CLASS C TUNED AMPLIFIER Search Results

lte RF Transceiver 450MHz

Abstract: RFPA3800 RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

GRM155R71H102KA01E

Abstract: GRM1555C1H820JZ01D RFPA3800SB GRM155R71H221KA01E GJM1555C1H120JB01E RFPA3800410 LQP15MN2N2B02D cap 18pF 50V 10 0603 X7R RFMD PA LTE RFPA3800
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>49dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

APT9403

Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
Contextual Info: APT9403 By: Kenneth Dierberger Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Presented at RF Expo East November 1994 Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Kenneth Dierberger Applications Engineering Manager

DS110505

Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

schematic diagram of bluetooth s9

Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind RFMD PA LTE GSM WCDMA repeater circuit 500R07S120GV4TD MuRata Electronics
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

MRFA2604

Abstract: data sw 3205 transistor cq 529 class c tuned amplifier
Contextual Info: MOTOROLA O rder this docum ent by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA MRFA2604 The RF Line Broadband R.F. Array for T V TVansmitter 230 W PEAK SYNC. 4 7 0 -8 6 0 MHz CLASS AB RF POWER AMPLIFIER The MRFA2604 is a solid state class AB amplifier specifically designed for TV

MRFA2604

Abstract: class c tuned amplifier 6928V
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transm itter The M R FA 2604 is a solid state class A B amplifier specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology

amplifier MA-920

Contextual Info: AH125 ½ W High Linearity InGaP HBT Amplifier Applications • Repeaters • Mobile Infrastructure • LTE / WCDMA / EDGE / CDMA 3-pin SOT-89 Package Product Features • • • • • • • • • Functional Block Diagram 400 − 3600 MHz +28 dBm P1dB

920MHz

Abstract: RFMD PA LTE class c tuned amplifier
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

Rogers 4350

Abstract: Rogers 4350 datasheet 500 watt RF amplifier GHz FET GAAS marking a gaas Low Noise Amplifier MMIC code D MGA-545P8-TR1 transistor amplifier 3 ghz 10 watts A004R MGA-545P8
Contextual Info: MGA-545P8 50 MHz to 7 GHz Medium Power Amplifier Data Sheet Description Avago’s MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifier that offers excellent power output at 5.8 GHz. Although optimized for 5.8 GHz applications, the MGA-545P8 is

A004R

Abstract: MGA-545P8 MGA-545P8-BLK MGA-545P8-TR1 MGA-545P8-TR2 MO229 51C MARKING code
Contextual Info: Agilent MGA-545P8 50 MHz to 7 GHz Medium Power Amplifier Data Sheet Description Agilent’s MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifier that offers excellent power output at 5.8 GHz. Although optimized for 5.8 GHz applications,

Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=3.2dB at 945MHz  5V to 7V Operation

UMK105cg

Abstract: 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 RFPA3800 500r07 MuRata Electronics Kamaya
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

A1933

Contextual Info: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

MRFA2604

Abstract: 84AST30028A
Contextual Info: MOTOROLA Order this document by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transmitter The MRFA2604 is a solid state class AB amplifier specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology

motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
Contextual Info: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and

MRFA 2604

Abstract: siceront kf transistor motorola 351 mrfa2604 470-860 mhz Power amplifier w siceront 84AST30028A w9260 class d amplifier circuit
Contextual Info: MOTOROLA Order this document by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2604 Broadband R.F. Array for TV Transmitter The MRFA2604 is a solid state class AB amplifier specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
Contextual Info: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and

RFPA3806TR7

Abstract: trace code marking RFMD EEF-10
Contextual Info: RFPA3806 RFPA3806 GaAs HBT 2STAGE POWER AMPLIFIER GaAs HBT 2-STAGE POWER AMPLIFIER 700MHZ TO 2700 MHZ NC 5 NC 6 700MHz to 2700MHz Operation Applications      GaAs Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure

A1933

Abstract: amplifier 50 50W
Contextual Info: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

RF3934D

Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A
Contextual Info: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged

AH312G

Contextual Info: AH312-1 2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description Functional Diagram The AH312-1 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +49 dBm OIP3 and

RF3932

Abstract: GaN ADS EAR99
Contextual Info: RF3932 60W GaN WIDE-BAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin Features       Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=14dB at 2GHz 48 V Operation Typical Performance