CM1200H Search Results

CM1200HCB-34N

Abstract: TRANSISTOR JC 515 transistor 2955
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V

Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………

CM1200HA-24J

Contextual Info: CM1200HA-24J Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Powerex IGBTMOD™ Modules

CM1200HA-66H

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1200HA-66H 大電力スイッチング用 絶縁形 HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM1200HA-66H ¡IC …………………………………………… 1200A ¡VCES ……………………………………… 3300V

Switching

Abstract: "Bipolar Transistor" CM1200HC-66H
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25°C

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V

Contextual Info: < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-90R       IC •······························································· 1200A

SGCT

Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H

tip 416 transistor

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H *w '£e'pa,an' '1'0 soW HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

CM1200HB-66H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

CM1200HA-34H

Abstract: circuit diagram induction heating
Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

CM1200HA-34H

Abstract: transistor su 312
Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HA-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

CM1200HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HB-50H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

CM1200HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-50H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules

CM1200HB-66H

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM1200HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE

CM1200HC-66H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V

CM1200HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HB-50H ● IC . 1200A ● VCES . 2500V

CM1200HA-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HA-34H ● IC . 1200A ● VCES . 1700V

CM1200HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V

Contextual Info: < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-90R       IC •······························································· 1200A

CM1200HA-24J

Abstract: fast recovery diode 600v 1200A
Contextual Info: mrarar CM1200HA-24J Powerex, Inc., 200 Hilhs Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

GE2 TRANSISTOR

Abstract: Transistor BSX 95 CM1200HA-24H
Contextual Info: m M BSX CM1200HA-24H Tentative Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

CM1200HA-50H

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1200HA-50H 大電力スイッチング用 絶縁形 HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM1200HA-50H ¡IC …………………………………………… 1200A ¡VCES ……………………………………… 2500V