CM32B Search Results

GRH111

Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

CM32B

Abstract: CM55B CM48A CM60MB CM60A CM35A
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 C h ic a g o M in ia tu r e 708-459-3400 Fax 708-459-2708 WHERE INNOVATION COMES TO LIGHT T-2 T e le p h o n e S lid e B a s e - Pari Number I loi Type 3 Design Voltage continued Amps End Foot Candles Life Hours Filament

CM120PS

Abstract: CM60MB
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459*3400 Fax 708-459-2708 _ C h ic a g o M iniature WHERE INNOVATION COMES TO LIGHT T-2 Wire T e r m in a l short} Part Number ¡'*| («Bai ! _ MAX. . . Design Voltage Amps End Foot Candles Life

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFS48V2527

Abstract: 1348 c23 s 1348 c23
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFS48V2527

Abstract: GF-47
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

GR111

Abstract: MGFS48V2527 60W POWER AMPLIFIER CIRCUIT
Contextual Info: M ITS U BIS H I S E M IC O N D U C TO R <G aA s FET> Preliminary MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

ROHM MCR03

Abstract: MCR03 tr1a 5124V BD9560MUV VQFN032V5050 VDAC-300mV dac1287 MCH183CN22 MCH185C
Contextual Info: Hi-performance Regulator IC Series for PCs Switching Regulator Controller for Graphic Chip Cores No.09030EBT10 BD9560MUV ●Description BD9560MUV is a switching regulator controller with high output current which can achieve low output voltage 0.412V～ 1.2875V from a wide input voltage range (4.5V～25V). The setting of output voltage depends on DAC built in. High

GMR18

Abstract: 1017V mcr03 tr1a 5124V RESISTOR ROHM R20 BD9560MUV VQFN032V5050 transistor mark code hg data GMR21
Contextual Info: High performance Regulators for PCs Switching Regulator Controller for Graphic Chip Cores BD9560MUV No.10030ECT10 ●Description BD9560MUV is a switching regulator controller with high output current which can achieve low output voltage 0.412V ~ 1.2875V from a wide input voltage range (4.5V ~ 25V). The setting of output voltage depends on DAC built in. High

74LS80

Abstract: 74LS198 74LS150 74LS94 OAI32 74LS179 TTL 74LS198 MUX21H TTL 74ls138 to 7 segment 7476 3 bit ripple counter
Contextual Info: 4flE ]> • 77MLjbciO 0001L3M 4bO « P C H T- °J EK-044-9004 CMOS Gate Array 5GV Series RICOH CORP/ ELECTRONIC The RICOH gate array 5GV series complies with the CMOS 1.5ju rule, and offers high speed operation with a gate delay time of 1.0 ns. The 5GV series inherits the rich library of 5GF gate array series. The cell library is compatible with

16 bit comparator using 74*85 IC

Abstract: 74LSI39 74LS80 shift register 74ls96 4 bit synchronous ic 7476 74ls150 74LS94 74ls91 counter OAI211 74ls179
Contextual Info: EKG-3-8805 CMOS Gate Array 5GF Series • O u tlin e T he R icoh gate a rray 5GF series com plies w ith th e CMOS 1.5 m rule, and o ffe rs high speed o p e ra tio n w ith a gate delay tim e o f 1.0 ns. T he 5G F series in h e rits th e rich lib ra ry o f th e 5GH series, and th e S R A M and mask RO M can be used