CPS130 Search Results

Contextual Info: PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization

"Silicon Controlled Rectifier"

Abstract: datasheets of scr CPS130 CS220-16M CSDD-16M SCR process
Contextual Info: PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24