CMOS STACKED RF Search Results

K4S510732E

Abstract: RA12 54pin TSOP SDRAM
Contextual Info: SDRAM stacked 512Mb E-die x4, x8 CMOS SDRAM stacked 512Mb E-die SDRAM Specification Revision 1.0 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 February 2004 SDRAM stacked 512Mb E-die (x4, x8)

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

RA12

Contextual Info: Preliminary CMOS SDRAM K4S510632B Stacked 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 March 2001 * Samsung Electronics reserves the right to change products or specification without Rev. 0.1 Mar.2001 K4S510632B Preliminary CMOS SDRAM

K4S1G0632M-TC1H

Contextual Info: K4S1G0632M CMOS SDRAM Stacked 1Gbit SDRAM 64M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec.2001 K4S1G0632M CMOS SDRAM Revision History

K4S510632D-TC/L75

Abstract: RA12 K4S510632D 875mil CMOS SDRAM
Contextual Info: K4S510632D CMOS SDRAM Stacked 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Apr. 2002 Rev.0.0 Apr. 2002 K4S510632D CMOS SDRAM Revision History Revision 0.0 Apr., 2002 Rev.0.0 Apr. 2002 K4S510632D CMOS SDRAM 32M x 4Bit x 4 Banks Synchronous DRAM

4bit Dynamic RAM

Abstract: K4S510632C RA12
Contextual Info: K4S510632C CMOS SDRAM Stacked 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without Rev.0.1 Sept.2001 K4S510632C CMOS SDRAM Revision History Revision 0.0 Mar., 2001

PL127J

Abstract: Pl064j PL032J S71PL064JA0BAW0B S71PL064JA0 S71PL064JA0BAW07 S71PL064JA0BFW07 S71PL064JA0BFW0B mcp79
Contextual Info: S71PL064JA0 Stacked Multi-Chip MCP Flash Memory and pSRAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Flash Memory and 16 Megabit (1M x 16-bit) CMOS Pseudo Static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS MCP Features „ Cycling endurance: 1 million cycles per sector

71WS512ND

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics

Contextual Info: EN71NS032A0 EN71NS032A0 Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features

S29WS128N

Abstract: sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N S70WS512N00 TSB084 sample code write buffer spansion SA047-SA050
Contextual Info: S70WS512N00 Based MCPs Same-Die Stacked Multi-Chip Product MCP 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

SPANSION gl512

Abstract: GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n
Contextual Info: S71GL512NB0/S71GL256NB0/ S71GL128NB0 Stacked Multi-chip Product MCP 512/256/128 Megabit (32/16/8 M x 16-bit) CMOS 3.0 Volt-only MirrorBitTM Page-mode Flash Memory with 32 Megabit (2M x 16-bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics MCP Features

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

Contextual Info: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features

NS032J

Abstract: S29NS032J S29NS-J S71NS032JA0 S71NS-J S71NS032JA0BHW6Y
Contextual Info: S71NS-J Stacked Multi-Chip Product MCP 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory with pSRAM S71NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: EN71NS128B0 EN71NS128B0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features

S30ML01GP

Abstract: S30ML512P S29PL127N S29PL-N S30ML-P S75PL127NBF S75PL-N S30ML01 tray matrix bga
Contextual Info: S75PL-N MirrorBit ORNAND™ MCPs Stacked Multi-Chip Product MCP S29PL-N: CMOS 3.0 Volt-only Simultaneous Read/Write, Page-mode Flash Memory (NOR Interface) S30ML-P: ORNAND Flash (NAND Interface) 3V pSRAM S75PL-N MirrorBit™ ORNAND™ MCPs Cover Sheet

S29PL129J

Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

S29NS032J

Abstract: S29NS-J S71NS032J80 S71NS032JA0 S71NS-J
Contextual Info: S71NS-J Stacked Multi-Chip Product MCP 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory with pSRAM S71NS-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

Contextual Info: S71NS-J Stacked Multi-Chip Product MCP 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory with pSRAM S71NS-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

4a2g

Abstract: L8212 S71WS-J
Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

Contextual Info: S72WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE Distinctive Characteristics