CHARACTERISTIC OF MESFET Search Results

Mimix Broadband

Abstract: Characteristic of mesfet GaAs MESFET CF005 MESFET
Contextual Info: Broadband Power GaAs MESFET Chips August 2006 - Rev 03-Aug-06 CF005 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

4600

Abstract: MESFET CF015-11
Contextual Info: Broadband Power GaAs MESFET Chip August 2006 - Rev 03-Aug-06 CF015-11 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 1 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

CF010

Abstract: GaAs MESFET MIMIX BROADBAND
Contextual Info: Broadband Power GaAs MESFET Chips August 2006 - Rev 03-Aug-06 CF010 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

pseudomorphic HEMT

Abstract: CF004
Contextual Info: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

pseudomorphic

Abstract: HEMT CF001 MESFET
Contextual Info: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF001 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

CF003

Abstract: hemt
Contextual Info: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF003 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

GC122

Abstract: DC TO 18GHZ RF AMPLIFIER MMIC mmic distributed amplifier RAYTHEON RMM2080 high power fet amplifier schematic wideband automatic gain control S11510 dual-gate
Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating

RAYTHEON

Abstract: an 7073 Raytheon Company RMM2080 dual-gate GC122
Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating

dual-gate

Abstract: GC122
Contextual Info: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor's RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9811T1 The RF Small Signal Line G allium Arsenide N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical ap p lic atio n s are ce llu la r radio s and personal com m unication

CFA0301-A

Abstract: CF003-01 CFB0301-B CFB0301
Contextual Info: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon

CF001-01

Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Contextual Info: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9811T1 The RF Small Signal Line Gallium Arsenide N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical applications are cellular radios and personal communication

GaAs FET operating junction temperature

Abstract: TRANSISTOR 318a mesfet datasheet by motorola MRF9811T1
Contextual Info: MOTOROLA Order this document by MRF9811T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide MRF9811T1 N–Channel Depletion–Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz.

16pin 502

Contextual Info: Raytheon Electronics iliSS ìww% MHz G aAs MMIC Driver Amplifier Description The Raytheon RMDA0900-41 is a monolithic driver amplifier for use in CDMA digital systems or analog cellular systems. The circuit uses a 0.5 GaAs Enhancement/ Depletion MESFET low noise process. This process

mc331694

Abstract: mrf 510 MRF MOSFET GaAs FET operating junction temperature mesfet datasheet by motorola motorola mrf DCS1800 MC33169 MMBD701 MMSF4N01HD
Contextual Info: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs

MRF9820T1

Abstract: 16 SOT-143 MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF9820T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line GaAs MESFET AGC Amplifier MRF9820T1 The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device

sumitomo crm epoxy 1061

Abstract: crm-1061 sumitomo crm epoxy sumitomo crm 1061 sumitomo crm specification L444 NLG2131 AS21 sumitomo epoxy crm CRM1061
Contextual Info: NEL MARCH 2 7 , 1995 NLG2131 ULTRA-WIDEBAND AMPLIFIER The NLG2131 is a GaAs MESFET IC that performs signal amplification over the wide frequency range extending from lOOKHz to 8GHz. This IC is applicable to 10 Gb/s optical fiber communication sy stem s. The NLG2131 is fabricated using the 0.15 ¿¿m gate length A-SAINT Advanced Self-A ligned

mc331694

Contextual Info: Order this document by MC33169/D MOTOROLA M C 33169 GaAs Power A m plifier Support 1C The MC33169 is a support IC for GaAs Power Am plifier Enhanced FETs used in hand-held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a

Contextual Info: MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Amplifier Support 1C The MC33169 is a support IC lo r G aAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs

Contextual Info: Low Noise Amplifier Die 11.0 – 16.0 GHz ITT3502D ADVANCED INFORMATION Features • • • • • CW or Pulsed Operation 2.5 dB Typical Noise Figure 10.5 dB Typical Gain 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description The ITT3502D is a two stage, single ended

ITT8507D

Contextual Info: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

Contextual Info: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION Features • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process

mc331694

Abstract: mesfet datasheet by motorola DCS1800 MC33169 MMBD701 MMSF4N01HD MRFIC0913 MRF transistor
Contextual Info: Order this document by MC33169/D MC33169 GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a