CL 100 HIE HRE HFE Search Results

2SA999

Abstract: Silicon PNP epitaxial cl 100 hie hre hfe
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING ¿5.6M AX frequency voltage amplify application.

BC846A

Abstract: BC846B BC847A BC847B BC847C BC848A BC848B BC848C
Contextual Info: TRANSYS BC846A - BC848C ELECTRONICS NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR LIMITED Features Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications

BC560 equivalent

Abstract: bc556 equivalent bc 147 equivalent bc560 BC557 equivalent bc557 b 011 bc560 noise figure bc546 equivalent bc 147 transistor BG558
Contextual Info: BC556. . . BC560 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. The types BC556 and BC557 are available in groups A and B, however, the types BG558,

2sc3052

Abstract: MARKING HRA MARKING XL
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.

2sa1235

Abstract: ha15090
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unlt mm Mitsubishi 2SA1235 is a super mini silicon PNP epitaxial type transistor designed for low frequency voltage amplify application.

BC559

Abstract: BC557 hie hre hfe cl 100 hie hre hfe
Contextual Info: BC556 THRU BC559 Small Signal Transistors PNP TO-92 FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is avail­

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5213 FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5213 is a resin sealed silicon NPN epitaxial type transistor. It designed with high voltage, high hFE an d high tr.

2SA904A

Abstract: 2SA904 cl 100 hie hre hfe
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA904A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA904A is a silicon PNP epitaxial type high voltage transistor OUTLINE DRAWING Unitrmm ¿5.6MAX designed for low frequency voltage amplify application of small signal. Due to

2SB1462

Abstract: 2SD2216 SC-75
Contextual Info: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-emitter voltage Base open Emitter-base voltage (Collector open)

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05

MEF250

Abstract: 2sa1602 mg 2SA1602
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1602 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1602 is a super mini package resin sealed silicon PNP epitaxial Unit:mm OUTLINE DRAWING 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.

2SB1320A

Abstract: 2SD1991A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es si tf

2SB0642

Abstract: 2SB642
Contextual Info: Transistors 2SB0642 2SB642 Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10

XN02401G

Abstract: 2SB0709A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN02401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • 2SB0709A x 2 Parameter

2SB0709A

Abstract: 2SB709A XN02401 XN2401
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN02401 (XN2401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05

XN1401

Abstract: 2SB0709A 2SB709A XN01401
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01401 (XN1401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Features ue pl d in an c se ed lud pl vi an m m es

2SB0709A

Abstract: XN01401 XN01401G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • 2SB0709A x 2 Parameter

2SB0709A

Abstract: 2SB709A XN06401 XN6401
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05

XP02401

Abstract: 2SB0709A 2SB709A XP2401
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP02401 (XP2401) Silicon PNP epitaxial planar type Unit: mm (0.425) For general amplification 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05 –0.02 1 5˚ ue

2SB0709A

Abstract: XN04401G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in

2SB0709A

Abstract: 2SB709A XP01401 XP1401
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01401 (XP1401) Silicon PNP epitaxial planar type Unit: mm (0.425) For general amplification 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05 –0.02 1 5˚ ue

XN04401

Abstract: 2SB0709A 2SB709A XN4401
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04401 (XN4401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05