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    COMMON BASE AMPLIFIER CIRCUIT DESIGNING Search Results

    COMMON BASE AMPLIFIER CIRCUIT DESIGNING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM759H/B
    Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy
    HA2-2541-2
    Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy
    LM759CH
    Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 PDF Buy
    LM1536J/883
    Rochester Electronics LLC LM1536 - Operational Amplifier - Dual marked (7800304PA) PDF Buy
    LM108AL
    Rochester Electronics LLC LM108 - Super Gain Op Amp PDF Buy

    COMMON BASE AMPLIFIER CIRCUIT DESIGNING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    yig oscillator application note

    Abstract: Dielectric Resonator Oscillator DRO dielectric resonator dielectric resonator oscillator variable oscillator Lumped Resonator Oscillator A008 amplifier TRANSISTOR AT-41400 bipolar transistor ghz s-parameter FET transistors with s-parameters
    Contextual Info: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to


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    5964-3431E 5968-3628E yig oscillator application note Dielectric Resonator Oscillator DRO dielectric resonator dielectric resonator oscillator variable oscillator Lumped Resonator Oscillator A008 amplifier TRANSISTOR AT-41400 bipolar transistor ghz s-parameter FET transistors with s-parameters PDF

    AVANTEK YIG tuned oscillator

    Abstract: yig oscillator hp Avantek yig avantek yig oscillator avantek YTO AVANTEK, yig yig oscillator avantek avantek vto Design DC Stability Into Your Transistor Circuits A008 amplifier TRANSISTOR
    Contextual Info: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to


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    5964-3431E 5968-3628E AVANTEK YIG tuned oscillator yig oscillator hp Avantek yig avantek yig oscillator avantek YTO AVANTEK, yig yig oscillator avantek avantek vto Design DC Stability Into Your Transistor Circuits A008 amplifier TRANSISTOR PDF

    MSA-05

    Contextual Info: Designing With The MSA-9970 Application Note S008 Introduction OPEN LOOP GAIN GAIN The MSA-9970 differs from other products in the MSA Series in that designs with this device are expected to use external circuit elements to establish RF performance. Through proper selection of this external


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    MSA-9970 5091-9313E MSA-05 PDF

    Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

    Contextual Info: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way


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    1990s, Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design PDF

    uhf amplifier design

    Abstract: 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL
    Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN419/D SEMICONDUCTOR APPLICATION NOTE AN419 UHF AMPLIFIER DESIGN USING DATA SHEET DESIGN CURVES INTRODUCTION k [y12 y21 + Re y12y21 ] Freescale Semiconductor, Inc. GL = The design of UHF amplifiers usually involves a particular


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    AN419/D AN419 y12y21) uhf amplifier design 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL PDF

    cd4024 applications

    Abstract: cd40245 hp1106a CT5602-2 "tunnel diode" oscillator HP1106 TD1107 "DC Drive" damp iris tunnel diode Design Considerations for Triggering of Flashlamp
    Contextual Info: Application Note 98 November 2004 Signal Sources, Conditioners and Power Circuitry Circuits of the Fall, 2004 Jim Williams Introduction Occasionally, we are tasked with designing circuitry for a specific purpose. The request may have customer origins or it may be an in-house requirement. Alternately, a circuit


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    an98f AN98-27 AN98-28 cd4024 applications cd40245 hp1106a CT5602-2 "tunnel diode" oscillator HP1106 TD1107 "DC Drive" damp iris tunnel diode Design Considerations for Triggering of Flashlamp PDF

    advantage of fm transmitter two stage

    Abstract: dsss demodulator receiver qpsk schematic diagram TA0024 transmitter bpsk schematic diagram DSSS RF2903 direct sequence spread spectrum BPSK Quadrature Phase Shift Keying Modulator Demodulator direct sequence spread spectrum
    Contextual Info: TA0024  TA0024 tions RF2903: A Highly Integrated Receiver IC for Spread Spectrum Applica-            An integrated receiver has been developed which includes most of the circuitry needed for reception of a


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    TA0024 RF2903: 915MHz SSOP-24 advantage of fm transmitter two stage dsss demodulator receiver qpsk schematic diagram TA0024 transmitter bpsk schematic diagram DSSS RF2903 direct sequence spread spectrum BPSK Quadrature Phase Shift Keying Modulator Demodulator direct sequence spread spectrum PDF

    Contextual Info: P H S IG E C p l e s s e y AD VANC E INFORMATION 3047 3 2 SL6442 1GHZ AMPLIFIER/MIXER Supersedes May 1992 Edition The SL6442 UHF Amplifier and Mixer is designed for use in cordless telephones, cellular telephones, pagers and lowpower receivers operating at frequencies up to 1GHz. It


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    SL6442 SL6442 422pF 100nF 3515nH 100nH 950MHz PDF

    NE5230

    Abstract: calculating rectifier circuits MTBF
    Contextual Info: NE5230, SA5230 Product Preview Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


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    NE5230, SA5230 NE5230 NE5230/D calculating rectifier circuits MTBF PDF

    NE5230

    Abstract: S5230 N5230 NE5205 NE5230 equivalent
    Contextual Info: NE5230, SA5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will swing to ground when applying the latter. There is a bias adjusting pin


