CM 15 F 12 H Search Results

Contextual Info: HA-2510/12/15 SI h a f r r i s High Slew Rate Operational Amplifiers tn CM in CM Features Applications • High Slew • Data Acquisition Systems • Fast S e ttlin g . 250ns

225WB

Abstract: VSWR Bridge top vinyl plate
Contextual Info: 225WB BOOMER 220-225 MHz YAGI cushcroft C O R P O R A T I O N 951347 11/87 FIGURE 1 (104.8cm ) — 4 1% *— JL 38 BB — f  p ELEMENT #11 ELEI BA ELEM i TELESCOPE CLAMP (411) 15 14 -1 0 % ’ - H (27.0 cm ) 12 13 10H ' (27.0 cm ) 10H '~ (27.0 cm ) 10

Contextual Info: 30' // Fo f o 6 -H -H ro o ò -H IO in CO ò CN REF IO ö o -H CM O -H CM ro ó CM 0O .75±O .15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 O 0 ooo ooo o ooooo O O ooo ooo Q O O O O O O O o o o o o o 900000 o oooo o o o oo o o o oo o o o oo - -e-e-e o o oo o •

MP7623

Contextual Info: MP7623 15 V CM OS M ultiplying 12-Bit D igital-to-Analog C onverter FEATURES • Pi n C o m p a t i b l e wi t h M P 7 5 4 1 • Low • 12-Bit Linearity • L o w Gli tch E n e r g y • F o u r Q u a d r a n t Multiplication • TTL/CM O S Compatible •

16v8z

Contextual Info: F IN A L C O M ’L : -15/25 a IN D : -12/15/25 PALCE16V8Z FAMILY Advanced Micro Devices Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Z ero-Pow er CM O S technology ■ Direct plug-in replacem ent for the PAL16R8

ALC201

Abstract: 333Q CY7C269
Contextual Info: CY7C269 CYPRESS SEMICONDUCTOR • CM OS for optimum speed/power • High speed commercial and military — 15-ns max set-up — 12-ns clock to output On-chip diagnostic shift register — For serial observability and con­ trollability o f the output register

Contextual Info: 16 15 14 13 12 1 1 10 9 8 7 6 5 4 3 2 1 DRAWING NUMBER ? * REVISION ? ? SHEET ? * APPROVAL LEVEL ? 1/1 * DRAWING 99 M M L L COVER & PINHEADER PRE-ASSEMBLED STATE H H CM G 1% SHRANKAGE ALLOWED F F NOTES N1 N 2) N 3) N 4) N 5) GENERAL TOLERANCE : ± 0 .2

CD4060B

Contextual Info: CD4060B Types CM O S 14-Stage RippleCarry Binary Counter/Divider and Oscillator 14-STAGE R IP P LE COUNTER *<£>-*— High-Voltage Types 2 0 -V o lt Rating ANO OSCILLATOR Features: m 12 M H z clock rate at 15 V The R CA-CD4060B consists o f an oscillator

3650VC

Abstract: 16HB
Contextual Info: VR. DECREASE VOLUlfKO - 15dB U nit: m m T o leran ce: ± 0 .5 m m 19.5 S.P.L dB I(mA) 14 12 at 30 cm 10 B 6 4 2 title 9 12 15 18 21 24 28 (VDC) O scillating F requency (KHz) O perating Voltage (VDC) C u rren t C onsum ption a t 12 VDC (mA) Sound P ressu re Level

eszo

Abstract: jae mx
Contextual Info: 2 ES^ZOI PS ‘ON Q N I M V d Q ^ « ^ 3 2 2 1.9 K - =H !< 2 1.3 — >1 4.3 3 . 5 a > APPLICABLE P.C.B. D I ME N S I 0 N ( R E F . ) THICKNESS t = 1 . 5 ±D- 15 ( S C A L E 2: 1) t = 1 . 6 ± 0 ‘ 15 12 <— O • o 1/1 m CM \r m v 2 1.5

EER-42

Abstract: EER42 EER-4242 BEER-42 20-1112CP
Contextual Info: A i 1 B - 47 _ _r l_ a may & H G F D C i .i. m 2 3 © \ pj <D 4 5 6 7 fm OT © f= WS# @ 5 H O M 8 9 d> 1.0 CPW j. & Sé tt » g & firn % L 11 12 13 14 15 16 & a it f± 100 mmum M cm ± AC 1 M DC 5 00V 17 jy y w y T . ~ J mrntm jj v h t'y mm.% i 19 20 21

Contextual Info: J 8 L. i_ g i 10 i 11_ i 12 i 13 i 14 i 15 i 16 i 17 i RoHS v jy Compliant Capable 2002/95/EC Ev 1 J _ J- 8.00 9.00 Detail a 12 .5 ± 0 .4 0 Q_ v -ir T f -5 : to ] r 1 .0 0 Í0 .0 5 1 .8 0± 0 .1 5 0 .2 5 Í0 .0 5 CM [T] NOTES:

Z429

Abstract: BFW12
Contextual Info: molaic 128Kx 32 F LA SH Module PUMA 2F4001-12/15/20 /X0255 Issue 1.1: March 1994 M osaic S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION Inc. / 4,194,304 bit CM O S FLASH Memory Features 1 Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.

