CP353V
Abstract: CZT853
Contextual Info: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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cp353vczt85322-march |
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CHIP TRANSISTOR
Abstract: transistor CP353V CZT853
Contextual Info: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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cp353vczt853chip transistortransistor |
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CP353V
Abstract: CZT853
Contextual Info: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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cp353vczt85323-may435-182ess |
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1n456cpd641n456a1n457+121n457a1n458bf244 datasheet2n5133 equivalentmps5771bd345bd347bf2442n5248bf2562n33042n5910
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UJT 2n3904
Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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ujt 2n3904transistor 2n4033ujt 2n60272n4209 datasheet+6mj15003 equivalenttransistor 2n5401mj150042n4393mj15003 mj15004bav45
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