CQ ON AKA Search Results

4011d

Abstract: IDT71P74104 IDT71P74204 IDT71P74604 IDT71P74804
Contextual Info: Advance Information IDT71P74204 IDT71P74104 IDT71P74804 IDT71P74604 18Mb Pipelined QDR II SRAM Burst of 4 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description The IDT QDRIITM Burst of four SRAMs are high-speed synchronous memories with independent, double-data-rate DDR , read and write

CQX 89

Abstract: IDT71P71104 IDT71P71204 IDT71P71604 IDT71P71804 1N3M 6n39
Contextual Info: Advance Information IDT71P71204 IDT71P71104 IDT71P71804 IDT71P71604 18Mb Pipelined DDR II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 18Mb Density 2Mx8, 2Mx9, 1Mx18, 512kx36 Common Read and Write Data Port Dual Echo Clock Output

Contextual Info: INTEGRATED CIRCUITS e m s y iiT BUS TDA8752 Triple high speed Analog-to-Digital Converter ADC Product specification Supersedes data of 1997 Jun 04 File under Integrated Circuits, IC02 Philips Sem iconductors 1998 Aug 11 PHILIPS Philips Semiconductors Product specification

Contextual Info: INTEGRATED CIRCUITS e m s y iiT BUS TDA8752A Triple high-speed Analog-to-Digital Converter ADC Product specification Supersedes data of 1998 Dec 14 File under Integrated Circuits, IC02 Philips S e m ic o n d u c to rs 1999 Feb 24 PHILIPS Philips Semiconductors

20V P-Channel Power MOSFET 500A

Abstract: HI-508A HI-509A MAX358 MAX358CJE MAX358CPE MAX358CWE MAX358EJE MAX358EPE MAX358EWE
Contextual Info: 1 9 -0 4 4 9 ; R e v 0 ; 4 /8 8 y k i > j x i > k i Fault-Protected Analog M ultiplexer _ F e atu res M a x im ’s H I-508A and M AX358 are 8 ch a n ne l sin g le ended 1 o f 8 m u ltip le xe rs w ith fa u lt p ro te ctio n .

K034

Abstract: nopma KBAA cccp
Contextual Info: AKAÆEMHfl H A YK CCCP KOMHCCHfl nO npOEJIEMAM MHPOBOrO OKEAHA OTBeTCTBeHHLie pejjaKTOpw: axartcMHK JI.M î BpexoeCKux, floKTop fr m m io -MaTeMaTH'iecKHx H ayn H .E . A u d p e e e a MOCKBA ’’HAYKA” 1989 JIHTEPATypA 1. BpexoecKux JI.M. Bojihm b cjiohctux cpenax. M.: Hayica, 1957. 501 c.

817 CN

Abstract: CQ 817
Contextual Info: INTEGRATED CIRCUITS [M m SM EET Ihndj i U ni B U S ] TDA8752A Triple high-speed Analog-to-Digital Converter ADC Product specification File under Integrated Circuits, IC02 Philips Semiconductors 1998 Nov 03 PHILIPS PHILIPS Philips Semiconductors Product specification

SMD MARKING CODE 1am

Abstract: gy 615 smd st smd diode marking code VU diode SMD MARKING CODE 8E smd MARKING 8g marking JE 6 pin 1am smd smd 1AM 1AM DIODE smd diode marking sG
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1996 Apr 26 Philips Semiconductors 1999 May 17 PHILIPS Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B PINNING FEATURES • Total power dissipation:

philips ferrite material specifications

Abstract: BD239 BY239 LXE15450X SC15 mlc444
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

diode BY239

Abstract: BD239 BY239 LLE16045X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors

Contextual Info: STGD3NB60H N-CHANNEL 3A - 600V TO-252 PowerMESH IGBT TYPE STG D 3NB60H V CES V c E s a t lc 600 V < 2.8 V 3 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . L O W O N - V O L T A G E D R O P (Vcesat) . . . . . LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

1427H

Abstract: PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 UPA1427 PA1427
Contextual Info: DATA SHEET «PAI427 SILICON TRANSISTOR ARRAY PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N The ¿¿PA1427 is PNP silico n e p ita xial D a rlin g to n P ow er T ra n sisto r

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM91020L-85, 10, 12 'd e s c r i p t i o n ! The THM91 0 20L is a 1,048,576 words by 9 bits dynamic RAM module which assembled pcs of TC511 0 00J on b oth sides of the printed circuit board. The T H M 9 1 0 20L is optimized for application to the systems wh i c h are required high

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 91022L-85, 10 , 12 [description ! The THM91022L is a 1,048,576 w o r d s b y 9 bits dynamic R A M m o d u l e w h i c h assembled 9 pcs of TC511002J on b o t h sides of the printed circuit board. The THM91022L is optimized for a p plication to the systems w h i c h are required

BAP64-05

Contextual Info: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled.

SMO-14

Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Contextual Info: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication

diode a62

Abstract: BAP51-03 diode smd ED 74 lm 9805
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance

BAP64-02

Abstract: v 817 y
Contextual Info: DISCRETE SEMICONDUCTORS Æ m SIHIEET BAP64-02 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-02 PINNING FEATURES • High voltage, curre n t controlled.

bap64-03

Abstract: lm 9805 DIODE ED 99
Contextual Info: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-03 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-03 PINNING FEATURES • High voltage, curre n t controlled.

SMD diode sg 46

Abstract: SMD diode sg 03
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS

7MBR50SA060

Abstract: D005
Contextual Info: This m a te ria l and tha Inform ation herein It the p roperty of the third express written Co„ L td . purposes w ith o u t consent of Fuji Electric party,nor used or the m anu facturing Fuji Electric CoJ.id,"They shall be neither reproduced, c o p ie d

BDT91

Abstract: BY239 LLE15370X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors

LLE16350X

Abstract: BDT91 BY239
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors

Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2045N UHF power transistor 1998 Apr 07 Preliminary specification Supersedes data of 1997 Oct 23 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification