high current schottky diode
Abstract: Schottky diode Die Schottky Diodes diode Schottky Diode Schottky diode wafer CPD98V
Contextual Info: PROCESS CPD98V Central Schottky Diode Semiconductor Corp. Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 6.3 x 6.3 MILS Top Side Metalization Al - 30,000Å
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cpd98vhigh current schottky diodeschottky diode dieschottky diodes+3diodeschottky diodeschottky diode wafer
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"Schottky Diode"
Abstract: CPD98V high current schottky diode diode silicon
Contextual Info: PROCESS CPD98V Schottky Diode Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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cpd98v13-augustschottky diodehigh current schottky diode+1diode silicon
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CPD98V
Abstract: high current schottky diode
Contextual Info: PROCESS CPD98V Schottky Diode Silicon High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
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cpd98v22-marchhigh current schottky diode |
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1n456cpd641n456a1n457+121n457a1n458bf244 datasheet2n5133 equivalentmps5771bd345bd347bf2442n5248bf2562n33042n5910
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UJT 2n3904
Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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ujt 2n3904transistor 2n4033ujt 2n60272n4209 datasheet+6mj15003 equivalenttransistor 2n5401mj150042n4393mj15003 mj15004bav45
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2N2645
Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Contextual Info: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.
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cpd83v-1n914-wncpd83v-1n914a-wncpd83v-cmpd7000-wscpd83v-1n4148-ws+14cpd83v-1n914-wrcpd92x-cmpd6263-wrcpz25-cmz5937b-wncpz25-cmz5940b-wncpz25-1n4752a-wncpz25-1n5918b-wn2n26451n3070cpz25cpd83v-1n4148-wncp191v-2n2222a-wncpz25-cmz5937b-wrcpd83vcpd98v
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