOS non-volatile, electrically erasable memory available in either 1024 16-bit registers NM93C86LZ , or user organized as either 1024 16-bit registers or 2048 8-bit registers (NM93C86ALZ). The user organization is determined by the

MA5114

Abstract: DS3591-4
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

NTE2114

Contextual Info: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5114 MARCH 1995 DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

MA5114

Abstract: a8415
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

MA5114

Abstract: 17-18L
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

EEPROM

Abstract: AK6416CM DAS05
Contextual Info: ASAHI KASEI [AK6416C] AK6416C 16Kbit Serial CMOS EEPROM Features  ADVANCED CMOS EEPROM TECHNOLOGY  READ/WRITE NON-VOLATILE MEMORY - Wide VCC 1.8V to 5.5V operation - 16384 bits: 1024  16 organization  ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer’s serial communication port directly

NM93CS46M8

Abstract: M08A MTC08
Contextual Info: General Description The NM93CS06/CS46/CS56/CS66 devices are 256/ 1024/ 2048/4096 bits, respectively, of CMOS non-volatile electrically erasable memory divided into 16/64/128/ 256 16-bit registers. Selected registers can be protected against data modification by programming the Protect Register with the

transistor Bc 542

Abstract: hys72v128520gr 72V32600GR-7 PC133R-333-542 CL 3
Contextual Info: HYS 72Vxx5/6x0GR-7.5 Low Profile PC133 Registered SDRAM-Modules 3.3 V Low Profile 168-pin PC133 Registered SDRAM Modules for 1U Server Applications PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1024 MByte Module • 168-pin Registered 8 Byte Dual-In-Line

PC133R-333-542

Abstract: pc133 sdram pc133r sdram PC133R-333-542 VOLTAGE DIMM 72 pin out RAWCARD hys72v128520gr PC133R-333-542 CL 3 AD0800
Contextual Info: HYS 72Vxx5/6x0GR-7.5 Low Profile PC133 Registered SDRAM-Modules 3.3 V Low Profile 168-pin PC133 Registered SDRAM Modules for 1U Server Applications PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1024 MByte Module PreliminaryData Sheet Rev. 0.9 9/01

Contextual Info: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB021 and AT45DB021A Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 1024 Pages (264 Bytes/Page) Main Memory

SEIKO Year of assembly

Abstract: S22H12I01
Contextual Info: S-22H12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22H12R/I is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and

Contextual Info: S i GEC P L E S S E Y SE MI CO N D U C T O R S DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3|im technology. The design uses a 6 transistor cell and has full static operation with

1024M

Abstract: PC2-5300 SN13
Contextual Info: Memory Module Specifications KVR667D2D4F5/8GI 8GB 1024M x 72-Bit PC2-5300 CL5 ECC 240-Pin FBDIMM Description: This document describes ValueRAM’s 8GB 1024M x 72-bit PC2-5300 CL5 SDRAM (Synchronous DRAM) "fully buffered" ECC "dual rank" Intel certified memory module. This module is based on eighteen stacked 1024M x 4bit (thirty-six 512M x 4-bit) 667MHz DDR2 FBGA components. The module also includes an AMB device (Advanced

Contextual Info: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE82FF4A1RR Specifications Features • Density: 8GB • Organization  1024M words x 72 bits, 4 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP FBGA  DDP: 2 pieces of 1Gb chips sealed in one package

S-22S12I

Abstract: S-22S12R X2212 seiko s22s
Contextual Info: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and