CS 1000 JN Search Results

18-LEAD D-6 PACKAGE

Contextual Info: SCOPE: CMOS MICROPROCESSOR-COMPATIBLE, 8-BIT ADC Device Type 01 Generic Number MAX160M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 JN GDIP1-T18 or CDIP2-T18 LP CQCC1-N20 Case Outline

Contextual Info: SCOPE: CMOS MICROPROCESSOR-COMPATIBLE, 8-BIT ADC Device Type 01 Generic Number MAX160M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter Mil-Std-1835 JN GDIP1-T18 or CDIP2-T18 LP CQCC1-N20 Case Outline

ch07

Abstract: ch0j 54HCT241 54LS S4HCT574
Contextual Info: DENSE-PAC MICROSYSTEMS SñE D • 275^415 DODIOS'I 1 ^ D P C DPHDAM8N and DPHDAM16N D ense-Pac M i c r q s y s t e m s jn c ^ _ High Speed Pata Acquisition Module PRELIMINARY 7rS‘/'07-OI DESCRIPTION The D P H D A M 8N and D P H D A M 16N , high speed data

16N250

Contextual Info: DENSE-PAC MICROSYSTEMS SñE D • 275^415 DODIOS'I 1 ^ D P C DPHDAM8N and DPHDAM16N D ense-Pac M i c r q s y s t e m s jn c ^ _ High Speed Pata Acquisition Module PRELIMINARY 7rS‘/'07-OI DESCRIPTION The D P H D A M 8N and D P H D A M 16N , high speed data

Contextual Info: LY P Y 96/H- pssEaiay •;u8ujnoop s \ n \ j.o pu ©qj. *e suojSjAOjd ©qj. o \ p e fq n s je q jjn j. s; ©sp P0AJ0 S0 J s*qßu uv uo^EJodjoQ \n b \ l-O'S l-Z t’^ l - V S 066 m S Z 98 >|OBa |. (ILIOJJ) a u ju n o • suo ^E jn B iju o o z ¿ x p s z ju j

Contextual Info: XL93LC56B Excellence in E: Preliminary Information 2,048-Bit Serial Electrically Erasable PROM 1.8V to 5.5V Operation FEATURES • 1.8V to 5.5V Operation • Extended Temperature Range: -40°C to +85°C • User Selectable Word length • State-of-the-Art Architecture

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Contextual Info: XL93LC66/66A Excellence in E : 4,096-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES • 2.7 to 5.5V Operation XL93LC66 4.5 to 5.5V Operation (XL93LC66A) • Extended Temperature Range: -40°C to +85°C • PIN CONFIGURATIONS Plastic Dual-in-line

mil-std-1553b SPECIFICATION

Abstract: honeywell dcs manual smd code A1t MIL-STD-1773 A1t smd TSI S 14001 1553 SUmmit me 555 AS1773 UT69151
Contextual Info: S f.lMMIT TM Reference Manual Aeroflex Colorado Springs 4350 Centennial Blvd. Colorado Springs, CO 80907 719-594-8000, 719-594-8468 fax www.aeroflex.com/radhard SJ.1MMITTMReference Manual Table of Contents Overview Presentation Section 1 Engineering Notebooks

BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Contextual Info: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag

Contextual Info: Features • Low-Voltage and Standard-Voltage Operation - 5.0 Vcc = 4.5V to 5.5V - 2.7 (Vcc = 2.7V to 5.5V) - 2.5 (Vcc = 2.5V to 5.5V) • 3-W ire Serial Interface • 2 MHz Clock Rate (5V) Com patibility • Self-Timed W rite Cycle (10 ms max) • High Reliability

SCR 9632

Abstract: M14A NM95C12EM NM95C12M NM95C12MM NM95C12N SK213 sk 753 NM95C12
Contextual Info: November 1992 N M 95C 12 1K-Bit CM O S EEPROM w ith Program m able Sw itches General Description Features The NM95C12 is a 976-bit, CMOS EEPROM with 8 non-vol­ atile programmable outputs that can be used as DIP switches in both analog and digital modes. The 976 bits of

