CHANNEL MOSFET Search Results
CHANNEL MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TK5R1A08QM |
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MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet | ||
| TK155E65Z |
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N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ | Datasheet | ||
| TK155U65Z |
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MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL | Datasheet | ||
| TK6R9P08QM |
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MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK | Datasheet | ||
| XPW4R10ANB |
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N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L | Datasheet |
CHANNEL MOSFET Price and Stock
ROHM Semiconductor RUE002N02TLMOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RUE002N02TL | Reel | 177,000 | 3,000 |
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ROHM Semiconductor RV1C002UNT2CLMOSFETs Nch Small Signal MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RV1C002UNT2CL | Reel | 88,000 | 8,000 |
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ROHM Semiconductor RTR020N05TLMOSFETs SINGLE N-CHAN 45V 2A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RTR020N05TL | Reel | 66,000 | 3,000 |
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ROHM Semiconductor RYM002N05T2CLMOSFETs .9V DRIVE N-Ch MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RYM002N05T2CL | Reel | 32,000 | 8,000 |
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ROHM Semiconductor RHP020N06T100MOSFETs N-CH 60V 200MA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RHP020N06T100 | Reel | 12,000 | 1,000 |
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CHANNEL MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance |
OCR Scan |
-200V TC2320TG TC2320 TC2320TG | |
si3529
Abstract: Si3529DV SI3529DV-T1-E3
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Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3 | |
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Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested |
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SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V |
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Si4503DY S-20894--Rev. 17-Jun-02 | |
marking code CT
Abstract: "MARKING CODE CT" SOT-963
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CMRDM3575 OT-963 200mA 25-February marking code CT "MARKING CODE CT" SOT-963 | |
Si4310BDYContextual Info: Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14 |
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Si4310BDY SO-14 08-Apr-05 | |
p channel de mosfet
Abstract: list of P channel power mosfet Si4567DY si4567
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Si4567DY Si4567DY-T1--E3 08-Apr-05 p channel de mosfet list of P channel power mosfet si4567 | |
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Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s |
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FDD8424H | |
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Contextual Info: Si4814DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V |
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Si4814DY S-31421â 07-Jul-03 | |
FDS8858CZ
Abstract: fds8858
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FDS8858CZ FDS8858CZ fds8858 | |
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Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's |
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FDS8958B FDS8958B | |
FDS8858Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s |
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FDS8858CZ FDS8858 | |
CH21212Contextual Info: Si4814BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 ID (A)a rDS(on) (W) 0.018 @ VGS = 10 V 10 0.023 @ VGS = 4.5 V 8.5 0.018 @ VGS = 10 V 10.5 |
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Si4814BDY S-50342--Rev. 28-Feb-05 CH21212 | |
Transistor Mosfet N-Ch 30V
Abstract: STS7C4F30L
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STS7C4F30L STS7C4F30L Transistor Mosfet N-Ch 30V | |
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FDMQ8203Contextual Info: FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in |
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FDMQ8203 FDMQ8203 | |
MOSFET P-channel SOT-23
Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
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CMPDM3590 CMPDM7590 CMPDM3590 OT-23 CMPDM3590: CMPDM7590: 200mA MOSFET P-channel SOT-23 Power MOSFET N-Channel sot-23 C759 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET | |
STS7C4F30L
Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
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STS7C4F30L STS7C4F30L P Channel STripFET Transistor Mosfet N-Ch 30V | |
FDD8424Contextual Info: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s |
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FDD8424H FDD8424 | |
S-49534
Abstract: Si4539DY
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Si4539DY S-49534--Rev. 06-Oct-97 S-49534 | |
marking code R
Abstract: MARKING CODE W
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CMBDM3590 CMBDM7590 CMBDM3590: CMBDM7590: OT-923 200mA CMBDM7590 marking code R MARKING CODE W | |
CMUDM7590
Abstract: on semiconductor marking code sot CMUDM3590
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CMUDM3590 CMUDM7590 CMUDM3590 OT-523 CMUDM3590: CMUDM7590: 200mA CMUDM7590 on semiconductor marking code sot | |
CMSDM7590
Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
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CMSDM3590 CMSDM7590 CMSDM3590 OT-323 CMSDM3590: CMSDM7590: 200mA marking CODE 75C Complementary MOSFETs logic level complementary MOSFET | |
MOSFET N-CH 200V
Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
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STS1C1S250 STS1C1S250 MOSFET N-CH 200V MOSFET P-CH 250V 5A sd 150 zener diode | |
FDML7610SContextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A |
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FDML7610S FDML7610S | |