CHA20 Search Results

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

"High Gain Buffer Amplifier"

Contextual Info: CHA2098a 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Vd1 Description The CHA2098a is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 993 99f
Contextual Info: CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

AN0010

Abstract: AN0017 CHA2069-QDG MO-220 RO4003 ro4003 rogers microstrip
Contextual Info: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.

A2069

Abstract: AN0017 CHA2069-QDG MO-220
Contextual Info: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.

SAS 251

Abstract: A 473 G
Contextual Info: CHA2098b RoHS COMPLIANT 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial

CHA2069-99F/00

Abstract: CHA2069
Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

nov 86 nf 00

Contextual Info: CHA2094b RoHS COMPLIANT 36-40GHz Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

MAR105

Abstract: CHA2066 MS11 MS12 MS21 MS22 PS11 PS12 PS22 RF 3826
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA2094b RoHS COMPLIANT 36-40GHz Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description Vds Vds The CHA2094 is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA2098B

Contextual Info: CHA2098b RoHS COMPLIANT 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial

transistor on 4436

Abstract: c 4977 transistor
Contextual Info: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT

CHA2066

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
Contextual Info: CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

Contextual Info: CHA2093 RoHS COMPLIANT 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 2 Vg 1 It is supplied in chip form. Gain dB Main Features 1 Broad band performance 20-30GHz

Contextual Info: CHA2098b RoHS COMPLIANT 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2098b is a high gain broadband threestage monolithic buffer amplifier. It is designed for a wide range of applications, from military to commercial

Contextual Info: u n ite d monolithic semiconductors « « «« ru A o n n o » C HA 20983 » w o e « 9 »® < S > ® 20-40GHz High Gain Buffer Amplifier GaAs Monolithic Microwave 1C Description Vd1 V d2,3 The CHA2098a is a high gain broadband threestage monolithic buffer amplifier. It is designed

Contextual Info: u n ite d monol i t hi c semiconductors * „ »A " « : * onco« C HA 20633 w.-.-.- 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description 4 The CHA2063a is a two-stage wide band monolithic low noise amplifier. u.m.s. The circuit is manufactured with a

Contextual Info: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication

4093 bd

Abstract: AN0017 CHA2066-QAG MO-220 PS11 PS12 PS22 RO4003 PCB Rogers RO4003 7649 qfn
Contextual Info: CHA2066-QAG RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multi-point, VSAT to

Contextual Info: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

c 4977 transistor

Contextual Info: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT

20-28GHz

Contextual Info: CHA2092a 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

CHA2069

Contextual Info: CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

bd 222 smd

Abstract: 151 schematic for 88 to 108 amplifier AN0017 CHA2066-QAG MO-220 PS11 PS12 PS22 RO4003
Contextual Info: CHA2066-QAG RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multi-point, VSAT to