CPH5 Search Results

it-007

Abstract: CPH5605 IT01080
Contextual Info: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON

CPH5617

Abstract: MARKING FZ TA-3722
Contextual Info: CPH5617 Ordering number : EN7370A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH5617 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly.

Bipolar Junction Transistor

Abstract: 680P CPH5902 SPICE PARAMETER, sanyo, bipolar transistor jfet bf a 1023 transistor SPICE PARAMETER, CPH5902
Contextual Info: CPH5902 Base Emitter/Drain Source NPN-TR J-FET Gate Collector Schematic of CPH5902 SPICE PARAMETER N JFET Parameter Value Unit Parameter Value Unit VTO BETA LAMBDA RD RS RG IS N -0.734 26.0m 21.5m 0.80 0.80 0.08 1.00f 1.06 V CGD CGS 6.80p 6.80p F PB MJ FC

Contextual Info: Ordering number : EN7291B SBE805 Schottky Barrier Diode http://onsemi.com 30V, 0.5A, Low IR, Non-Monolithic Dual CPH5 Common Cathode Features • • • • Low forward voltage VF max=0.55V Fast reverse recovery time (trr max=10ns) Composite type with 2 diodes contained in the CPH package currently in use, improving the mounting

Contextual Info: CPH5513 CPH5513 Ordering number : EN7311A Silicon Epitaxial Type Pin Diode for VHF, UHF, AGC Applications Features • • • Small interterminal capacitance C=0.23pF typ . Small forward series resistance (rs=2.5Ω typ). Composite type with 2 diodes contained in a CPH package currently in use, improving the mounting efficiency greatly.

ENN6918

Abstract: CPH3209 CPH5503
Contextual Info: Ordering number : ENN6918 CPH5503 NPN Epitaxial Planar Silicon Transistor CPH5503 DC / DC Converter Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2162 Features 0.15 3 0.6 4 0.05 1 2 0.95 0.4 1 : Collector TR1

Contextual Info: Ordering number:ENN*6451 N-Channel and P-Channel Silicon MOSFETs CPH5606 Ultrahigh-Speed Switching Applications Preliminary Package Dimensions unit:mm 2168 [CPH5606] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5606 incorporates on N-channel MOSFET and a P-channel MOSFET that feature low ON

Contextual Info: Ordering number:ENN6368 N-Channel Silicon MOSFET CPH5602 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5602] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

MCH3307

Abstract: SBS004 ENN8235 2171A
Contextual Info: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)

TA-2946

Abstract: transistor TE 2162
Contextual Info: Ordering number : ENN6793 | NPN Epitaxial Planar Silicon Transistor CPH5504 High-Current Switching Applications Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions u n it: mm 2162 Features • Composite type with 2 NPN transistors in one

Contextual Info: Ordering number:ENN6091 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5702 DC/DC Converter Applications Features Package Dimensions • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating

Contextual Info: Ordering number : EN6962C CPH5902 N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly

Contextual Info: Ordering number : ENA0492A CPH5518 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density

CPH5862

Contextual Info: CPH5862 注文コード No. N A 0 4 6 4 三洋半導体データシート N CPH5862 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。

TA3722

Abstract: marking FZ TA-3722 CPH5617 pgd250 TA-372
Contextual Info: Ordering number : ENN7370 CPH5617 N-Channel Silicon MOSFET CPH5617 Ultrahigh-Speed Switching Applications • unit : mm 2168 [CPH5617] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in the

ic 74192

Abstract: 74193 application diagrams of IC 74191 ic 74193 74192 ic IC 7419 Ic 74191 of IC 74193 2SA1344 CPH5514
Contextual Info: Ordering number : ENN7419 CPH5514 PNP Epitaxial Planar Silicon Transistor CPH5514 Switching Applications with Bias Resistance Features 0.15 0.2 4 3 0.05 0.6 • [CPH5514] 2.9 0.6 • On-chip bias resistance (R1=10kΩ, R2=10kΩ). unit : mm Composite type with 2 transistors contained in the

IT01101

Abstract: CPH5604
Contextual Info: Ordering number:ENN6440 N-Channel Silicon MOSFET CPH5604 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5604] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Composite type with 2 MOSFETs contained in a

CPH5601

Contextual Info: Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

Contextual Info: CPH5512 Ordering number : EN7310B SANYO Semiconductors DATA SHEET CPH5512 Silicon Epitaxial Type Pin Diode for VHF, UHF, AGC Applications Features • • • Composite type with 2 diodes contained in a CPH package currently in use, improving the mounting efficiency greatly

2SK932

Abstract: CPH5901 2SC4639 ITR10329 ITR10330 npn fet
Contextual Info: CPH5901 注文コード No. N 8 2 7 8 A 三洋半導体データシート 半導体ニューズ No.N8278 とさしかえてください。 CPH5901 TR : NPN エピタキシァルプレーナ型シリコントランジスタ FET : N チャネル接合型シリコン電界効果トランジスタ

Contextual Info: CPH5871 Ordering number : ENA1401A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5871 General-Purpose Switching Device Applications Features • • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package

diode N1004

Abstract: CPH5812 MCH3317 N1004 SBS010M TA-3787 74674
Contextual Info: CPH5812 Ordering number : ENN7467A CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.

7382

Abstract: CPH5820 D2503 MCH3308 SBS006M
Contextual Info: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171

CPH5815

Abstract: MCH3317 SBS007M
Contextual Info: Ordering number : ENN7381 CPH5815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5815 DC / DC Converter Applications 4 0.15 3 0.6 5 0.2 [CPH5815] 2.9 0.05 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 0.7 0.2 • Composite type with a P-Channel Sillicon MOSFET