CLT4 Search Results

Transistor 3TY

Abstract: CLED400 CLT4140 CLT4150 CLT4160
Contextual Info: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed

inverter transformer

Abstract: lcd inverter ccfl transformer CLT4123 LCD inverter transformer ccfl transformer CLTP4123 CCFL BACKLIGHT INVERTER RoHS CTL4123 DC36V
Contextual Info: Max. 8W, Medium & Large size LCD Monitors and vehicle applications 中型&大型液晶显示器 最大8W 和车载设备用液晶显示器 TYPE CLT4123 CLT4123 (Unit: mm) Description • Surface mount inverter transformer for CCFL driving. • Suitable as an inverter transformer for LCD backlight.

660nm 250mw

Abstract: CLE435 CLT435
Contextual Info: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.060 (1.52)

Contextual Info: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max

CLED400

Abstract: CLT4140 CLT4150 CLT4160 CLT400
Contextual Info: CLAIREX ELECTRONICS DIV ITE D • 21457^ GQ007LG 5 T - ^ l - <ol CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit

Contextual Info: FASCO INDS/ SENISYS 40E D B 34^736 0Q012b8 T B S E N I CLT4Q0_ V "4 H o i Silicon Planar Phototransistor i - i * ; Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storage Temperature. -4CPCtQ+10O“O

LT414

Abstract: LT4140 LT416
Contextual Info: HOE 1> BHT'lTBfi 0001007 H O S E N I FASCO INDS/ SENISYS CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors 4 'l GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit

inverter transformer

Abstract: lcd inverter ccfl transformer CLT4123 CTL4123 CCFL BACKLIGHT INVERTER RoHS ccfl lcd monitor
Contextual Info: 85°C ;.Without.ballast.capacitance./.(85°C)；无镇流电容。 Max. 8W, Medium & Large size LCD Monitors and vehicle applications 最大8W, 中型&大型液晶显示器和汽车用液晶显示器 TYPE CLT4123 CLT4123 (Unit: mm) Description (Unit: mm)

Contextual Info: CLED400 Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared emitting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,

Contextual Info: CLT435 PRELIMINARY DATA NPN Silicon Phototransistor Clairex® Technologies, Incorporated December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensedTO -18 package transistor base is not bonded

CLT4123

Abstract: CTL4123 inverter transformer CCFL BACKLIGHT INVERTER RoHS lcd ballast
Contextual Info: Max. 8W, Medium & Large size LCD Monitors and vehicle applications TYPE CLT4123 大型液晶モニタ（14インチ以上最大6.5W/ch）／車載用液晶モニタ用インバータトランス CLT4123 Unit: mm Description • Surface mount inverter transformer for CCFL driving.

Bvn 10k

Abstract: CLED400 CLR4180 CLT4140 CLT4160
Contextual Info: CLED400 Gallium Arsenide Infrared Em itting Diode GENERAL DESCRIPTION — The CLED400 is a high intensity infrared em itting diode molded in a clear epoxy package. It has a molded lends to provide a controlled angular irradiance pattern. The CLED400 is spectrally compatible with Clairex CLT4140,

double Silicon NPN Phototransistor

Abstract: TO-18 TRANSISTOR glass lens phototransistor led 5mm texas transistor t05 CLE435 CLT435 NPN Silicon Phototransistor
Contextual Info: CLT435 PRELIMINARY DATA Clairex* Technologies, incorporated NPN Silicon Phototransistor December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 transistor base is not bonded

CLED400

Abstract: CLT4140 CLT4150 CLT4160
Contextual Info: 4DE D B 3 4 =^ 73 6 0D Q 1 0 D 7 4 OSENI FASCO INDS/ SE NI SY S CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors G E N E R A L D E SC R IP T IO N — The CLT4000 series are photo tran sisto rs molded in a clear epoxy package. Lead fram e construction allows direct soldering into circuit

660nm 250mw

Abstract: CLE435 CLT435 double Silicon NPN Phototransistor
Contextual Info: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max

Senisys

Abstract: CLT400 CLED400 T00C
Contextual Info: FASCO INDS/ SE NI SY S 40E D 3 4 cH 7 3 ô 00012fc>0 T ISISENI iCEEaasae CLT400 Silicon Planar Phototransistor Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. Storage Temperature.- W C tq +100“0

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

TIL78

Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

TIL78

Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

Contextual Info: Power Supply ICs for TFT-LCD Panels 5V Input Multi-channel System Power Supply ICs BD8163EFV No.10035EAT13 ●Description The BD8163EFV is a system power supply IC for TFT panels. A 1-chip IC providing a total of four voltages required for TFT panels, i.e., logic voltage, sauce voltage, gate high-level, and gate low-level voltage, thus constructing a TFT panel power

inverter transformer

Abstract: lcd inverter ccfl transformer CCFL BACKLIGHT INVERTER RoHS ccfl lcd monitor CLT4123 CTL4123 LCD inverter transformer
Contextual Info: CCFL Driving Inverter Transformers 冷陰極管駆動用インバータトランス Max. 8W, Medium & Large size LCD Monitors and vehicle applications 大型液晶モニタ（14インチ以上最大8W）／車載用液晶モニタ用インバータトランス

Contextual Info: Power Supply ICs for TFT-LCD Panels 5V Input Multi-channel System Power Supply ICs No.10035EAT13 BD8163EFV ●Description The BD8163EFV is a system power supply IC for TFT panels. A 1-chip IC providing a total of four voltages required for TFT panels, i.e., logic voltage, sauce voltage, gate high-level, and gate low-level voltage, thus constructing a TFT panel power

sanyo ni-cd

Abstract: gigaset KX-T3611 ASCOM 6000 KX-T4330 KX-T4060 KX-T4300 audiovox bt 2012 gigaset 2015
Contextual Info: Model Number Chemical System Voltage Capacity mAh Manufacturer Phone Model Number Fameart Battery Ref. CP01 Ni-Cd 2.4 280 Ni-MH 2.4 320 CP02 Ni-Cd 3.6 320 CP02NM Ni-MH 3.6 320 CP03U Ni-Cd 3.6 320 CP03UNM Ni-MH 3.6 320 CP04U Ni-Cd 4.8 320 CP04UNM Ni-MH 4.8