CONSTRUCTION OF PHOTO DIODE Search Results

1550nm photo diode for 10Gbps

Abstract: MXP4003 MXP4005
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die

TEMD5080

Contextual Info: Tem ic TEMD5000 S e m i c o n d u c t o r s Silicon PIN Photodiode Description TEMD5000 is a high speed and high sensitive PIN photo­ diode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications.

Contextual Info: Temic TEMD5100 S e m i c o n r i u c t n r s Silicon PIN Photodiode Description T E M D 5 100 is a high speed and high sensitive PIN photo­ diode in a m iniature flat plastic package. Its top view construction m akes it ideal as a low cost replacem ent of

construction of photo diode

Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Contextual Info: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

photo diode

Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

construction of photo diode

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

PIN PHOTO DIODE

Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

MXP4000

Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

colour sensor

Abstract: siemens photo sensor MTI04 PHOTO SENSOR of application construction of photo diode Ir sensor 3 pin details TO5 package 3-element colour sensor 6581 IR blocking SENSOR
Contextual Info: DATA-SHEET MCS3AT/BT 3-element colour sensor – TO5 FUNCTION The colour sensors are made of 3 Si-PIN photo diodes integrated on chip. They are carried out as segments of a ring with the diameter of 2,0 mm. The design as Si-PIN photo diodes allows signal frequencies up to MHz-range. In order to achieve a small cross talk between

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: MCSIBT IR blocking SENSOR construction of photo diode IR SENSOR TO5 package MTI04
Contextual Info: DATA-SHEET MCSi Integral 3-Element Colour Sensor 1. FUNCTION The colour sensors are made of 19 x 3 Si-PIN photo diodes integrated on chip. They are carried out as a hexagonal matrix with the diameter of 3 mm. The design as Si-PIN photo diodes allows signal frequencies up to MHz-range. In order to achieve a small cross talk

Contextual Info: DATA-SHEET MCS3AS 3-element colour sensor – SMD/SO8 FUNCTION The colour sensors are made of 3 Si-PIN photo diodes integrated on chip. They are carried out as segments of a ring with the diameter of 2,0 mm. The design as Si-PIN photo diodes allows signal frequencies up to MHz-range. In order to achieve a small cross talk between

all diodes ratings

Abstract: diode color code APC 5000 construction of photo diode dual laser diode HA 1335 HT 8870 Laser InP OL3300N-02 OL3300W
Contextual Info: Oki Semiconductor 0L3300N-02 and 0L3300W Low-Cost Laser Diode Modules D ES C R IP TIO N The 013300N -02 and 013300W are 1310 nm w avelength InG aA sP /InP laser diodes coupled to a single­ mode fiber w ith a pigtail. The 013300N -02 and OL3300W are provided in mini dual-in-line surface-m ount packages for com pact

MCS3AO 3-element colour sensor

Contextual Info: DATA-SHEET MCS3AO 3-element colour sensor – TO5 with optics FUNCTION The colour sensors are made of 3 Si-PIN photo diodes integrated on chip. They are carried out as segments of a ring with the diameter of 2,0 mm. The design as Si-PIN photo diodes allows signal frequencies up to MHz-range. In order to achieve a small cross talk between

OL3300W

Abstract: SC CONNECTOR
Contextual Info: DATA SHEET O K I O P T I C A L C O M P O N E N T S OL3300W Low-Cost, Mini-Dil Laser Diode Module 1300 nm, 1.0 mW January 2001 –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

TLP722

Abstract: TLP722F E67349 VDE0884
Contextual Info: TLP722 TOSHIBA Photocoupler Photo−Diode TENTATIVE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722: Single circuit • Cathode−anode voltage: 30V (max)

FPGA+Virtex+6+pin+configuration

Contextual Info: Preliminary Data Sheet MTCSiCT Integral True Colour Sensor – TO5 with IR blocking Table of contents 1 FUNCTION . 2 2 APPLICATION . 2

Contextual Info: The information disclosed herein was originated by and is the property of MAZeT. MAZeT reserves all patent, proprietary, design, use, sales, manufacturing an reproduction rights thereto. Product names used in this publication are for identification purposes only

MAZET

Abstract: MCS3AO 3-element colour sensor MTI04
Contextual Info: The information disclosed herein was originated by and is the property of MAZeT. MAZeT reserves all patent, proprietary, design, use, sales, manufacturing an reproduction rights thereto. Product names used in this publication are for identification purposes only

construction of photo diode

Abstract: SMD CATHODE COLOUR BLUE diode
Contextual Info: The information disclosed herein was originated by and is the property of MAZeT. MAZeT reserves all patent, proprietary, design, use, sales, manufacturing an reproduction rights thereto. Product names used in this publication are for identification purposes only

MTCSiCS

Abstract: Dielectric Filters IR blocking SENSOR
Contextual Info: Preliminary Data Sheet MTCSiCS Integral True Colour Sensor – LCC with IR blocking Table of contents 1 FUNCTION . 2 2 APPLICATION . 2

Din 5033

Abstract: colour sensor
Contextual Info: Preliminary Data Sheet MTCS3AT 3-element True Colour Sensor – TO5 Table of contents 1 FUNCTION .2 2 APPLICATION .2

Contextual Info: Preliminary Data Sheet MTCSiCO Integral True Colour Sensor – TO5 with optics Table of contents 1 FUNCTION . 2 2 APPLICATION . 2

LORIN

Abstract: 3P3T switch high voltage diode high voltage diodes normal radar circuit PECVD mesa diode
Contextual Info: Development of a High Voltage mmW GaAs PIN Diode Switch David Hoag, Daniel Curcio and Timothy Boles M/A-COM: Tyco Electronics, 43 South Ave, Burlington, MA 01803 USA Phone: 781-564-3330, email: hoagd@tycoelectronics.com  2001 GaAs Mantech ABSTRACT The initial development of a three pole three throw,

TLP503

Abstract: TLP501 TLP582 tlp505 TL 582 OPTICAL COUPLER triac based ac motor speed control using light Toshiba tlP521 Photocoupler TLP506G k 3531 transistor
Contextual Info: 8. Application Note 8-1 8-1-1 Outline of Photocouplers Description of Photocouplers for General Purposes • Structure and Basic Characteristics Demand for photocouplers entered a real growth period around 1977. The background for this is the increasing application in signal transmission between CPU and peripheral