COMMON COLLECTOR PNP Search Results

Contextual Info: 2957 , HIGH-VOLTAGE HIGH-CURRENT SOURCE DRIVER Comprised of five common-collector NPN Darlington output stages, associated common-base PNP input stages, and a common ENABLE stage, the UDN2957A high-voltage, high-current source driver is used to switch the ground end of loads that are directly connected to a

EMC3DXV5T5

Contextual Info: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MAXIMUM RATINGS TA = 25°C unless otherwise noted, common for Q1

Contextual Info: MMDTA124W PNP Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA124W 22 22 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage

Contextual Info: MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Features ■ Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)

2097B

Abstract: 2SC4520 FP207 marking 207
Contextual Info: Ordering number:ENN6457 PNP/NPN Epitaxial Planar Silicon Transistors FP207 Push-Pull Circuit Applications Package Dimensions unit:mm 2097B [FP207] 1.5 5 4 3 2 1 0 to 0.1 0.2 0.3 1.75 1 : Base 1 PNP TR 2 : Collector 1 (PNP TR) 3 : Emitter Common 4 : Collector 2 (NPN TR)

NTE44

Abstract: NTE45
Contextual Info: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

NTE43

Abstract: NTE42
Contextual Info: NTE42 NPN & NTE43 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

NTE40

Abstract: NTE41
Contextual Info: NTE40 NPN & NTE41 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

NTE42

Abstract: NTE43 transistor NTE43
Contextual Info: NTE42 NPN & NTE43 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

NTE44

Abstract: NTE45
Contextual Info: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

EMC3DXV5T5

Contextual Info: EMC3DXV5T1, EMC3DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with

Contextual Info: MMDTA143X PNP Silicon Epitaxial Planar Transistor Digital Transistor with built-in resistors for switching and interface circuit and drive circuit applications Base (Input) Collector (Output) R1 R2 Emitter (Common) SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC)

SMD310

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with

norton amplifier

Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output

EMC2DXV5

Abstract: EMC4DXV5
Contextual Info: EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 2 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 1 R2 Q2 R2 Q1 The BRT Bias Resistor Transistor contains a single transistor with

NSTB1005DXV5T1

Abstract: NSTB1005DXV5T1G
Contextual Info: NSTB1005DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

EMC3DXV5T5G

Abstract: EMC2DXV5 EMC4DXV5
Contextual Info: EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 2 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 1 R2 Q2 R2 The BRT Bias Resistor Transistor contains a single transistor with

MMDT511HW

Abstract: 5114 MMDT5116W
Contextual Info: MMDT5110W…MMDT511ZW PNP Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5110W 47 - MMDT511DW 47 10 MMDT5111W 10 10 MMDT511EW 47 22