CH725 Search Results

T0T7250

Abstract: FS1N
Contextual Info: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz

74HC Logic Package Information

Abstract: MS-012AA 5V88
Contextual Info: Philips Semiconductors Objective specification Programmable ripple counter with oscillator; 3-State 74HC/HCT9323A FEATURES DESCRIPTION • 8-pin space saving package The 74HC/HCT9323A are high-speed Si-gate CMOS devices. They are specified in compliance with JEDEC standard no. 7A.

AD2033

Contextual Info: PHOTO RELAY TLP795G TLP795G TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP795G consists of a n a lum inum gallium arsenide infrared em ittin g diode optically coupled to a photo-MOS FE T in a six lead plastic DIP package.

P161j

Contextual Info: TLP161J GaAs IRED & PHOTO-TRIAC TIP161J TRIAC DRIVE U n it in m m PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY T he TOSHIBA M INI FLAT COUPLER T L P161J is a sm all outline coupler, suitable for surface m ount assem bly. The T LP161J consists of a photo triac, optically coupled to a gallium

Contextual Info: TOSHIBA TLRD262 LED Lamp Unit in mm GaAIAs Red Light Emission Panel Circuit Indicator p Z J j± a 2 Tl rb 3mm Diameter T1-3/4 • G aA IA s Red L E D • All Plastic Mold Type • Colorless Transparent Lens • Low Drive Current, High Intensity Red Light Em ission

Contextual Info: YoSHÎBÂTCDÎSCRETE/0PT0ï 9097250 TOSHIBA » F | ci m ? E S D <DISCRETE/OPTO ' 5 6 C 07 7T 5 0D0773S " 0 yC 5 3 3-/3 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICATIONS.

2SK1913

Abstract: transister 2SK191
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F eatures • Low Drain-Source ON Resistance ' r d s (ON) = 0.9Q (Typ.) • High Forward Transfer Admittance

Contextual Info: TIM1414-15 FEATURES : • H IG H PO W ER ■ B R O A D B A ND IN TERNA LLY M A T C H E D ■ H ER M ETIC A LLY SEALED PACKAGE P1dB = 42.0 dBm at 14.0 G H z to 14.5 GHz ■ H IG H G AIN G 1dB = 6.0 dB at 14.0 G H z to 14.5 G Hz RF PERFORMANCE SPECIFICATIONS Ta = 25°C