CKE00 Search Results

e24526

Abstract: IBM0316169C IBM0316809C
Contextual Info: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM

TI1225

Abstract: GAD16 HA17 MAA8 HA21 JT47 AC18-AC19 HA20
Contextual Info: 2 3 C639 C630 C635 0.1U 0603B 0.1U 0603B 0.1U 0603B 0.1U 0603B GND VCC3 C622 C633 C624 C632 1000P 0603B 1000P 0603B 1000P 0603B 1000P 0603B B 9,20 9,20 9,20 9,20 9,20 9,20 9,20 9,20 9,20 G_GNT# G_REQ# G_PAR G_STOP# G_TRDY# G_IRDY# G_DEVSEL# G_FRAME# G_PIPE#

cke02

Abstract: p31dr c8s26a
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

GHW Connectors

Abstract: TDQ38 BTA60 bta61 bta80 bta11 BTA100 BTA32 bta50 bta81
Contextual Info: Version 1.2 December 1999 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 1999 Integrated Device Technology, Inc. Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

Contextual Info: IBM 13Q 4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • Automatic and controlled Precharge Commands • 4M x 72 Synchronous DRAM DIMM -SDRAM CAS Latency: 2 -Burst Type: Sequential or Interleave

TDQ38

Abstract: LTA201 LTA230 a1633 BTA32 B32315 LTA123 LTA143 LTA150 SDQ57
Contextual Info: 7 8 VCC3.3 SYNCOUT tied to SYNCIN through series resistor. Trace length matched to SYSCLK[0:7]/TITAN_CLK 1,14 1,12,14 6,7,12,13,14 1,12,14 1 16 2 15 3 14 4 13 5 12 6 11 7 10 9 8 S2 1 1 1 1 1 1 1 1 BLK_WR1 BLK_WR0 CLK_FREQ2 CLK_FREQ1 CLK_FREQ0 CLKMULT2 CLKMULT1

fw82443

Abstract: fw82443bx MDR36 mitac 6120 JT53 VSS57 mdr-4 AC18-AC19 HA20
Contextual Info: 1 C103 1000P 0603 +80-20% 2 1 C87 1000P 0603 +80-20% 2 1 C172 1000P 0603 +80-20% 2 2 1 C198 1000P 0603 +80-20% GND C HA#[3.31] 2 HA#[3.31] HA#3 HA#4 HA#5 HA#6 HA#7 HA#8 HA#9 HA#10 HA#11 HA#12 HA#13 HA#14 HA#15 HA#16 HA#17 HA#18 HA#19 HA#20 HA#21 HA#22 HA#23

bta61

Abstract: bta60 TDQ38 GHW Connectors BTA100 LTA201 bta80 bta81 bta40 circuit bta42
Contextual Info: IDT79S145 Evaluation Board Manual Version 1.1 October 1999 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 1999 Integrated Device Technology, Inc. Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance

Contextual Info: IBM13Q4739CC 4M x 72 Buffered SDRAM Module Features • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* -10 ! Units ! fcK I Clock Frequency 66 ! MHz jtcK2 j Clock Cycle