CMOS DRAM 8M X 16 Search Results

K4S280432C

Abstract: K4S280432D
Contextual Info: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280432D CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM

K4S280432M

Contextual Info: K4S280432M CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432M CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM

SL32

Abstract: SL32S6C8M4E-A60C
Contextual Info: SL32 S/T 6C8M4E-A60C 8M X 32 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL32(S/T)6C8M4E-A60C is a 8M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of four CMOS 4M x 16 bit 3.3V DRAM

cmos dram 8m x 16

Abstract: SL36S6C8M4F-A60C SL36T6C8M4F-A60C
Contextual Info: SL36 T/S 6C8M4F-A60C 8M X 36 Bits DRAM SIMM with EDO and Optimized for ECC FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL36(T/S)6C8M4F-A60C is a 8M x 36 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of four CMOS 4M x 16 bit 3.3V DRAM

565 pin diagram

Abstract: SL32 SL32S6C8M4A-A60C SL32T6C8M4A-A60C
Contextual Info: SL32 S/T 6C8M4A-A60C 8M X 32 Bits DRAM 72-Pin SIMM with Fast Page Mode FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SL32(S/T)6C8M4A-A60C is a 8M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). The module consists of four CMOS 4M x 16 bit 3.3V DRAM components in

HYM53

Contextual Info: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

Contextual Info: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted

Contextual Info: •HYUNDAI 532810A HYM 8M X M-Series 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit R et page mods CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted

hym536810

Abstract: HYM53
Contextual Info: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.

Contextual Info: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are

Contextual Info: •HYUNDAI HYM532814A M -Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.IjjF and 0.01 nF decoupling capacitors are

Contextual Info: •HYUNDAI HYM536A814A M-Series 8M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814A is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 |xF decoupling capacitors are mounted

Contextual Info: STI648104G1-70VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648104G1-70VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI648104G1-70VG consist of eight CMOS 8M x

T4312816B

Contextual Info: tm TE CH T4312816B SDRAM 2M x 16bit x 4Banks Synchronous DRAM 8M x 16 SDRAM FEATURES GRNERAL DESCRIPTION • The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a

VG36648041DT

Abstract: VS1664648041D VS864648041D
Contextual Info: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4

Contextual Info: “H Y U N D A I HYM 532814A M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ¡aF decoupling capacitors are

Contextual Info: HY57V121620 L T 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16.

jeida dram 88 pin

Abstract: STI368000C2
Contextual Info: STI368000C2 88-PIN CARDS 8M X 36 DRAM Cards FEATURES GENERAL DESCRIPTION • The Simple Technology STI368000C2 is a 8M bit x 36 Dynamic RAM high density memory card. The Simple^ Technology STI368000C2 consist of sixteen CMOS 4M x 4 tits DRAMs in 24-pin SOJ package and eight CMOS 4M x 1 bi: DRAMs in a

K4S511632M

Contextual Info: Preliminary CMOS SDRAM K4S511632M 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S511632M Preliminary CMOS SDRAM

HY57V28420AT-H

Contextual Info: HY57V28420A 4Banks x 8M x 4bits Synchronous DRAM DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.

Contextual Info: STI328100D1 -xxVG 72-PIN SO-DIMMS 8M X 32 DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI328100D1 is a 8M x 32 bits Dynamic RAM high density memory module. The Simple Technology STI328100D1 consist of four CMOS 8M x 8 bits DRAMs in 34pin TSOP package mounted on a 72-pin glass epoxy substrate.

4m dram 72-pin simm 32

Contextual Info: SM540084002E3SX/4E3SX February 1996 Rev 0 SMART Modular Technologies SM540084002E3SX/4E3SX 32MByte 8M x 40 CMOS DRAM Module - (5.0V, ECC) General Description Features The SM540084002E3SX/4E3SX is a high performance, 32-megabyte dynamic RAM module organized as 8M

SL32D6C8M4E-A50V

Abstract: SL32D6C8M4E-A60V
Contextual Info: SL32D6C8M4E-AxxV 8M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D6C8M4E-AxxV is a 8M x 32 bits Dynamic RAM memory module. The module consists of four CMOS 4M x 16 bits DRAMs in 50-pin 400-mil TSOP-II packages mounted

Contextual Info: STI648100G1 -xxVG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648100G1 is a 8M x 6^- bits Dynamic RAM high density memory module. The Simple Technology STI648100G1 consist of eight CMOS 8M x 8 bits DRAMs in 32pin TSOP packages, and one 256 bits x 8 bits serial EEPROM