CQY 17 Search Results

CQY86

Abstract: cqy 77 CQY 65 CQY87 V178P V179P V180P 2094V
Contextual Info: A CQY 85 • CQY 86 • CQY 87 V 1 7 8 P - V 1 7 9 P - V180P « n » 'W Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke Application: General indicating purposes

CQY74

Abstract: CQY40L CQY 40 CQY74L cqy 81 CQY 65 CQY 84 cqy 77 cqy40 Anzeige
Contextual Info: « "w CQY 4 0 L • CQY 72 L • CQY 74 L V 168 P • V 169 P V170P I 1 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke A p p lic a tio n : General indicating purposes

TFK 940

Abstract: TFK BPW 75 IR diodes TFK 4 245 TFK 925 cqy 17 IR diodes TFK 4 BPW 64 TFK BPW 14 C TFK BPW 20 diode tfk
Contextual Info: CQY 3 6 /9 • CQY 37/9 Neunteilige Galliumarsenid-Lumineszenzdiodenzeilen 9 Element GaAs Infrared Emitting Diodes Arrays Anwendung: Strahlungsquelle im nahen Infrarot-Bereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers

LP 8029

Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Contextual Info: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.

LP 8029

Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
Contextual Info: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.

BPW17

Abstract: tfk Phototransistor CQY 99
Contextual Info: S< BPW 16/9 • BPW 17/9 'V Neunteilige 9-Element Silicon NPN Epitaxial Planar Phototransistor Arrays Anwendungen: Lochstreifenabtastung A pplications: Punched card and tape readers Features: Besondere Merkmale:

cqy 17

Abstract: infrared diodes
Contextual Info: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1” inch matrix.

BPX99

Abstract: BPW30
Contextual Info: Optoelectronic devices GaAs arrays Multichip arrays, especially for coupling with analogue constructed detector arrays Type Number of elements FigNr. Raster dimensions Characteristics - electrical + optical <Pe mW mA ns ns 16 17 9 9 2.54 2.54 80° 25° 0.53

Contextual Info: SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1”

cqy 17

Abstract: infrared emitters and detectors opto coupler array DATASHEET npn tr array
Contextual Info: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flatlensed or narrow angle components. All leads fit an 0.1” inch matrix.

Contextual Info: SSA-005E&S Miniature IR Array SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is equally suitable for

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

Contextual Info: S tandoff C Dim. B 1.40 4.65 3.15 B.4Q •3.50 6.75 5.55 B.ao Dim. D Total A 16.15 19.15 17.90 20.90 18.25 21.25 20.30 23.30 2 -5 4 .2 0 -8 $ T E C H N IC A L C H A R A C T E R IS T IC S 1 General Characteristics Dimensions: 62.OOLx 4Q.OOW x 19.15H mm 62 COL x 40.00W x 20.90H r m

DIN 50014

Abstract: CQY80
Contextual Info: Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: D etektor: GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, rückwirkungsfreier Schalter A p p lic a tio n s :

CQY 26

Abstract: BPW17N diode 8308
Contextual Info: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

CQY40

Abstract: CQY40L CQY85 CQY86 CQY74 V138P CQX10 V135 V139P V178P
Contextual Info: Optoelectronic devices Light emitting diodes Type Fig. Nr. Case Luminous paint C h aracteristics - electrical + optical Spectral curve see page 71 a /„ mcd 80° 1.6 20 1.6 4 80° 1.6 20 5.0 4 at 'F mA US 5 mm Plastic, dull red 5 mm Plastic, dull red 1

FL 817C

Abstract: K3022P equivalent nec 2561 equivalent 817c moc 3021 and 4n33 TLP 2561 CNY63 TLP 817 PS2001 C817B
Contextual Info: Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Code Definitions A Vishay Telefunken’s device is electrically and mechanically equivalent or better

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

gruner 281

Abstract: gruner 281 A 17 200 D gruner 275 A 17 200 gruner 275 c 17 gruner 283 gruner* 281 B 17 200 D gruner 275 A 17 200 D NRED gruner 275 A A63-120X
Contextual Info: Netzröhre fur GW-Heizung indirekt geheizt TELEFUNKEN DA-AC-Heating indirectly heated A 63-120 X FarbFernsehbiidröhre Colour TV picture tube Vorläufige technische Daten - Tentative data Rechteckige Farb-Fernsehbildröhre. Farbmischung mittels 3 Elektronenstrahlen durch eine Lochmaske

BD512 mosfet

Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
Contextual Info: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964