CMLD2004 Search Results

CMLD2004

Abstract: CMLD2004A CMLD2004C CMLD2004DO CMLD2004S marking code 18 surface mount diode
Contextual Info: CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar

Contextual Info: CMLD2004G SURFACE MOUNT SILICON DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004G contains two 2 isolated high voltage silicon switching diodes, manufactured by the epitaxial planar process,

Contextual Info: CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 series contains two 2 silicon high voltage switching diodes,

Contextual Info: CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar

CMLD2004

Abstract: CMLD2004A CMLD2004C CMLD2004DO CMLD2004S R3 marking code
Contextual Info: CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial

CMOD2004

Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

C 704 diode

Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

3SMC30A

Abstract: CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B
Contextual Info: Diodes Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless Package Bottom View

CMOD2004

Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

1N3070

Abstract: DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: Central TM Semiconductor Corp. PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å

CMR1U-02M

Abstract: CMSD4448 CMSH3-40 CMPZ4124 CMSH3-100 CXTA27 TR em 328 SO3903 BST60 CMPZ4614
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M 1N6484 CMR1-10M 1S2835 CMPD2836