CHA21 Search Results

CHA2193

Contextual Info: CHA2193 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and

Contextual Info: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHA2194

Contextual Info: CHA2194 36-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 38 GHz to 44 GHz point to point and point to multipoints communication . The circuit is manufactured with a standard

Contextual Info: u n ite d m o n o lith ic sem ico n d u cto rs CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to

CHA2194

Abstract: VG-12
Contextual Info: CHA2194 RoHS COMPLIANT 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

Contextual Info: CHA2193 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the

Contextual Info: CHA2110-98F 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two-stages wide band low noise amplifier circuit. It is self-biased. It is designed for military, space and telecommunication systems. VD1 VD2 The circuit is manufactured with a pHEMT

ESD 141

Contextual Info: CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA2192

Contextual Info: CHA2192 24-26.5GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps

CHA2193

Contextual Info: CHA2193 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the

CHA2190

Abstract: PS11 PS12 PS22 DBS11
Contextual Info: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHA2159

Contextual Info: CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

5.1 amplifier schematic

Abstract: CHA2194
Contextual Info: CHA2194 RoHS COMPLIANT 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

CHA2159

Contextual Info: CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA2193

Contextual Info: CHA2193 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps

CHA2194

Contextual Info: CHA2194 36-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 38 GHz to 44 GHz point to point and point to multipoints communication . The circuit is manufactured with a standard

CHA2190-99F/00

Abstract: CHA2190 PS11 PS12 PS22 self 16071
Contextual Info: CHA2190 RoHS COMPLIANT 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes

Contextual Info: CHA2194 RoHS COMPLIANT 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

Contextual Info: u n it e d m onolithic sem ico n du ctors . « « «« o u a oh no CH A2193 » w o e ° 9V 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave 1C Description Vd The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of

internal circuit of ic 7486

Abstract: CHA2190-99F/00 hemt biasing CHA2190 PS11 PS12 PS22
Contextual Info: CHA2190 20-30GHz Low Noise Amplifier self biased GaAs Monolithic Microwave IC Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

CHA2194

Contextual Info: CHA2194 36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication .

60Ghz

Abstract: CHA2157
Contextual Info: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

60Ghz

Abstract: CHA2157
Contextual Info: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Contextual Info: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.