CS-18 1024 Search Results

k143

Contextual Info: N E C ELECTRONI CS I NC blE D % T Æ 7f The /JPD424190A/L and /JPD42S4190A/L are fas t-p a g e d ynam ic RAMs organized as 262,144 words by 18 bits a nd designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or

TLV5638

Abstract: TLV5638CD TLV5638ID TLV5638MFK TLV5638MJG TLV5638QD TLV5638QDR TMS320
Contextual Info: TLV5638 2.7-V TO 5.5-V LOW-POWER DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN SLAS225B – JUNE 1999 – REVISED JUNE 2000 features 8 2 7 3 6 4 5 VDD OUTB REF AGND 2 1 20 19 NC V DD 3 NC 4 18 NC SCLK 5 17 OUTB NC 6 16 NC CS

Contextual Info: WD2511A X.25 Packet Network Interface LAPB FEATURES NO , W CONNECTION REPLYCZ 2 we [ZZ 3 cs CZ 4 re r z 5 CLKCZ 6 MRCZ 7 DALOCZ 8 DAL1 dH 9 DAL2 I 10 DAL3 i 11 DAL4 ( 12 DA15 I 13 DAL6 CH 14 DAL7 CZ 15 RDCZ 16 RCCZ 17 (GND)Vgs I 18 TCC 19 td c z 20 RTS^ 21

32C408BRP-20

Abstract: 32C408BRP-25 32C408BRP-30 512KWORD F3601 32c49
Contextual Info: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC

MA5114

Abstract: DS3591-4
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

NTE2114

Contextual Info: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for

DAS05

Abstract: AK6416CM AK6416C AK6416CH SK3132 das05e SK3334
Contextual Info: ASAHI KASEI [AK6416C] AK6416C 16Kbit Serial CMOS EEPROM Features ADVANCED CMOS EEPROM TECHNOLOGY READ/WRITE NON-VOLATILE MEMORY - Wide VCC 1.8V to 5.5V operation - 16384 bits: 1024 x 16 organization ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer’s serial communication port directly

EEPROM

Abstract: AK6416CM DAS05
Contextual Info: ASAHI KASEI [AK6416C] AK6416C 16Kbit Serial CMOS EEPROM Features  ADVANCED CMOS EEPROM TECHNOLOGY  READ/WRITE NON-VOLATILE MEMORY - Wide VCC 1.8V to 5.5V operation - 16384 bits: 1024  16 organization  ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer’s serial communication port directly

transistor Bc 542

Abstract: hys72v128520gr 72V32600GR-7 PC133R-333-542 CL 3
Contextual Info: HYS 72Vxx5/6x0GR-7.5 Low Profile PC133 Registered SDRAM-Modules 3.3 V Low Profile 168-pin PC133 Registered SDRAM Modules for 1U Server Applications PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1024 MByte Module • 168-pin Registered 8 Byte Dual-In-Line

Contextual Info: Memory Module Specifications KVR667D2D4F5/8GI 8GB 1024M x 72-Bit PC2-5300 CL5 ECC 240-Pin FBDIMM DESCRIPTION This document describes ValueRAM’s 8GB 1024M x 72-bit SPECIFICATIONS FBDIMM Module 240-pin JEDEC Standard R/C H or E module. This module is based on eighteen stacked 1024M

END55

Contextual Info: 1560: 11/14/90 Revision: Thursday, June 25, 1992 PRELIMINARY CYM1560 1024K x 9 Buffered SRAM Module with Separate I/O Features Functional Description D HighĆdensity 8Ćmegabit SRAM module plus parity D HighĆspeed CMOS SRAMs The CYM1560 is a very high performance

uPD7720

Abstract: AD2S90 resolver sensor TMS32020 AD2S90AP ADSP-2101 ADSP2105 ADSP-2105 ADSP-2111 P-20A
Contextual Info: a FEATURES Complete Monolithic Resolver-to-Digital Converter Incremental Encoder Emulation 1024-Line Absolute Serial Data (12-Bit) Differential Inputs 12-Bit Resolution Industrial Temperature Range 20-Lead PLCC Low Power (50 mW) APPLICATIONS Industrial Motor Control

AD2S90

Contextual Info: a FEATURES Complete Monolithic Resolver-to-Digital Converter Incremental Encoder Emulation 1024-Line Absolute Serial Data (12-Bit) Differential Inputs 12-Bit Resolution Industrial Temperature Range 20-Lead PLCC Low Power (50 mW) APPLICATIONS Industrial Motor Control

PC2700-25330-B1

Abstract: DDR200 DDR266A DDR333B PC2100 PC2700 HYS72D128020GU-7-A HYS72D64000GU-8-A
Contextual Info: HYS64/72D64000/128020GU-7/8-A Unbuffered DDR-I SDRAM-Modules 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 512 MByte & 1024 MByte Modules PC1600, PC2100 & PC2700 Preliminary datasheet rev. 0.81 • Auto Refresh CBR and Self Refresh • 184-pin Unbuffered 8-Byte Dual-In-Line

Contextual Info: 200PIN DDR2 667 SO-DIMM 1024MB With 64Mx8 CL5 TS128MSQ64V6J Description Placement The TS128MSQ64V6J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit

AT45DB021

Abstract: AT45DB021A AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B-RC AT45DB021B-SC AT45DB021B-TC
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 1024 Pages (264 Bytes/Page) Main Memory Supports Page and Block Erase Operations

PC2100-25330-B1

Abstract: DDR200 DDR266A DDR333B PC2100 PC2700 hys72d12
Contextual Info: HYS64/72D64000/128020GU-7/8-A Unbuffered DDR-I SDRAM-Modules 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 512 MByte & 1024 MByte Modules PC1600, PC2100 & PC2700 Preliminary datasheet rev. 0.8 • Auto Refresh CBR and Self Refresh • 184-pin Unbuffered 8-Byte Dual-In-Line

Contextual Info: 200PIN DDR2 400 SO-DIMM 1024MB With 64Mx8 CL3 TS128MSQ64V4J Description Placement The TS128MSQ64V4J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V4J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit

Contextual Info: 200PIN DDR2 400 SO-DIMM 1024MB With 64Mx8 CL3 TS128MSQ64V4J Description Placement The TS128MSQ64V4J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V4J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit

AT45DB021B

Abstract: AT45DB021 AT45DB021A AT45DB021B-CC AT45DB021B-CI AT45DB021B-RC AT45DB021B-SC AT45DB021B-TC AT45DB021B-SI
Contextual Info: Features • • • • • • • • • • • • • Single 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 1024 Pages (264 Bytes/Page) Main Memory

Contextual Info: 200PIN DDR2 667 SO-DIMM 1024MB With 64Mx8 CL5 TS128MSQ64V6J Description Placement The TS128MSQ64V6J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit

Contextual Info: 200PIN DDR2 400 SO-DIMM 1024MB With 64Mx8 CL3 TS128MSQ64V4J Description Placement The TS128MSQ64V4J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V4J consists of 16pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit

AT45DB021

Abstract: AT45DB021A AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B-RC AT45DB021B-SC AT45DB021B-TC
Contextual Info: Features • • • • • • • • • • • • • Single 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 1024 Pages (264 Bytes/Page) Main Memory

LS-11S

Contextual Info: 6508B/6518B 1024-BIT 1024 X 1 CMOS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUT D E S C R IP TIO N — The 6 5 0 8 B /6 5 1 8 B are high-speed, low -p ow er silicon-gate CMOS static R A M s organ­ ized as 1024 w ords b y 1 b it. These R A M s are designed w ith all inpu ts and o u tp u ts T T L com patible.