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    NE5230, SA5230 NE5230 NE5230/D S5230 N5230 NE5205 NE5230 equivalent PDF

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


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    AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A PDF

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


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    AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing PDF

    TDA1575T

    Abstract: RF mixer oscillator 20 mhz Megaxess GVIF frankfurt TDA1575
    Contextual Info: Technical Data TDA1575T M EMegaxess G AGmbH X Deutschland ESS Edition 09/00 Integrated FM Tuner for Radio Receivers Short Description The monolithic bipolar integrated circuit TDA1575T contains all the necessary function units for designing and assembling VHF tuners with the exception of a RF - prestage. The TDA1575T is used above all in car radios and


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    TDA1575T TDA1575T RF mixer oscillator 20 mhz Megaxess GVIF frankfurt TDA1575 PDF

    1RF532

    Abstract: 1RF9532 AN-948A IRF9532 equivalent 948a IRF532 equivalent
    Contextual Info: APPLIC A T IO N NO TE 948A Linear Power Amplifier @ Using Complementary HEXFETs By Peter Wilson Introduction The class A B amplifier described in this application note uses a com­ plementary pair of H EXFET devices as the output stage. This feature offers performance improvements


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    100kHz, 100kHz 47Kft 100kHz 25kHz 1RF532 IRF9532 AN-948A 1RF9532 AN-948A IRF9532 equivalent 948a IRF532 equivalent PDF

    LM1208

    Abstract: N28B
    Contextual Info: October 2001 LM1208 130 MHz/85 MHz RGB Video Amplifier System with Blanking General Description The LM1208 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications. In addition to the three matched video amplifiers, the


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    LM1208 Hz/85 LM1208 N28B PDF

    LM1207AN

    Abstract: differential pair cascode darlington LM1205A LM1205AN LM1207A N28B Q105
    Contextual Info: LM1205A/LM1207A 130 MHz/85 MHz RGB Video Amplifier System with Blanking General Description The LM1205A/LM1207A is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications. In addition to the three matched video amplifiers, the LM1205A/LM1207A contains three gated single


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    LM1205A/LM1207A Hz/85 LM1205A/LM1207A LM1207AN differential pair cascode darlington LM1205A LM1205AN LM1207A N28B Q105 PDF

    double sided pcb layout concern

    Abstract: differential pair cascode darlington LM1208 N28B
    Contextual Info: LM1208 130 MHz/85 MHz RGB Video Amplifier System with Blanking General Description The LM1208 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications. In addition to the three matched video amplifiers, the


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    LM1208 Hz/85 LM1208 double sided pcb layout concern differential pair cascode darlington N28B PDF

    amplifier circuit diagram

    Abstract: HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002
    Contextual Info: Index AN-948 v.Int Linear Power Amplifier Using Complementary HEXFETs (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: A description of the circuit Performance Power supply requirements Set-up and troubleshooting Performance summary


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    AN-948 amplifier circuit diagram HEXFEt Power MOSFET Design Guide hf class AB power amplifier mosfet IRF9530 mosfet circuit diagram common base amplifier circuit designing 60w audio amplifier circuit diagram calculation of transformer earthing resistor AN-948 class AB hf bipolar DIODE IN4002 PDF

    0805CS-080XMBC

    Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2
    Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


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    HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT343) 0805CS-080XMBC HBFP0420 common emitter amplifier circuit designing HBFP-04XX-2 PDF

    PTH hole diameter vs lead resistor

    Abstract: common emitter amplifier circuit designing W105 0805CS-080XMBC HBFP-0405 HBFP0420 HBFP-0420 HBPF-0405 common base amplifier circuit designing
    Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface


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    HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 PTH hole diameter vs lead resistor common emitter amplifier circuit designing W105 0805CS-080XMBC HBPF-0405 common base amplifier circuit designing PDF

    PTH hole diameter vs lead resistor

    Abstract: HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2
    Contextual Info: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


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    HBFP-0405 HBFP-0420 SC-70 OT343) PTH hole diameter vs lead resistor HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2 PDF

    NE5230 equivalent

    Abstract: NE5230 NE5205 SE5230 s5230 NE5230DG NE5230N SA5230 SA5230N s5230 phone
    Contextual Info: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


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    NE5230, SA5230, SE5230 NE5230 NE5230/D NE5230 equivalent NE5205 SE5230 s5230 NE5230DG NE5230N SA5230 SA5230N s5230 phone PDF

    S5230

    Abstract: NE5230 equivalent NE5205 NE5230
    Contextual Info: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


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    NE5230, SA5230, SE5230 NE5230 NE5230/D S5230 NE5230 equivalent NE5205 PDF

    S5230

    Abstract: NE5205 NE5230 NE5230D NE5230N SA5230 SA5230N SE5230 NE5230NG
    Contextual Info: NE5230, SA5230, SE5230 Low Voltage Operational Amplifier The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will


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    NE5230, SA5230, SE5230 NE5230 NE5230/D S5230 NE5205 NE5230D NE5230N SA5230 SA5230N SE5230 NE5230NG PDF