CLASS C TUNED AMPLIFIER Search Results

GRM155R71H102KA01E

Abstract: GRM1555C1H820JZ01D RFPA3800SB GRM155R71H221KA01E GJM1555C1H120JB01E RFPA3800410 LQP15MN2N2B02D cap 18pF 50V 10 0603 X7R RFMD PA LTE RFPA3800
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>49dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

DS110505

Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

MRFA2604

Abstract: data sw 3205 transistor cq 529 class c tuned amplifier
Contextual Info: MOTOROLA O rder this docum ent by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA MRFA2604 The RF Line Broadband R.F. Array for T V TVansmitter 230 W PEAK SYNC. 4 7 0 -8 6 0 MHz CLASS AB RF POWER AMPLIFIER The MRFA2604 is a solid state class AB amplifier specifically designed for TV

920MHz

Abstract: RFMD PA LTE class c tuned amplifier
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

Rogers 4350

Abstract: Rogers 4350 datasheet 500 watt RF amplifier GHz FET GAAS marking a gaas Low Noise Amplifier MMIC code D MGA-545P8-TR1 transistor amplifier 3 ghz 10 watts A004R MGA-545P8
Contextual Info: MGA-545P8 50 MHz to 7 GHz Medium Power Amplifier Data Sheet Description Avago’s MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifier that offers excellent power output at 5.8 GHz. Although optimized for 5.8 GHz applications, the MGA-545P8 is

UMK105cg

Abstract: 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 RFPA3800 500r07 MuRata Electronics Kamaya
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

MRFA2604

Abstract: 84AST30028A
Contextual Info: MOTOROLA Order this document by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transmitter The MRFA2604 is a solid state class AB amplifier specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology

motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
Contextual Info: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and

MRFA 2604

Abstract: siceront kf transistor motorola 351 mrfa2604 470-860 mhz Power amplifier w siceront 84AST30028A w9260 class d amplifier circuit
Contextual Info: MOTOROLA Order this document by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transmitter The MRFA2604 is a solid state class AB amplifier specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology

A1933

Abstract: amplifier 50 50W
Contextual Info: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

MGA-634P8-BLKG

Abstract: mga633p8 MCR01MZS
Contextual Info: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: RFPA2013 RFPA2013Preliminary GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz  0.5W Output Power P1dB  NF = 3.8dB at 2140MHz  Gain = 15.7dB at 2140MHz  Power-down Capability NC 1 RFIN 2 RFIN 3 NC 4 VREF NC VBIAS 14 13 12 NC BIAS CIRCUIT 11 RFOUT/VCC

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

MGA-633P8

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

MGA653

Abstract: QFN PACKAGE Junction to PCB thermal resistance 633p MGA633 643p MGA-643P8
Contextual Info: MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-635P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-635P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

transistor 1800MHz

Contextual Info: RF3826 RF3826 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium

Contextual Info: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=49dBm 880MHz  Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug

EC 401 TRANSISTOR

Abstract: Gan hemt transistor RFMD transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFPA2189 RFPA2189 GaAs HBT POWER AMPLIFIER 0.5W, 400MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 16dBm WCDMA  0.5W Output Power P1dB  Excellent Linearity to DC Power Ratio  NF=3.0dB at 880MHz  Single-Supply 5V Operation 