ERNI RC2

Contextual Info: Datum Anforderungsstufe /date p s n class if ERNI lift \ RC 2 [ k 1 UU f CM o + l b 2.54 b 2.54 Bestiickungsplan / contact layout TauchLataschlud 0,65 x 0,3 mm / solder terminal 0.65 x 0.3 mm Isolierwerkstoff / housing material 32 31 30 29 28 27 26 25 24 23 22 21 2019 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1

Contextual Info: 1. M e c h a n ic a l D im e n s io n a : A B 0.145 0 . 12 0 o - I in CM . • IE D 0.023+0.01 5 0.1 15 I— 0.050 135* Max I D‘ Min S t r ip L e n g th 0.065 0.1 65 S uggeste d Pad Layout DOC REV: A / 2 PROPRIETARY D ocum ent is the p roperty o f XFMRS Group & is

Contextual Info: CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY FU JITSU MBM2 7 C5 12 -15 MBM2 7 C5 1 2-1 7 O ctob er 1987 E d itio n 1.0 CMOS 524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY T h e F u jits u M B M 2 7 C 5 1 2 is a high speed 5 2 4 ,2 8 8 b it s ta tic CM O S erasable

Contextual Info: MP7541B 15 V CM OS M ultiplying 12-Bit D igital-to-Analog C onverter FEATURES APPLICATIONS • ESD Protection: 2000 V M inimum • Industrial A u to m atio n • Ful l F o u r Q u a d r a n t M u l t i p l i c a t i o n • A u t o m at i c T es t E q u i p m en t

84256-10

Abstract: 84256 84256-10 LL 84256-15 84256-12 FPT2 ic 84256 A
Contextual Info: F U JIT S U CMOS 262144-BIT STATIC RANDOM ACCESS MEMORY MB 84256-10 10L10LL MB 84256-12 12L12LL MB 84256-15/15L/15LL August 1986 Edition 2.0 256K-BIT 32,768 x 8 CM OS STA T IC R AN D O M ACCESS M E M O R Y WITH D A T A R ET EN T IO N A N D LOW POWER T h e F u jits u M B 8 4 2 5 6 is a 3 2 ,7 6 8 -w o rd b y 8 -b it sta tic ra n d o m access m e m ­

Contextual Info: A VIEW C O NT A CT S ON M ATING SID E CO c r 13 14 15 ro 12 CM 10 A A A A A A A A A A A A A A A A 7 <E 5 A A A A A A A A A A A A A A A A 6 m - 32 2 A CD L=4,5 □ D M a r k in g S ta n d a rd P e rfo rm a n c e G I/O = C o n f a c f a r e a Flux p r o o f

Contextual Info: A VIEW CONTACTS ON MATING SID E cr 12 13 14 15 CO 10 A A A A A A A A A A A A A A A A 7 <E 5 A A A A A A A A A A A A A A A A 6 m CM CO 32 2 A CD L=2,S □ D M ark ing Standard P e r f o r m a n c e level G3/0 = C o n f a c t a r e a level 3 / T e rm in a tio n tin

MB81C258-12

Contextual Info: 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 O ctob er 1988 E d itio n 3.0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM T he F u jits u M B 8 1 C 2 5 8 is CM O S s ta tic c o lu m n d y n a m ic random access m e m o ­ ry , S C -D R A M , w h ic h is organized as 2 6 2 1 4 4 w o rd b y 1 b it. T his S C -D R A M is

Contextual Info: PRELIMINARY COM’L: -7/10/12/15 IND: -10/12/15/20 The MACH5-512/MACH5LV-512 AMD£I M A C H 5 -5 1 2 /1 2 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 6 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 8 4 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /

Contextual Info: FINAL CO M 'Li-7/10/12/15 IND:-10/12/15/20 MACH5-512/MACH5LV-512 V A N T I S COMP ANY M A C H 5 -5 1 2/1 2 0 -7 /1 0/1 2/1 5 M A C H 5 -5 1 2/160-7/10/12/1 5 M A C H 5 -5 1 2/184-7/10/12/1 5 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 M A C H 5 -5 1 2/256-7/10/12/1 5

marking r2k

Abstract: CM252016-1ROK CM3220 322522-121k 201212-82NK
Contextual Info: Features Applications • High resistance to heat and hum idity ■ Mobilphone ■ Resistance to m echanical shock and pressure ■ Cellularphone ■ CTV, V C R , HIC, FDD ■ Accurate dim ensions for automatic surface mounting ■ Wide inductance range 1 .5nH to IOOOu H