AT25128

Abstract: AT25256 X101 X110 012C3
Contextual Info: Features • Serial Peripheral Interface SPI Compatible • Supports SPI Modes 0 (0,0) and 3 (1,1) • Low-voltage and Standard-voltage Operation - 5.0 (Vcc = 4.5V to 5.5V) - 2.7 (Vcc = 2.7V to 5.5V) - 1.8 (Vcc = 1.8V to 3.6V) • 3 MHz Clock Rate • 64-byte Page Mode and Byte W rite Operation

Contextual Info: IBM13M32734BCD 32M X 72 2-Bank R egistered/Buffered SDRAM M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: 1n I -260,-360 I | PC100 I Units! Reg. I Buff. Reg. ! Buff DIMM CAS Latency

D395

Abstract: A0395 ad395
Contextual Info: ANALOG DEVICES ixP Compatible Multiplying Quad 12-Bit D/A Converter AD394/AD395 FEATURES Four Complete 12-Bit CMOS DACs with Buffer Registers Linearity Error ±1/2LSB Tn<jn-T,n„ AD394, AD395K,T Factory-Trimmed Gain and Offset Precision Output Amplifiers for Vour

Contextual Info: NM59C11 National ÆM Semiconductor NM59C11 1024-Bit Serial EEPROM 64 x 16-Bit or 128 x 8-Bit Configurable with Programming Status General Description Features The NM59C11 is 1024 bits of CMOS non-volatile electrically erasable memory organized as either 64 16-bit registers or

GMM26416233

Contextual Info: GMM26416233ENTG 16Mx64, 8Mx8 based, PC100/PC133 Description The GM M 26416233ENTG is a 16M x 64bits S y n c h r o n o u s D y n a m ic R A M M O D U L E which is assem bled 16 pieces o f 8M x Sbits S y n c h ro n o u s D R A M s in 54 p in T S O P II package and one 2048 bit EEPROM in 8pin

Contextual Info: GEC P L E S S E Y S i S E M I C O N D U C T O R S DS4092-2.2 DG646BH25 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 2000A 2500V 867A •t AV dVj/dt 1000V/HS 300A/|iS d lp /d t ■ Variable speed A.C. motor drive inverters (VSD-AC). ■tcm V DRM ■ Uninterruptable Power Supplies

TO-3P Jedec package outline

Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
Contextual Info: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof

Contextual Info: H A R R IS X CDP1826C Semiconductor CMOS 64-Word x 8-Bit Static RAM March 1997 Features Description • Ideal for Small, Low-Power RAM Mem ory Require­ ments in Microprocessor and Microcom puter Applica­ tions The CDP1826C is a general purpose, fully static, 64-word x

DF0066

Contextual Info: Z85C30 Advanced Micro Devices Enhanced Serial Communications Controller DISTINCTIVE CHARACTERISTICS • Two independent full-duplex serial channels ■ Fastest data rate of any Z8530 — 8.192 M H z/2.048 Mb/s — 10 M H z /2.5 Mb/s — 12.5 M H z /3 Mb/s

Contextual Info: ROHM \S ê^ CORP/ Ê EXEL M EL EC S bbE J> m 702^014 m ic r o electro nics ESG « R E M XL93LC66U Excellent* In I? Preliminary ÜDD1777 4,096-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES DIE CONFIGURATION • State-of-the-Art Architecture

Futaba VFD

Abstract: VACUUM FLUORESCENT DISPLAY futaba Futaba segment 13 162-SD-13INK M162SD13AA Futaba 4 Digit 7 Segment VFD Futaba 9G AN-E-2335 Futaba display 16 DIGITS sine wave generator using ic 555
Contextual Info: AN-E-2335 APPLICATION NOTE VACUUM FLUORESCENT DISPLAY MODULE CHARACTER DISPLAY MODULE M162SD13AA GENERAL DESCRIPTION Futaba Vacuum Fluorescent Display Module M162SD13AA, with Futaba VFD 162-SD-13INK display, produces 16 digitsx2 rows with 5×7 dot matrix.

Contextual Info: _XL93LC06A 256-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES • 4.5 to 5.5V Operation • Extended Temperature Range: -40°C to +85°C • Plastic Dual-in-line "P” Package State-of-the-Art Architecture — — — —