CR SOT23 Search Results

Contextual Info: •URGE BAV99 vvvvw.surgecomponents.com Silicon Epitaxial Planar Switching Diode Fast switching in thick and thin-film circuits diode □— cr Marking Code: A7 SOT-23 Plastic Package Absolute Maximum Ratings T* - 25 °C Parameter Symbol Value Unit V rrm

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

SOT-23 ZF

Abstract: KDS226 MARKING ZF SOT-23 ZF SOT23
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREAELECTRONICSCO.,LTD. KDS226 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.). : Cr=0.9pF (Typ.). DIM MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage

Contextual Info: C945LT1 NPN * “G” Lead Pb -Free 3 1 2 C945LT1=CR WEITRON http://www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 130 - 400 - VCE(sat) - - 0.3 Vdc VBEF - - 1.4 V fT 150 -

C945LT1

Abstract: C945L c945
Contextual Info: C945LT1 NPN Transistors P b Lead Pb -Free 3 1 2 C945LT1=CR WEITRON http://www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 130 - 400 - VCE(sat) - - 0.3 Vdc VBEF - - 1.4 V fT

PMBF5484

Abstract: IEC134 PMBF5485 PMBF5486 URC169
Contextual Info: Philips Semiconductors • bbSBTBl D02HQ41 0T3 HIAPX AMER P H ILI PS/ DIS CR ETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES • Low noise SYMBOL • Interchangeability of drain and source connections VDs drain-source voltage

TC2055-2.7VCT

Abstract: 952-1478-1-ND
Contextual Info: Microchip Technology Incorporated 2355 W. Chandler Blvd. Chandler, AZ 85224-6199 M KEY D: Drawing B: BOM P: Part LBL: Label Bill of Materials ASSEMBLY NUMBER: 102-00410 ASSEMBLY NAME: MCP16301 Cuk LED Driver Qty Reference CR: Cross CS: Consign PL: Pack List

ci 8602 gn

Abstract: ci 8602 gn block diagram 12v dc cdi schematic diagram L146 IC 8602 gn Alc201A 12v dc cdi schematic diagram for cdi tk 1838 ir m6502 IR TK 1838
Contextual Info: Schematic Diagrams System Block Diagram M400 System Block Diagram Sheet 1 of 41 System Block Diagram Schematic Diagrams Socket 478 1 of 2 <O>HD#[0 *3] VCC CORK COin r- cr> ;-v^ s> ^ ^ :>;> r - ^ > > s> ^ s> ^ S ’- ^ ^ !•> ^ ^ N ^ ^ ^ ^ ^ ^ ^ ^ ^ r » : >

470M

Abstract: MIL-R-55342 cr SOT23
Contextual Info: terminator and filter networks Fast edge-rated clock signals exhibit transmission line effects resulting in wave reflections and ringing. KOA’s CR X series networks effectively eliminate these transmission line effects. These low profile surface mount networks provide point of contact filtering and are designed

MMBTA56

Abstract: MMBTA92 MMBTA93 NZT6726 NZT6728 NZT6729 PZTA92
Contextual Info: This Surface Mount Transistors Material cr Copyrighted a In D b-1 t-1 LlJ a CD Discrete POWER & Signal Technologies National Semiconductor" Surface Mount Transistors PNP Medium Power jr □ Ln a -O Device No. SOT-23 Mark Case Style ^ CBO (V) Min V CEO V

MV64460

Abstract: 31F4 TP014 TEA 2025 equivalent I384 header10x2 transistor c548 413 mr 6710 30B2 diode af4 c448 100 12p
Contextual Info: CR-1 : @BUCKEYE_PROJ_LIB.BUCKEYE2 SCH_1 :PAGE1 8 6 7 5 4 3 2 1 TABLE OF CONTENTS PAGE - CONTENTS 1 TABLE OF CONTENTS, POWER SUPPLY LIST 2 BLOCK DIAGRAM 3 POWERPC 750FX ADDRESS BUS 4 POWERPC 750FX DATA BUS 5 POWERPC 750FX CONTROL, JTAG 6 POWERPC 750FX POWER

Contextual Info: This I Material cr Ln □ tr 1 b-J ÜJ Copyrighted a a $ Discrete POWER & Signal Nati onal [=1 □ Surface Mount Transistors NPN Darlington Transistors jr a Ln Technologies Semiconductor" Device No. SOT-23 Mirk Case Style VCBO V CEO V EBO By (V) Min (V)

MMBT3904

Abstract: MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT
Contextual Info: This Surface Mount Transistors cr Material In a t-< fcH Copyrighted UJ a a a NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT4401 (2X) Case Style TO-236 (49) ^CBO ^CEO VffiO (V) (V) (V) Min Min Min 60 40 6 'cBO u Max

Contextual Info: KSC3120 NPN EPITAXIAL SIL IC O N T R A N SIST O R MIXER FOR UHF TV TUNER SOT-23 G c E = 1 7 d B T Y P Cr. = 0.6pF (TYP) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: This I cr Material Ln a tH Pro Electron Surface Mount Bipolar Devices continued t -1 UJ □ Copyrighted □ □ JE □ tn ru _□ Device No. (SOT-23 Mark) Case Style V CES * V CEO v CBO (V) (V) Min Min v *CES* V EBO (V) Min V CB (nA) Max (V) hfa c & & CE

OZ960

Abstract: zener diode 7A3 inverter 16b2 zener diode zener 15B2 diode 21D8 10 C4237 54b6 diode 21D8 zener 9A2 11b3 DIODE ZENER
Contextual Info: CR-1 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. PAGE D C 4,5 6,7 8 9 MPC7450 MAXBUS CPU SPEED & CONFIG OPTIONS BOOTBANGER CPU LA CONNECTORS, ESP, CPU BYPASS

bcp55 to

Abstract: bcp55 BCV72-K8 BC859C BC860C BCP52 BCP53 BCP54 BCP56 BCV26
Contextual Info: This I Material cr tn ab Pro Electron Surface Mount Bipolar Devices -1 fc-1 UJ CD Copyrighted a□ jr □ In nj -c: ru j] Device No. SOT-23 Mark I ' ces * 'CBO v h fe V CB (nA) Max (V) hfe Min @ Max 'c & VcE (mA) (v) V GE(SAT) & Max BE(SAT) . w V BE(ON)

PMBFJ174

Contextual Info: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD

A1B sot

Abstract: SOT23 marking 828 BF840 MARKING CODE SMD IC BF841 smd marking lc marking O2 SOT-23 SMD MARKING CODE 515 f h r 740 marking NDp
Contextual Info: •I ^ 5 3 ^ 3 1 0054 714 441 ■ N AflER PHIL IPS/] IS CR ETE APX b7E D BF840 BF841 SILICON PLANAR TRANSISTORS N-P-N transistors in a plastic SO T-23 envelope. P rim a rily intended fo r a.m. m ixers and i.f. a m p lifie rs in a .m ./f.m . receivers using SMD technology.

Contextual Info: N AMER P H I L I P S / D I S CR E T E bb53T31 D01SbS3 DbE D BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK R E FE R E N C E D ATA

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

circuit diagram for micro controller based caller

Abstract: TDK 78P7200-IH 74FCT164245TPV D44 SOT23 RTD25 Framatome Connectors MS gal programming timing chart 3225 EPCOS Radiall R126 RJ45 to DB9F cable adapter
Contextual Info: To o l D es cr ip ti on , DS 1, J ul y 20 00 EASY3445 M 13 F X E v a lu a t i on S y s t e m M 13 M u lt i p le x e r a n d D S 3 F r am e r PEB3445 Datacom N e v e r s t o p t h i n k i n g . Edition 2000-07-15 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

7196A

Abstract: M0178 3050B sot23 nd CR Bourns EN1122
Contextual Info: MATERIAL DECLARATION SHEET SOT23-5 Package Type M0-178 AA Product Line Compliance Date September 1st, 2008 RoHS Compliant Yes (-S suffix) MSL 1 Bourns TISP products complying with RoHS legislation are identified with a “-S ” suffix in the component part number e.g. TISP4C015L1NDR-S

h12e

Abstract: BCW60DR CR SOT23 power 22E mark B1 sot23 BCW60 BCW60A BCW60AR BCW60B BCW60BR
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20