CMOS DRAM 8M X 16 Search Results

K4S280432B

Contextual Info: K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432B CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM

K4S280432A

Contextual Info: K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432A CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM

K4S560832A

Abstract: RA12
Contextual Info: K4S560832A CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S560832A CMOS SDRAM 8M x 8Bit x 4 Banks Synchronous DRAM

K4S280432C

Abstract: K4S280432D
Contextual Info: K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280432D CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM

K4S280432M

Contextual Info: K4S280432M CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432M CMOS SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM

SL32

Abstract: SL32S6C8M4E-A60C
Contextual Info: SL32 S/T 6C8M4E-A60C 8M X 32 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL32(S/T)6C8M4E-A60C is a 8M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of four CMOS 4M x 16 bit 3.3V DRAM

cmos dram 8m x 16

Abstract: SL36S6C8M4F-A60C SL36T6C8M4F-A60C
Contextual Info: SL36 T/S 6C8M4F-A60C 8M X 36 Bits DRAM SIMM with EDO and Optimized for ECC FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SiliconTech SL36(T/S)6C8M4F-A60C is a 8M x 36 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). This module consists of four CMOS 4M x 16 bit 3.3V DRAM

Contextual Info: •HYUNDAI HYM532814A M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 5328104Ais a 8M x 32-bit EDO mode CMOS DRAM m odule consisting of sixteen HY5117404Ain 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jj.F and 0.01

565 pin diagram

Abstract: SL32 SL32S6C8M4A-A60C SL32T6C8M4A-A60C
Contextual Info: SL32 S/T 6C8M4A-A60C 8M X 32 Bits DRAM 72-Pin SIMM with Fast Page Mode FEATURES • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC The SL32(S/T)6C8M4A-A60C is a 8M x 32 bit Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). The module consists of four CMOS 4M x 16 bit 3.3V DRAM components in

Contextual Info: “HYUNDAI HYM536A810A M-Series 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM m odule consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is m ounted tor each

HYM53

Contextual Info: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each

Contextual Info: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted

Contextual Info: •HYUNDAI 532810A HYM 8M X M-Series 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit R et page mods CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted

Contextual Info: •HYUNDAI HYM536810A M-Series 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53681OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOP1I and eight HY514100Ain 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit

HYM5328104B

Abstract: HYM532814B HYM532810 HYM532814
Contextual Info: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are

Contextual Info: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are

Contextual Info: •HYUNDAI HYM532814A M -Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.IjjF and 0.01 nF decoupling capacitors are

Contextual Info: •HYUNDAI HYM536A814A M-Series 8M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814A is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 |xF decoupling capacitors are mounted

Contextual Info: STI648104G1-70VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648104G1-70VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI648104G1-70VG consist of eight CMOS 8M x

Contextual Info: •«HYUNDAI HYM536A814A M-Series 8M x 36-bit CMOS DRAM MODULE with EXTENDED DATAOUT DESCRIPTION The HYM536A814A is a 8M x 36-bit EDO mode CMOS DRAM m odule consisting of eighteen HY5117404A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 aF and 0.01 |aF decoupling capacitors are mounted

T4312816B

Contextual Info: tm TE CH T4312816B SDRAM 2M x 16bit x 4Banks Synchronous DRAM 8M x 16 SDRAM FEATURES GRNERAL DESCRIPTION • The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a

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Contextual Info: » « Y U N D fll • HYM5V64804 Z-Series SO DIMM 8M*64 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, 4K/8K-Refresh DESCRIPTION The HYM5V64804 is a 8M x 64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8 TSOP and one 2048-bit EEPROM on a 144 pin giass-epoxy printed circuit board. 0.1

STI408004-60T

Abstract: simm 72 pinout DQ28-31
Contextual Info: STI408004-60T 8M X 40 Bits DRAM SIMM with ECC and EDO FEATURES • GENERAL DESCRIPTION Performance range: tRC tRAC tCAC This product is a 8M x 40 bits Dynamic RAM DRAM Single Inline Memory Module (SIMM). This module consists of twenty CMOS 4M x 4 bits DRAMs in 24-pin SOJ packages mounted

Contextual Info: - HY U N D A I HYM536A814B M-Series 8M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^Fdecoupling capacitors are mounted