COMMON COLLECTOR PNP Search Results

Contextual Info: 2957 , HIGH-VOLTAGE HIGH-CURRENT SOURCE DRIVER Comprised of five common-collector NPN Darlington output stages, associated common-base PNP input stages, and a common ENABLE stage, the UDN2957A high-voltage, high-current source driver is used to switch the ground end of loads that are directly connected to a

EMC3DXV5T5

Contextual Info: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MAXIMUM RATINGS TA = 25°C unless otherwise noted, common for Q1

UDN2957A

Abstract: UDN-2957A IUPN2957A
Contextual Info: HIGH-VOLTAGE, H IG H -CU RRENT SOURCE D RIVER Comprised of five common-collector NPN Darlington output stages, associated common-base PNP input stages, and a common ENABLE stage, the UDN2957A high-voltage, high-current source driver is used to switch the ground end of loads that are directly connected to a

Contextual Info: MMDTA124W PNP Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA124W 22 22 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage

Contextual Info: MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage

BCV65B

Abstract: BCV65
Contextual Info: Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES BCV65; BCV65B PINNING • Low current max. 100 mA PIN • Low voltage (max. 30 V). DESCRIPTION collector 1 ,3 APPLICATIONS 2 common base 4 common emitter • General purpose switching and amplification.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Features ■ Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)

2097B

Abstract: 2SC4520 FP207 marking 207
Contextual Info: Ordering number:ENN6457 PNP/NPN Epitaxial Planar Silicon Transistors FP207 Push-Pull Circuit Applications Package Dimensions unit:mm 2097B [FP207] 1.5 5 4 3 2 1 0 to 0.1 0.2 0.3 1.75 1 : Base 1 PNP TR 2 : Collector 1 (PNP TR) 3 : Emitter Common 4 : Collector 2 (NPN TR)

NTE44

Abstract: NTE45
Contextual Info: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

NTE43

Abstract: NTE42
Contextual Info: NTE42 NPN & NTE43 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

NTE40

Abstract: NTE41
Contextual Info: NTE40 NPN & NTE41 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

NTE42

Abstract: NTE43 transistor NTE43
Contextual Info: NTE42 NPN & NTE43 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

NTE44

Abstract: NTE45
Contextual Info: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Contextual Info: UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http://onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC−88A/SOT−353 CASE 419A STYLE 6 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVUMC2NT1G

Abstract: NSVUMC2 UMC3NT1G SC marking code NPN transistor
Contextual Info: UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http://onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC−88A/SOT−353 CASE 419A STYLE 6 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMC3DXV5T5

Contextual Info: EMC3DXV5T1, EMC3DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with

marking u5

Contextual Info: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with

Contextual Info: UMC2NT1G, UMC3NT1G, UMC5NT1G Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 2 R1 The Bias Resistor Transistor BRT contains a single transistor with

IC 4050 DATA SHEET

Abstract: SOT-353 transistor marking T2
Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with

SC-88A npn

Contextual Info: UMC2NT1G, UMC3NT1G, UMC5NT1G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with