CMOS V10 Search Results

PEEL programming

Abstract: 22CV10Z-25 22CV10 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10
Contextual Info: PEEL 22GV10 Z A M SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device i February 1993 Features General Description Advanced CMOS EEPROM Technology High Performance with Low Power Consumption The AMI PEEL22C V10(Z) is a CMOS Program m able

AB244A

Abstract: R488A AD9361 AK2177 CMOS-9HD UPD65891 N526A PD65891 tqfp 64 thermal resistance nec PD65881
Contextual Info: Design Manual CMOS Gate Array, Embedded Array Package Ver. 4.0 Target Series CMOS-N5 Series CMOS-9HD Series CMOS-10HD Series EA-9HD Series Document No. A16400EJ4V0DM00 4th edition Date Published December 2004 NS CP(N) NEC Electronics Corporation 2002

hpcl 7721

Abstract: 82c250 Application Note
Contextual Info: 40 ns Propagation Delay, CMOS Optocoupler HCPL-7720 HCPL-7721 HCPL-0720 HCPL-0721 Features Basic building blocks of the HCPL-772X/072X are a CMOS LED driver IC, a high speed LED and a CMOS detector IC. A CMOS logic input signal controls the LED driver IC which supplies current to the LED. The

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

U256D

Abstract: KM62V2560
Contextual Info: KM62V256P, KM62U256D Family CMOS SRAM 32Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology :0.4jun CMOS • Organization : 32Kx8 • Power Supply Voltage KM62V2560 family : 3.3V±D.3V KM62U256D family : 3.0V±0,3V

Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.7|im CMOS • Organization : 32Kx8 • Power Supply Voltage KM62V256C family : 3.3V±0.3V KM62U256C family : 3.0V±0.3V

ir1253

Abstract: 74hc273 ov534 cd401068 74hct273 AN6525 Harris CMOS Integrated Circuits cd401106 AN7323 CV7030
Contextual Info: _ _ _ _ _ CMOS LOGIC ICS- 1 PRODUCT SELECTION GUIDE GENERAL INFORMATION 1 LOGIC ORDERING INFORMATION. 1-3 HC/HCT High Speed CMOS Nomenclature.

a15#016

Abstract: PT15D RSC11 5T48
Contextual Info: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 |jm CMOS technology

100NSL

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6 im CMOS • Organization : 128K x8 • Power Supply Voltage : KM68V1000B family : 3.3V±0.3V KM68U1000B family : 3.0V±0.3V

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

KM68U4000CL-L

Abstract: 3A3103
Contextual Info: Advance KM68V4000C, KM68U4000C Family CMOS SRAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.35|jm CMOS • Organization : 512Kx8 • Power Supply Voltage KM68V4000C Family : 3.3±Q.3V KM68U4000C Family : 3.0±0.3V

Contextual Info: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 pm CMOS technology

7191B

Contextual Info: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V

27c32

Abstract: 27c32 eprom EPROM 27C32 27cp128 eprom 27c64 PROGRAMMER CIRCUIT NMC27C512 national semiconductor 27c32 27C64 27C16H 27C32B
Contextual Info: National Semiconductor Application Note 472 Merrill Johnson March 1987 INTRODUCTION National Semiconductor is a broad-based supplier of low power CMOS EPROMs CMOS EPROMs are programmed the same way NMOS EPROMs are programmed CMOS and NMOS EPROMs are pin compatible in programming

PL1A

Abstract: PLC water heater plc pin diagram 25032 PT15D b9 39a data sheet PL1C PT8C OR2C12A OR2T15B OR2T40B
Contextual Info: Data Sheet January 2003 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology

124 nl

Abstract: 485G 948F A114 A115 C101 JESD22 NLAST44599
Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual–independent DPDT double pole–double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high–speed propagation delays and low ON resistances while maintaining CMOS low–power

NLAST44599

Abstract: 485G 948F A114 A115 C101 JESD22
Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual–independent DPDT double pole–double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high–speed propagation delays and low ON resistances while maintaining CMOS low–power

OR2C06A3T144I-DB

Abstract: OR2C08A3S208I b9 39a data sheet PL1C PT10c OR2C06A OR2C12A OR2T15B OR2T40B R11C5
Contextual Info: Data Sheet October 2003 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology

Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual–independent DPDT double pole–double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high–speed propagation delays and low ON resistances while maintaining CMOS low–power

485G

Abstract: 948F A114 A115 C101 JESD22 NLAST44599
Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual–independent DPDT double pole–double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high–speed propagation delays and low ON resistances while maintaining CMOS low–power

diode we

Abstract: 19-217/Y5C-AP1Q2/3T analog devices marking Analog devices marking Information MAXIMUM ANALOG SWITCH DPDT NLAST44599 485G 948F A114 A115
Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual−independent DPDT double pole−double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power

555C

Abstract: NLAST9431 NLAST9431MTR2G WQFN16 WQFN-16
Contextual Info: NLAST9431 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST9431 is an advanced CMOS dual−independent DPDT double pole−double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power

PT15D

Abstract: OR2T40A-6PS208I R4C18
Contextual Info: Data Sheet August 2002 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology

Contextual Info: NLAST44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST44599 is an advanced CMOS dual−independent DPDT double pole−double throw analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power